Nanya Technology Corporation | Date: 2016-06-30
The invention provides a method for fabricating a semiconductor device, including: forming a dummy gate on a substrate, forming an inter-layer dielectric layer (ILD) on the dummy gate and the substrate, forming a metal layer on the upper surface of the dummy gate, removing the dummy gate to form a trench in the inter-layer dielectric layer (ILD), conformally forming a gate dielectric layer in the trench, conformally forming a first conductive type metal layer on the gate dielectric layer, anisotropic etching the first conductive type metal layer and the gate dielectric layer over the metal layer to form a gap in the inter-layer dielectric layer (ILD), and filling a second conductive type metal layer in the gap.
Nanya Technology Corporation | Date: 2016-06-08
An etching process in a capacitor process for DRAM is described. A substrate is provided, which has thereon a silicon layer and metal electrodes in the silicon layer. The silicon layer is removed using a liquid etchant composition. The liquid etchant composition contains tetramethylammonium hydroxide (TMAH), an additive including hydroxylamine or a metal corrosion inhibitor, and water as a solvent.
Nanya Technology Corporation | Date: 2015-05-07
A circuit in dynamic random access memory devices includes a command extension circuit. The command extension circuit is configured to generate at least one multiple-cycle command signal by lengthening a single-cycle clock command signal from a command decoding circuit. Control logic extends and reduces the multiple-cycle command signal to provide additional functions such as burst length and burst chop. Additional control logic is configured to determine whether a clock signal is enabled in output control logic circuitry according to the multiple-cycle command and logic level generated in the output logic circuitry.
Nanya Technology Corporation | Date: 2015-06-23
A method for forming a pattern includes steps of forming a patterned core layer on a substrate, conformally forming a spacer layer on the patterned core layer to form first concave portions, performing an etch back process to expose the patterned core layer, removing the exposed patterned core layer to form second concave portions, filling up the first concave portions and the second concave portions with a directed self-assembly material, and activating a directed self-assembly process, so that the directed self-assembly material is diffused to the perimeter of the concave portions to form a hole surrounding by the directed self-assembly material in each concave portions.
Nanya Technology Corporation | Date: 2015-01-07
A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.
Nanya Technology Corporation | Date: 2016-06-27
The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof. The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.
Nanya Technology Corporation | Date: 2015-07-14
An electronic apparatus comprising a unified non-volatile memory and a control unit is disclosed. The unified non-volatile memory comprises a first memory section, served as a read only memory; and a second memory section, served as a random access memory. The control unit controls the unified non-volatile memory. The first memory section further comprises: a first area for the first memory section; and a second area for the first memory section. The control unit adjusts a refresh rate of the second memory section according to an amount of access times of the second memory section.
Nanya Technology Corporation | Date: 2015-02-09
A trench extends from a main surface of a semiconductor substrate to a predetermined depth. A gate oxide layer is formed in the trench. A buried gate electrode is formed at a lower portion of the trench. The buried gate electrode is capped with a dielectric layer. A pad layer and hard mask layer are formed on the semiconductor substrate. A recess through the pad layer and hard mask layer and into the semiconductor substrate is formed on one side of the trench. A portion of the dielectric layer is revealed within the recess. The hard mask layer is then removed. An ion implantation process is performed to implant dopants on both sides of the trench, thereby forming a source doping region and a drain doping region. The source doping region has a junction depth that is deeper than that of the drain doping region.
Nanya Technology Corporation | Date: 2015-09-21
A capacitor includes a substrate, a multilayer over the substrate, a plurality of container-shaped storage node structures on the semiconductor substrate and surrounded by the multilayer, the storage node structure has a sidewall extending upwardly from the base to the top, where the sidewall includes an upper segment and a lower segment thinner than the upper segment, a capacitor dielectric material along a surface of each storage node structure, and a capacitor electrode material over the capacitor dielectric material.
Nanya Technology Corporation | Date: 2016-04-29
A wire bonding method includes the following steps. First, a substrate including at least one metal finger is provided. Next, a first chip including at least one first boding pad is disposed on the substrate. Next, a metal ball bump is foamed on the corresponding metal finger. Next, a first wire is formed from the metal ball bump toward the corresponding first boding pad. Next, a first free air ball is formed on the first wire by electronic flame-off process. Then, the first free air ball connected to the first wire is pressed on the corresponding first boding pad, such that the first wire is located between the first free air ball and the corresponding first boding pad.