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Yanggu, South Korea

Kim S.C.,Yeungnam University | Park H.,Yeungnam University | Lee E.-W.,Yeungnam University | Han J.S.,Yeungnam University | And 5 more authors.
Thin Solid Films | Year: 2011

Binary stacked In2Se3/CuSe precursors were prepared onto substrates with different types of sodium (Na) sources, i.e., soda-lime glass (SLG), sodium-free glass (SFG), SFG with Na-doped Mo layers (Mo:Na), in a co-evaporation system. SIMS depth profiles for In2Se3 precursors deposited at 400 °C demonstrated that the different amounts of Na diffused out of each Na source. High-temperature XRD experiments revealed that there was no significant effect of Na on the reaction path of CuInSe2 formation from In2Se3/CuSe stacked precursor. The reaction rate of the precursor without Na (i.e., SFG/Mo/In2Se 3/CuSe) was found to be higher than that of those with Na (i.e., SLG/Mo/In2Se3/CuSe and SFG/Mo:Na(750 nm)/Mo/In 2Se3/CuSe). © 2011 Elsevier B.V. Source

Park H.,Yeungnam University | Kim S.C.,Yeungnam University | Lee S.-H.,Yeungnam University | Koo J.,Yeungnam University | And 4 more authors.
Thin Solid Films | Year: 2011

Precursor structures of Mo/CuGa/In, Mo/In/CuGa, Mo/In/CuGa/In and Mo/CuGaIn were prepared on thin sodium-free glass by the sputtering of CuGa and In targets. In-situ phase evolution of precursors with temperature was investigated by a high-temperature X-ray diffraction system, which verified the existence and transformation of several intermetallics: Cu2In, Cu 11In9, Cu3Ga, Cu7In3, Cu9Ga4 and Cu16In9 as well as elemental In. MoSe2 layers produced during selenization were detected by scanning electron microscope and X-ray diffraction, with their thicknesses varying by precursor structure. Adhesion strength of Cu(InGa)Se2 to each Mo layer was assessed by applying CdS chemical bath deposition process to each sample. © 2011 Elsevier B.V. Source

Park S.-Y.,Yeungnam University | Lee E.-W.,Yeungnam University | Lee S.-H.,Yeungnam University | Park S.-W.,Yeungnam University | And 7 more authors.
Current Applied Physics | Year: 2010

A section of complete solar cell device consisting of Ag/Al:ZnO/i-ZnO/ Cu(In,Ga)Se2/Mo/glass was in situ annealed inside of TEM column and the interfacial variation was directly investigated in real-time. A pore structure was formed in CdS layer adjacent to CIGS after annealing at 200 °C, and the compositional mapping obtained after 300 °C annealing showed a heavy diffusion of Ga into ZnO layer. Therefore, Ga-assisted Cd diffusion is suggested to be responsible for the pore evolution, which is highly relevant to the device degradation after high temperature annealing. © 2010 Elsevier B.V. All rights reserved. Source

Kim M.,Kyungpook National University | Lee S.,Nano Fusion Research Team | Sohn S.,Kyungpook National University
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2010

In order to investigate the effect of CdCl2 heat treatment on the physical properties of the CdTe thin films grown by a sputtering method, the CdTe thin films were coated with CdCl2. The recrystallisation, grain growth and randomization were investigated by monitoring the phase transition of CdCl2 heat treated CdTe specimens during temperature ramp annealed using in situ high-temperature X-ray diffraction. The result shows that the recrystallisation of the CdTe(111) texture and other textures does not occur simultaneously but sequencially. The XRD data shows there was no overlapped temperature region for recrystallisation between (111) and other textures. © 2010 IEEE. Source

Huh K.S.,Nano Fusion Research Team | Hong H.J.,AVATEC Co. | Lee E.W.,Yeungnam University | Park S.Y.,Yeungnam University | And 2 more authors.
Molecular Crystals and Liquid Crystals | Year: 2010

We have discussed the effects of substrate temperature and Sb 2O3 composition on properties of ATO thin films by RF magnetron sputtering. Above 250°C of substrate temperature, the films exhibited good crystallographic and electrical properties. At fixed substrate temperature of 250°C, the electrical properties of ATO film were enhanced with increasing Sb concentration. From the AES depth profile and XRD pattern for the film with 92:8 of SnO2:Sb2O3 composition, we found that Sb was uniform and there was no secondary phase or phase separation in ATO film. The rms roughness of the films was minimum value, 1.54nm, at the composition of 92:8wt%. For the ATO thin film with 92:8 composition exhibited good chemical endurance and thermal stability, which seems to be good for touch panel applications. Copyright © Taylor & Francis Group, LLC. Source

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