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Patent
Nanometrics Incorporated | Date: 2016-07-22

A metrology target is designed for monitoring variations in a multiple patterning process, such as a self-aligned doubled patterning (SADP) or self-aligned quadruple patterning (SAQP) process. The metrology target may include a plurality of sub-patterns. For example, the metrology target may be a three-dimensional (3D) target rather than a conventional two-dimensional line-space target design. The 3D target design includes multiple sub-patterns arranged with a pitch in a direction that is different than the pitch of the lines and trenches. The pitch of the sub-patterns is sufficient so that multiple sub-patterns are simultaneously within the field of measurement.


Patent
Nanometrics Incorporated | Date: 2017-05-10

An optical metrology device is capable of detection of any combination of photoluminescence light (117), specular reflection (143) of broadband light, and scattered light (115) from a line across the width of a sample (101). The metrology device includes a first light source that produces a first illumination line on the sample (101). A scanning system (116) may be used to scan an illumination spot across the sample to form the illumination line. A detector (130) collects the photoluminescence light (117) emitted along the illumination line. Additionally, a broadband illumination source may be used to produce a second illumination line on the sample (101), where the detector (130) collects the broadband illumination reflected along the second illumination line. A signal collecting optic (402) may collect the photoluminescence light (117) and broadband reflected light (143) and focus it into a line, which is received by an optical conduit (412). The output end of the optical conduit (112) has a shape that matches the entrance of the detector (130).


Patent
Nanometrics Incorporated | Date: 2017-06-07

An integrated metrology module includes a chuck for holding a sample and positioning the sample with respect to an optical metrology device, a reference chip for the optical metrology device, the reference chip being movable to various positions with respect to the optical metrology device, and a reference chip purge device provides a flow of purge gas or air over the reference chip while the reference chip is in the various positions. The reference chip purge device may be static or movable with the reference chip.


Patent
Nanometrics Incorporated | Date: 2016-06-09

An optical metrology device is capable of detection of any combination of photoluminescence light, specular reflection of broadband light, and scattered light from a line across the width of a sample. The metrology device includes a first light source that produces a first illumination line on the sample. A scanning system may be used to scan an illumination spot across the sample to form the illumination line. A detector collects the photoluminescence light emitted along the illumination line. Additionally, a broadband illumination source may be used to produce a second illumination line on the sample, where the detector collects the broadband illumination reflected along the second illumination line. A signal collecting optic may collect the photoluminescence light and broadband light and focus it into a line, which is received by an optical conduit. The output end of the optical conduit has a shape that matches the entrance of the detector.


Patent
Nanometrics Incorporated | Date: 2015-07-24

An integrated metrology module includes a chuck for holding a sample and positioning the sample with respect to an optical metrology device, a reference chip for the optical metrology device, the reference chip being movable to various positions with respect to the optical metrology device, and a reference chip purge device provides a flow of purge gas or air over the reference chip while the reference chip is in the various positions. The reference chip purge device may be static or movable with the reference chip.


Patent
Nanometrics Incorporated | Date: 2015-07-24

A cover plate or lens for an optical metrology device that is positioned under a wafer during measurement is protected with a purge device. The purge device may include a ring that extends around a periphery of the cover plate or lens. The ring includes a plurality of apertures through which a purge gas or air is expelled over the surface of the cover plate or lens. Additionally or alternatively, one or more heating elements may be provided that extend around the periphery of the cover plate or lens. The heating elements heat the cover plate above a dewpoint temperature of contaminant vapor. A heat sensor may be used to monitor the temperature of the cover plate to control the heating elements and/or to compensate for optical changes of the cover plate caused by heating during measurement of a wafer.


Patent
Nanometrics Incorporated | Date: 2015-07-24

A measurement target for a semiconductor device is designed. The semiconductor device includes a structure to be measured that has a spectrum response that is comparable to or below system noise level for an optical critical dimension measurement device to be used to measure the structure. The measurement target is designed by obtaining a process window and design rules for the semiconductor device and determining prospective pitches through modeling to identify pitches that produce a spectrum response from the structures that is at least 10 times greater than a system noise level for the optical critical dimension measurement device. A resonance window for each prospective pitch is determined and robustness of the resonance window is determined through modeling. Pitches of the array are selected based on the prospective pitches, resonance windows, and robustness. The target design may accordingly be produced and used to generate a measurement target.


A plurality of overlay errors in a structure is determined using a target that includes a plurality of diffraction based overlay pads. Each diffraction based overlay pad has the same number of periodic patterns as the structure under test. Additionally, each diffraction based overlay pad includes a programmed shift between each pair of periodic patterns. The pads are illuminated and the resulting light is detected and used to simultaneously determine the plurality of overlay errors in the structure based on the programmed shifts. The overlay errors may be determined using a subset of elements of the Mueller matrix or by using the resulting spectra from the pads.


Patent
Nanometrics Incorporated | Date: 2016-07-11

An interferometric metrology device characterizes a surface topography of a sample at different length scales by combining the interferometric data into blocks of different length scales or by filtering the interferometric data at different length scales and then determining statistical moments or surface properties of the surface topography at the different length scales. The interferometric metrology device determines a best focus position for a processing tool based on different length scales and/or based on weighting functions that are based on the structure-dependent focus budget and a variable local topography. Additionally, the topography data may be used by itself or combined with design data, design simulation depth-of-focus data and lithography scanner focus data to define regions of interest for additional characterization with a different metrology device.


Patent
Nanometrics Incorporated | Date: 2015-11-09

An optical metrology device is capable of detection of any combination of photoluminescence light, specular reflection of broadband light, and scattered light from a line across the width of a sample. The metrology device includes a first light source that produces a first illumination line on the sample. A scanning system may be used to scan an illumination spot across the sample to form the illumination line. A detector spectrally images the photoluminescence light emitted along the illumination line. Additionally, a broadband illumination source may be used to produce a second illumination line on the sample, where the detector spectrally images specular reflection of the broadband illumination along the second illumination line. The detector may also image scattered light from the first illumination line. The illumination lines may be scanned across the sample so that all positions on the sample may be measured.

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