Nanoplus Nanosystems and Technologies GmbH
Nanoplus Nanosystems and Technologies GmbH
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2011.3.5 | Award Amount: 3.63M | Year: 2011
The project CHARMING aims at developing compact and fully fibred visible lasers for fluorescencespectroscopy, high resolution confocal microscopy and tryptophan imaging. These applications requirepulsed operation (about 100 ps at repetition rates from 1 to 80 MHz), various wavelengths in the visible(from 515 to 630 nm typically) and in the UV (for tryptophan imaging), high average power (up to 500 mW for high resolution) with a polarisation maintaining fibre delivery when possible.These wavelengths cannot, in most of the cases, be addressed directly. Therefore, in order to respond tothese applications with fibre based solutions different technological building blocks have to be developed.The project CHARMING will focus on the development of semiconductor laser sources in the 1.1 m to1.2 m band, Bismuth and Raman amplifiers, pulse gating and wavelength conversion fibre basedsolutions. This last function is certainly the more challenging in the project.Periodically Poled Singlemode Fibres (PPSF) for Second Harmonic Generation (SHG) have beenproven at laboratory scale but breakthrough approaches are required for this technology to be integrated in future systems. Various innovative approaches, in particular the use of Micro-structured Optical Fibres (MOF), will be investigated to convert this promising technology into potential products.SHG and other functions developed in CHARMING will be integrated in gain-switched and modelockedlasers at different wavelengths in the visible. The compatibility of these sources with the requirements of the imaging applications targeted in the project will be demonstrated.Finally, the performances of the devices will be pushed beyond these specifications (in the Watt level)for targeting a broader potential impact (like for instance, applications in micromachining).
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: SPIRE-01-2014 | Award Amount: 5.59M | Year: 2015
Real-time measurements of multi-components in process streams respond to long demanded industry requirements of fast, accurate, reliable and economical process analyzers. The rise of such -yet unavailable systems will lead to a paradigm change throughout the process control and production chain. Significant cost savings from the Total-Cost-of-Ownership to improved process efficiency will result. We focus on the development of compact, robust and maintenance-free sensors for fast in-line multi-species chemical composition measurements for process analytics of many technically relevant gases such as hydrocarbons. The projected sensors will replace state-of-the-art systems of elevated cost and pollution. We will extend established laser-based in-line gas sensing to the mid-infrared chemical fingerprint spectral range for multi-species detection. The developments base upon two key technologies: (1) The integration of mid-IR laser arrays and (2) the advancement of spectroscopic and chemometric data evaluation. Tasks performed today with extractive systems with a delayed response of several minutes will become available within seconds and negligible delay. Demonstrators will be integrated in the control loop of a petro-chemical plant allowing significant improvements as optimized product quality, minimized waste and thus less environmental pollution and increased safety in cases where hazardous conditions have to be detected without delay. The consortium represents the whole value added chain with major players in the field of mid-IR laser sources and their integration (nanoplus, III-V Lab), as well as a major player in the field of process analyzing equipment (Siemens AG). The contributions of scientifically established universities and institutes (CEA Leti, Universitt Wrzburg and Politechnika Wroclawska) and one SME (Airoptic) complete together with a prominent representative of the petrochemical industry (PREEM AB) as end user the consortium.
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2011.3.5 | Award Amount: 3.16M | Year: 2012
The WideLase proposal focuses on compact, rugged and cost effective laser sources with wide tuning range for safety and security applications in the 3.3 to 7.0 m wavelength range.Three particular challenging applications with significant market potential are investigated within the project. There are no suitable application grade semiconductor lasers for these sensor applications yet available on the market. The aim of the WideLase proposal is to overcome these limitations and to achieve the following goals:Novel Interband Cascade based laser structures with wide gain bandwidth will be realized enabling room temperature continuous wave operation. The developed structures will exceed existing Quantum Cascade Laser performance figures in the targeted mid infrared range.Novel monolithic concepts for electrical tuning based on multi-section DFB as well as acousto-opto-electronic lasers will be developed for the first time in the wavelength range of interest. This will result in monolithic devices with an unprecedented tuning range of up to 200nm formerly in reach only by external cavity lasers, which are not suitable for the targeted applications mainly because of their high cost and their lack of ruggedness.These novel high performance photonic sources will allow the development of the following highly sensitive detection systems:- Laser based sensor for remote detection of alcohol against drunk driving- Laser based sensor for formaldehyde monitoring- Laser based sensor for hydrocarbon leak detection.In order to reach these goals, significant challenges have to be overcome in various fields, ranging from epitaxial semiconductor growth via laser design and processing to mid infrared sensor development. The consortium comprises renowned research groups, academic and industrial SME partners from across Europe with a range of complementary competencies covering all aspects from semiconductor material development to photonic components and sensor systems.
Agency: European Commission | Branch: H2020 | Program: IA | Phase: ICT-28-2015 | Award Amount: 17.24M | Year: 2016
The MIRPHAB (Mid InfraRed PHotonics devices fABrication for chemical sensing and spectroscopic applications) consortium will establish a pilot line to serve the growing needs of European industry in the field of analytical micro-sensors. Its main objectives are to: provide a reliable supply of mid-infrared (MIR) photonic components for companies incl. in particular SMEs already active in analytical MIR sensing reduce investment cost to access innovative MIR solutions for companies already active in the field of analytical sensors, but new to MIR photonics based sensing attract companies new to the field of analytical sensors, aiming to integrate -sensors into their products. To fulfil those objectives, MIRPHAB is organized as a distributed pilot line formed by leading European industrial suppliers of MIR photonic components, complemented by first class European R&D institutes with processing facilities capable of carrying out pilot line production. MIRPHAB provides: access to MIR photonic devices via mounted/packaged devices for laser-based analytical MIR sensors expert design for sensor components to be fabricated in the pilot line plus training services to its customers. The platform will be organized such that new developments in MIR micro- and integrated optic components and modules can be taken up and incorporated into the MIRPHAB portfolio. MIRPHAB will work on a convincing scheme for the flow of hardware and information, suitable to operate a distributed pilot line efficiently. MIRPHAB will develop sound business cases and a compelling business plan. Potential cost-performance breakthroughs will be shown for reliable MIR sensing products based on building blocks provided by MIRPHAB. MIRPHAB will become a sustainable source of key components for new and highly competitive MIR sensors, facilitating their effective market introduction and thus significantly strengthening the position and competitiveness of the respective European industry sector.
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2007.3.5 | Award Amount: 3.35M | Year: 2008
The SensHy proposal focuses on novel photonic gas sensors for the detection of hydrocarbons. Hydrocarbons can be detected most sensitively in the 3.0 to 3.6 m wavelength range. Two particular challenging applications with significant market potential are investigated within the project. Unfortunately there are no application grade semiconductor lasers in this wavelength range yet: On the short-wavelength side of this range interband lasers are available (RT cw operation for emission up to about 3.0 m), while intraband quantum cascade lasers were demonstrated on the long-wavelength side (RT cw operation for emission above about 3.8 m). An additional complication for applications in gas detection is given by the maximum available tuning range for suitable mono mode laser diodes, which is currently limited to a few nanometers. Concepts for an increased tuning range have so far been predominantly investigated at wavelengths around 1.55 m for telecom applications. The aim of the SensHy proposal is to overcome these limitations and to achieve the following goals:\n\n- realize GaSb based laser material enabling RT cw operation in the wavelength range from 3.0 to 3.6 m\n- develop multi-section DFB/DBR Lasers with increased electrical tuning capability\n- demonstrate highly sensitive hydrocarbon detection making use of widely tuneable lasers and novel digital-signal-processing schemes to identify various gas constituents within a multi-component hydrocarbon gas mixture\n\nIn order to reach these goals significant challenges have to be overcome in various fields ranging from epitaxial semiconductor growth via laser design and processing to mid infrared sensor development of the project. For this the consortium comprises renowned research groups, academic and industrial partners including SMEs from across Europe with a range of complementary competencies covering all aspects from semiconductor material and characterization to photonic components and sensor systems.
Scheuermann J.,Nanoplus Nanosystems and Technologies GmbH |
Weih R.,University of Würzburg |
Von Edlinger M.,Nanoplus Nanosystems and Technologies GmbH |
Nahle L.,Nanoplus Nanosystems and Technologies GmbH |
And 4 more authors.
Applied Physics Letters | Year: 2015
In this work, single-mode distributed feedback (DFB) interband cascade laser (ICL) devices with record short wavelength emission below 2.8μm are presented. Pulsed measurements based on broad area laser devices with a cavity of 2mm length and 150μm width showed threshold current densities of 383A/cm2 at T=20°C and a characteristic temperature T0 of 67K. Fabricated DFB devices were operated in continuous wave mode at room temperature, with threshold currents of 57mA and demonstrated side mode suppression ratios of larger than 25dB. The devices showed current tuning ranges of 7nm and total (including drive current and temperature) tuning ranges of 12nm, with respective tuning rates of 21nm/W, 0.13nm/mA and 0.29nm/K. Using the full spectral gain bandwidth of the underlying ICL material, single-mode DFB emission was observed within a wavelength range of 150nm utilizing different DFB grating periods. © 2015 AIP Publishing LLC.
Zeller W.,Nanoplus Nanosystems and Technologies GmbH |
Naehle L.,Nanoplus Nanosystems and Technologies GmbH |
Fuchs P.,Nanoplus Nanosystems and Technologies GmbH |
Gerschuetz F.,Nanoplus Nanosystems and Technologies GmbH |
And 2 more authors.
Sensors | Year: 2010
Recent years have shown the importance of tunable semiconductor lasers in optical sensing. We describe the status quo concerning DFB laser diodes between 760 nm and 3,000 nm as well as new developments aiming for up to 80 nm tuning range in this spectral region. Furthermore we report on QCL between 3 μm and 16 μm and present new developments. An overview of the most interesting applications using such devices is given at the end of this paper. © 2010 by the authors.
Wolff M.,Hamburg University of Applied Sciences |
Rhein S.,Hamburg University of Applied Sciences |
Bruhns H.,Hamburg University of Applied Sciences |
Nahle L.,Nanoplus Nanosystems and Technologies GmbH |
And 2 more authors.
Sensors and Actuators, B: Chemical | Year: 2013
To the best of our knowledge, we present for the first time spectroscopic methane measurements using a laser diode at 3.3 μm operated in continuous mode at room temperature. The DFB-type laser emits a maximum optical output power of 1.5 mW with a spectral linewidth below 10 MHz. This novel kind of semiconductor laser allows precise photoacoustic measurements of characteristic methane absorption structures in the v3 band. In addition, the setup enables a detection limit below 1 ppm. © 2013 Elsevier B.V. All rights reserved.
nanoplus Nanosystems and Technologies GmbH | Date: 2015-05-01
Embodiments relate to a semiconductor laser having a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser.
nanoplus Nanosystems and Technologies GmbH | Date: 2014-10-24
The invention relates to a semiconductor laser diode (01) having a substrate layer, a first doped cladding layer (02) and a second doped cladding layer (09), at least one wave guide (03, 04), an active layer, a cladding layer structure (05) that is adjacent to the active layer or to the at least one wave guide (03, 04), and at least one interdigital transducer (08), wherein the at least one interdigital transducer (08) is adjacent to the cladding layer structure (05) and the cladding layer structure (05) has at least a first area (06) that is realized as a substantially undoped semiconductor layer and has, at least in sections, a second area (07) that is adjacent to the first area (06) at one side and to the interdigital transducer (08) at another side, the second area (07) having a reduced density of free charge carriers as compared to the first area (06).