National Key Laboratory Of Asichebei Semiconductor Research Instituteshijiazhuang050051Pr China

China

National Key Laboratory Of Asichebei Semiconductor Research Instituteshijiazhuang050051Pr China

China
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Wang S.,National Key Laboratory Of Asichebei Semiconductor Research Instituteshijiazhuang050051Pr China | Sun N.,National Key Laboratory Of Asichebei Semiconductor Research Instituteshijiazhuang050051Pr China | Gao L.,National Key Laboratory Of Asichebei Semiconductor Research Instituteshijiazhuang050051Pr China | Liu X.,National Key Laboratory Of Asichebei Semiconductor Research Instituteshijiazhuang050051Pr China | And 7 more authors.
Physica Status Solidi (B) Basic Research | Year: 2016

In this paper, indium (In)-rich second-phase particles are observed in InP crystals, which is induced by the loss of phosphorus (P) during polycrystalline melting. Their characterizations reveal that the size of these In-rich particles is 200nm-20μm. The dislocation structure surrounding the second-phase particle and its formation is explained by the model of prismatic dislocation loop. The indium-rich second-phase particles could be eliminated under P-rich condition by a rapid in situ P injection before crystal growth. Excessive P injection will lead to the formation of P pores with internal P deposits. The optimal injection value is given to eliminate the defects. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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