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Woburn, MASSACHUSETTS, United States

Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random access memory based on the position of carbon nanotubes deposited on a chip-like substrate. In theory, the small size of the nanotubes allows for very high density memories. Nantero also refers to it as NRAM. Wikipedia.

An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. This mixture can then be deposited over a substrate as a relatively thick composite article via a spin coating process. The composite article may possess improved switching properties over that of a nanotube-only switching article. A method for forming substantially uniform nanoscopic particles of carbon, which contains one or more allotropes of carbon, is also disclosed.

The present disclosure provides methods for removing defects nanotube application solutions and providing low defect, highly uniform nanotube fabrics. In one aspect, a degassing process is performed on a suspension of nanotubes to remove air bubbles present in the solution. In another aspect, a continuous flow centrifugation (CFC) process is used to remove small scale defects from the solution. In another aspect, a depth filter is used to remove large scale defects from the solution. According to the present disclosure, these three methods can be used alone or combined to realize a low defect nanotube application solutions and fabrics.

Nantero | Date: 2013-09-06

Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nanoscopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.

Methods for dynamically programming and dynamically reading one or more resistive change elements within a resistive change element array are disclosed. These methods include first pre-charging all of the array lines within a resistive change element array simultaneously and then grounding certain array lines while allowing other array lines to float in order to direct discharge currents through only selected cells. In this way, resistive change elements within resistive change element arrays made up of 1-R cellsthat is, cells without in situ selection circuitrycan be reliably and rapidly accessed and programmed.

Nantero | Date: 2013-09-20

The present disclosure provides scalable nanotube fabrics and methods for controlling or otherwise adjusting the nanotube length distribution of a nanotube application solution in order to realize scalable nanotube fabrics. In one aspect of the present disclosure, one or more filtering operations are used to remove relatively long nanotube elements from a nanotube solution until nanotube length distribution of the nanotube solution conforms to a preselected or desired nanotube length distribution profile. In another aspect of the present disclosure, a sono-chemical cutting process is used to break up relatively long nanotube elements within a nanotube application solution into relatively short nanotube elements to realize a pre-selected or desired nanotube length distribution profile.

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