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Baek R.-H.,Pohang University of Science and Technology | Baek C.-K.,Korea Institute for Advanced Study KIAS | Jung S.-W.,National Center for Nanomaterials and Technology | Yeoh Y.Y.,Samsung | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2010

The series resistance Rsd and the electron and hole mobilities, extracted from n- and p-type Si-nanowire field effect transitors (Si-NWFETs) using the Y-function technique are compared. Both n- and p-NWFETs show similar Rsd values but n-NWFETs have larger Rsd variation from device to device than p-NWFETs. Also, compared with n-NWFETs, p-NWFETs exhibit higher low-field mobility μ0 but severe mobility degradation, regardless of channel length in the high gate voltage Vgs region. With decreasing channel length and increasing lateral electric field for a given drain voltage, n-NWFETs exhibit low-field mobility (μ0) degradation resulting from the velocity saturation. In contrast, the hole mobility in p-NWFETs remains nearly constant and is consistant with its larger critical electric field, Ec. © 2010 The Japan Society of Applied Physics. Source


Baek R.-H.,Pohang University of Science and Technology | Baek C.-K.,Korea Institute for Advanced Study KIAS | Jung S.-W.,National Center for Nanomaterials and Technology | Yeoh Y.Y.,Samsung | And 4 more authors.
IEEE Transactions on Nanotechnology | Year: 2010

The series resistance, Rsd in silicon nanowire FETs (Si-NWFET) is extracted unambiguously, using the Y-function technique, in conjunction with the drain current and transconductance data. The volume channel inversion in Si-NWFET renders the charge carriers relatively free of the surface scattering and concomitant degradation of mobility. As a result, the Y-function of Si-NWFET is shown to exhibit a linear behavior in strong inversion, thereby enabling accurate extraction of Rsd. The technique is applied to nanowire devices with channel lengths 82, 86, 96, 106, 132, and 164 nm, respectively. The extracted Rsd values are shown nearly flat with respect to the gate voltage, as expected from Ohmic contacts but showed a large variation for all channel lengths examined. This indicates the process parameters involved in the formation of series contacts vary considerably from device to device. The present method only requires a single device for extraction of Rsd and the iteration procedure for data fitting is fast and stable. © 2009 IEEE. Source


Baek R.-H.,Pohang University of Science and Technology | Baek C.-K.,Korea Institute for Advanced Study | Choi H.-S.,Pohang University of Science and Technology | Lee J.-S.,Pohang University of Science and Technology | And 8 more authors.
IEEE Transactions on Nanotechnology | Year: 2011

In this paper, the volume trap densities Nt are extracted from gate-all-around silicone-nanowire FETs with different gate oxides, using a cylindrical-coordinate-based flicker noise model developed. For extracting Nt, the drain-current power spectral densities were measured from a large number of identical devices and averaged over, thereby mimicking the spatial distribution of trap sites inducing 1/f curve. Also, effective mobility and threshold voltage were simultaneously extracted with the series resistance to characterize the 1/f noise in terms of intrinsic values of these two channel parameters. The volume trap densities thus extracted from different oxides (in situ steam-generated oxide/rapid thermal oxide/nitride-gated oxide) are compared and further examined using hot-carrier stress data. Finally, radius dependence of the cylindrical 1/f model developed is discussed. © 2010 IEEE. Source

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