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Hsinchu, Taiwan

National | Date: 2010-11-02

The present invention includes influenza Hemagglutinin protein fragments that fold properly when expressed in bacteria.

Wang S.-Y.,National | Chen F.-C.,National
Microwave and Optical Technology Letters | Year: 2014

Mushroom structure exhibits unique electromagnetic properties that have led to a wide range of applications in the microwave and antenna community. This article concentrates on the electromagnetic band-gap characteristic of the mushroom structure with the suspending microstrip line, and a new concept of the mushroom interlaced periodic arrayal is proposed. Furthermore, we utilize the new concept to design a triband bandstop filter and a triplexer. The triplexer can integrate three kinds of communication systems with each other, which operate at frequencies including GSM 1800 MHz, WiFi 2.45 GHz, and WiMAX 3.5 GHz, respectively. Therefore, the novel triplexer would be good potential candidate not only for nowadays but also for future applications in communication systems. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2789-2795, 2014 Copyright © 2014 Wiley Periodicals, Inc.

Chung Y.-T.,National Chiao Tung University | Huang T.-I.,National Chiao Tung University | Li C.-W.,National Chiao Tung University | Chou Y.-L.,National | And 9 more authors.
IEEE Transactions on Electron Devices | Year: 2012

A V t retention distribution tail in a multitime-program (MTP) silicon-oxide-nitride-oxide-silicon (SONOS) memory is investigated. We characterize a single-program-charge-loss-induced $\Delta V t in nor-type SONOS multilevel cells (MLCs). Our measurement shows the following: 1) A single-charge-loss-induced $\Delta V t exhibits an exponential distribution in magnitudes, which is attributed to a random-program-charge-induced current-path percolation effect, and 2) the standard deviation of the exponential distribution depends on the program-charge density and increases with a program V t level in an MLC SONOS. In addition, we measure a V t retention distribution in a 512-Mb MTP SONOS memory and observe a significant V t retention tail. A numerical V t retention distribution model including the percolation effect and a Poisson-distribution-based multiple-charge-loss model is developed. Our model agrees with the measured V t retention distribution in a 512-Mb SONOS well. The observed V t tail is realized mainly due to the percolation effect. © 2012 IEEE.

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