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Yang Z.,China Electronics Technology Group Corporation | Leng J.,China Electronics Technology Group Corporation | Mei Y.,National Key Laboratory of Analog Integrated Circuits | Huang L.,National Key Laboratory of Analog Integrated Circuits | And 2 more authors.
Yadian Yu Shengguang/Piezoelectrics and Acoustooptics | Year: 2011

The effects of IPA and ultrasonic agitation in KOH and TMAH solutions on the etch rate and surface roughness of (100) Si shallow trends were analyzed experimentally. The results showed that IPA additive which was used in TMAH solution slowed down the etch rate of Si obviously. But in KOH solution, IPA did not significantly affect the etch rate. Adding IPA to the solution with higher KOH concentration made the surface roughness of Si worse. Otherwise, IPA additive in TMAH solution improved the surface roughness of Si. The use of ultrasonic agitation in the two solutions mentioned above increased the etch rate and improved the surface roughness of Si. But in the solution of higher KOH concentration with IPA additive, the ultrasonic agitation didn't improve the surface roughness of Si. Additionally, the ultrasonic agitation weakened the size effect of micro-trend etching. Comparing with KOH solution, TMAH solution was preferable in silicon anisotropic etching. Source


Ao K.,University of Electronic Science and Technology of China | He Y.,University of Electronic Science and Technology of China | Li L.,National Key Laboratory of Analog Integrated Circuits | Wang Y.,National Key Laboratory of Analog Integrated Circuits | Li Q.,University of Electronic Science and Technology of China
Proceedings of the 14th International Symposium on Integrated Circuits, ISIC 2014 | Year: 2015

A 14-b 100-MS/s pipeline analog-to-digital converter (ADC) is presented. The ADC uses six 4-b stages with 2-b interstage redundancy to relax the requirements of Sub-ADC nonlinearity and interstage offset. The ADC, implemented in a 0.18-μm CMOS process, achieves 70.3-dB signal-to-noise and distortion ratio (SNDR), 83.7-dB spurious free dynamic range (SFDR) and 11.3 effective number of bit (ENOB) with 30-MHz input at full 100-MHz sampling rate. The ADC dissipates 342mW from 3.3-V supply. © 2014 IEEE. Source


Yuzhan Z.,CAS Xinjiang Technical Institute of Physics and Chemistry | Yuzhan Z.,University of Chinese Academy of Sciences | Wu L.,CAS Xinjiang Technical Institute of Physics and Chemistry | Diyuan R.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 4 more authors.
Journal of Semiconductors | Year: 2010

The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. © 2010 Chinese Institute of Electronics. Source


Wang Y.,University of Science and Technology of China | Wang Y.,National Key Laboratory of Analog Integrated Circuits | Xu S.,National Key Laboratory of Analog Integrated Circuits | Xu S.,China Electronics Technology Group Corporation | And 4 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2010

A monolithic detection circuit for capacitive MEMS accelerometers was developed. Instead of using closed-loop techniques, this system employed open-loop detection. When supply voltages was 5 V, power consumption was 9 mW, noise magnitude was lower than 200 μV(12.6 mg), sensitivity was 15.8 mV/g 1.8%, test range was+/-100 g. Source

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