Fijal-Kirejczyk I.M.,National Center for Nuclear Research andrzeja Soltana |
Milczarek J.J.,National Center for Nuclear Research andrzeja Soltana |
Radebe M.J.,Radiation Science |
de Beer F.C.,Radiation Science |
And 2 more authors.
Drying Technology | Year: 2013
The application of modern digital neutron radiography in the study of the drying process in porous media is demonstrated with two simple examples of cylindrical and rectangular samples made of different materials. The statistical method of image analysis is presented and the standard deviation of grey scale values (referred to brightness) is shown to be a useful measure of receding drying front emergence. The motion of the drying front was analyzed and found neither linear nor proportional to the square root of time and was delineated with nonlinear functions different for each sample shape. © 2013 Copyright Taylor and Francis Group, LLC.
Nowakowska-Langier K.,National Center for Nuclear Research andrzeja Soltana |
Chodun R.,Warsaw University of Technology |
Zdunek K.,Warsaw University of Technology |
Minikayev R.,Polish Academy of Sciences |
Nietubyc R.,National Center for Nuclear Research andrzeja Soltana
Materials Science- Poland | Year: 2015
AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite) structure in which the crystallographic orientation depends on the gas mixture pressure. © 2015 Wroclaw University of Technology.