Shijiazhuang, China
Shijiazhuang, China

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Wang J.,National Key Laboratory of ASIC | Yang D.,China Electronics Technology Group Corporation | Xing D.,National Key Laboratory of ASIC | Liang S.,National Key Laboratory of ASIC | And 3 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2017

An 0.2 THz brodband unbalanced doubler multiplier was designed and realized based on four anodes in anti-series GaAs planar Schottky diodes. The Schottky diode was flip-chiped on the 75 μm thick quartz. The circuit output power and efficiency was measured under the condition of small and large input power. The measured efficiency was bigger than 3% over the band of 210 GHz to 224 GHz with the input power between 10 mW to 15 mW under the condition of forward bias voltage. The peak efficiency is 7.8% at the frequency of 212 GHz. The measured efficiency was bigger than 3.6% over the band of 210 GHz to 224 GHz with the input power between 48 mW to 88 mW under the condition of self-biased. The peak efficiency is 5.7% at the frequency of 214 GHz. The biggest output power is 5.7 mW and 7.5 mW at the fixed frequency of 212 GHz when the input power is 132 mW under the condition of self-biased and reverse bias voltage of-0.8 V separately. © 2017, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.


Deng X.,University of Electronic Science and Technology of China | Wen Y.,University of Electronic Science and Technology of China | Wang X.,University of Electronic Science and Technology of China | Wang Y.,National Key Laboratory of ASIC | And 3 more authors.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 | Year: 2014

An optimized linearly graded field limiting ring (LG-FLR) termination structure for high voltage power 4H-SiC diodes has been presented in this paper. Simulated optimized designs were performed to investigate SiC field limiting ring termination, and determine the optimum guard ring spacing for planar diodes. Simulated results show that the LG-FLR provides a smooth and uniform surface electric field distribution without field spikes. In addition, LG-FLR consumes smaller termination length than conventional FLR structures. Implanted 4H-SiC JBS diodes with optimized guard ring designs were fabricated and results correlated to simulation. Experimental breakdown values of 5 kV for LG-FLR structure with 35 rings were in good agreement with simulated results. © 2014 IEEE.


Wan X.-J.,CAS Institute of Semiconductors | Wang X.-L.,CAS Institute of Semiconductors | Wang X.-L.,ISCAS XJTU Joint Laboratory of Functional Materials and Devices for Informatics | Wang X.-L.,Xi'an Jiaotong University | And 9 more authors.
Chinese Physics Letters | Year: 2013

The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 ± 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ∼0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment. © 2013 Chinese Physical Society and IOP Publishing Ltd.


Wang X.-D.,University of Electronic Science and Technology of China | Deng X.-C.,University of Electronic Science and Technology of China | Wang Y.-W.,National Key Laboratory of ASIC | Wang Y.,National Key Laboratory of ASIC | And 2 more authors.
Chinese Physics B | Year: 2014

This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm 2 (about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length. © 2014 Chinese Physical Society and IOP Publishing Ltd.


Deng X.-C.,University of Electronic Science and Technology of China | Fei Y.,National Key Laboratory of ASIC | Sun H.,University of Electronic Science and Technology of China | Rao C.-Y.,University of Electronic Science and Technology of China | And 3 more authors.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2012

An etched implanted junction termination extension (JTE) is presented for high-voltage 4H-SiC JBS rectifiers. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. Experimental and simulation results show that the JBS rectifier with etched JTE can improve the blocking performance compared to a conventional JTE structure and decrease the sensitivity of any possible variation in processing condition. The fabricated SiC JBS rectifier showed the forward on-state voltage characteristic is 1.3V at room temperature and the blocking voltage of 1.2kV. © 2012 IEEE.


Deng X.C.,University of Electronic Science and Technology of China | Li L.,National Key Laboratory of ASIC | Zhang B.,University of Electronic Science and Technology of China | Mo J.H.,National Key Laboratory of ASIC | And 3 more authors.
Electronics Letters | Year: 2011

Silicon carbide (SiC) MESFETs were fabricated by using a standard SiC MESFET structure with the application of the multi-recessed gate in the process. The multi-recessed gate structure is effective in increasing the output power density, due to higher breakdown voltage. A 250m gate periphery SiC MESFET biased at a drain voltage of 65V demonstrated a pulsed wave saturated output power of 2.24W with a linear gain of 8dB at 2GHz. RF power output greater than 8.9W/mm was achieved, showing the potential of these devices for high-power operation. © 2011 The Institution of Engineering and Technology.


Wang X.,Hebei University of Technology | Wang X.,National Key Laboratory of ASIC | Wang Y.,National Key Laboratory of ASIC | Fang Y.,National Key Laboratory of ASIC | And 3 more authors.
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | Year: 2014

The 2-dimensional electron gas (2DEG) in N-polar GaN based high electron mobility transistor (HEMT) with AIN interlayer and new graded Al-con tent, was modeled and simulated by self-consistently solving Schrfidinger and Poisson equations. The impact of the Al-depth profile in the AlGaN back barrier of N-polar HEMT on the bulk carrier-concentration and 2DEG sheet density was investigated. Here, the thickness-ratio of the Al-content decreased layer and Al-content increased layer and the maximum ratio were defined as R and Xmax, respectively. The calculated results show that the Al-graded AIN interlayer synthesized with the optimized Al-depth profile increase the peak concentration of the bulk carrier of the N-polar HEMT by 12%. As R increases, the 2DEG sheet density sharply decreases, and it slowly reaches saturation after Xmax rises up to over 0.4


Wu Y.-B.,Hebei University of Technology | Wu Y.-B.,National Key Laboratory of ASIC | Yang R.-X.,Hebei University of Technology | Yang K.-W.,National Key Laboratory of ASIC | And 5 more authors.
Guangdianzi Jiguang/Journal of Optoelectronics Laser | Year: 2011

Resonant tunneling transmission coefficient Full width at half-maximum (FWHM) curves of GaAs/AlAs/In0.1Ga0.9As material system were computed and used for the design of resonant tunneling diode (RTD). Several RTD epilayer structures were presented based on the computed results and these structures were grown by molecular beam epitaxy (MBE) method. The characteristics of the structures were examined by X-ray diffraction. It is shown that the layer thichnesses of the structures are exactly identical to the design data, and the interfaces are also very flat. RTD devices were fabricated with the grown material structures, and the I-V features were characterized. The measurement results demonstrate that the peak-to-valley current ratio reaches 8.25 with peak current density of 112 kA/cm2.


Wei H.,Hebei Semiconductor Research Institute | Wei H.,National Key Laboratory of ASIC | Gao X.,Hebei Semiconductor Research Institute | Wu H.,Hebei Semiconductor Research Institute | And 2 more authors.
2012 International Conference on Computational Problem-Solving, ICCP 2012 | Year: 2012

The design, fabrication, and experimental characteristics of GaAs PIN diodes are presented for W band monolithic integrated switches. The diodes with 20m m-diameter were used and showed a turn on voltage of 1.32 V, and a switching cutoff frequency of 4.0 THz. The monolithic integrated switches employed microstrip transmission lines and backside via holes for low-inductance signal grounding. A radial stub-based design was used for on-chip biasing, and the high-frequency characteristics of the switches were verified by on-wafer W-band testing. The SPST PEN monolithic switch demonstrated a low minimum insertion loss of 1.1 dB at 92 GHz and 30 dB isolation, 1.8 dB insertion loss in the frequency band from 85 GHz to 95 GHz. © 2012 IEEE.


Wang J.,National Key Laboratory of ASIC | Yang D.,China Electronics Technology Group Corporation | Xing D.,National Key Laboratory of ASIC | Liang S.,National Key Laboratory of ASIC | And 3 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2016

An equivalent circuit model of mixing Schottky diode with cut-off frequency of 5 THz was reported based on DC measurement and 3-D electromagnetic (EM)simulation combined of EM simulator and circuit simulator. The model of nonlinear Schottky junction and 3-D periphery structure full-wave simulation model was researched carefully, the four-ports model considered real circuit topology was established. The equivalent circuit model can be used for design of mixers worked at the lower end of terahertz band, the methodology of this diode model was a reference of much more higher terahertz frequency. A sub-harmonic 220 GHz wideband mixer was designed based on the model, the double sideband conversion loss was less than 10 dB in the range of 192 GHz to 230 GHz, the measured result was well with the simulated result. © 2016, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.

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