Entity

Time filter

Source Type


Fei W.-X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Fei W.-X.,Xinjiang Key Laboratory of Electronic Information Material and Device | Fei W.-X.,University of Chinese Academy of Sciences | Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 26 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2010

With different radiation methods, ionizing radiation response of NPN bipolar transistors of six different processes was investigated. The results show that the enhanced low dose rate sensitivity obviously exists in NPN bipolar transistors of the six kinds of processes. According to the experiment, the damage of decreasing temperature in step during irradiation is obviously greater than the result of irradiated at high dose rate. This irradiation method can perfectly simulate and conservatively evaluate low dose rate damage, which is of great significance to radiation effects research of bipolar devices. Finally, the mechanisms of the experimental phenomena were analyzed. Source


Xi S.-B.,CAS Xinjiang Technical Institute of Physics and Chemistry | Xi S.-B.,Xinjiang Key Laboratory of Electronic Information Materials and Devices | Xi S.-B.,University of Chinese Academy of Sciences | Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 18 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2010

60Co γ radiation effects and annealing behaviors of domestic NPN bipolar junction transistors with the same process technology but different base doping concentrations were investigated. It is shown that transistors with different base doping concentrations make the different responses of high and low dose rate radiation. More degradation can be seen in the lightly-doped base PNP transistors than the heavily-doped base PNP transistors. Source


Fei W.-X.,CAS Xinjiang Technical Institute of Physics and Chemistry | Fei W.-X.,Xinjiang Key Laboratory of Electronic Information Material and Device | Fei W.-X.,University of Chinese Academy of Sciences | Lu W.,CAS Xinjiang Technical Institute of Physics and Chemistry | And 26 more authors.
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2011

At various dose rates, ionizing radiation response of NPN bipolar transistors at three kinds of base-emitter junction biases was investigated. The results show that the radiation damages are most significant at base-emitter junction reverse bias and minimal at forward bias when irradiated at high or low dose rate. Furthermore, the radiation damage is more severe at low dose rate for the same bias, i.e. enhanced low dose rate sensitivity (ELDRS). The influence of base-emitter junction bias on ELDRS effect is obvious. The ELDRS effect is most significant for base-emitter junction forward bias, while it is least for reverse bias. The mechanisms of these results were discussed. Source


Xi S.,CAS Xinjiang Technical Institute of Physics and Chemistry | Xi S.,Xinjiang Key Laboratory of Electronic Information Materials and Devices | Xi S.,University of Chinese Academy of Sciences | Wang Z.,National Key Laboratory of Analog Integrated Circuit | And 18 more authors.
He Jishu/Nuclear Techniques | Year: 2011

In this paper, we investigate 60Co γ-ray irradiation effects and annealing behaviors of NPN bipolar junction transistors of the same manufacturing technology but different doping concentrations. The transistors of different doping concentrations differ in responses of the radiation effect. More degradation was observed with the transistors of low concentration-doped NPN transistors than the high concentration-doped NPN transistors. The results also demonstrate that reverse-biased transistors are more sensitive to radiation than the forward-biased ones. Mechanisms of the radiation responses are analyzed. Source

Discover hidden collaborations