Wright-Patterson AFB, United States
Wright-Patterson AFB, United States

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Zhang Y.,Nanoelectronic Materials Branch | Eyink K.G.,Nanoelectronic Materials Branch | Peoples J.,Nanoelectronic Materials Branch | Mahalingam K.,Nanoelectronic Materials Branch | And 2 more authors.
Journal of Crystal Growth | Year: 2016

ErAsSb nanoparticle (NP) growth is investigated on GaAs surface by molecular beam epitaxy. ErAsSb NP grown under Sb flux is compared to pure ErAs NP grown under As flux. It is found the incorporation of Sb is rather low in ErAsSb. However, ErAsSb NP exhibits very different structural and optical properties. ErAsSb NPs on GaAs preferentially elongates along the [1-10] direction with increasing deposition and growth temperature. The absorption peak for light polarized parallel to the long axis of the particles is found to occur at longer wavelengths than those for light polarized perpendicular to the long axis of the particles. The results can be attributed to Sb surfactant effect. © 2015 Elsevier B.V. All rights reserved.

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