Nanjing Guobo Electronics Co.

Nanjing, China

Nanjing Guobo Electronics Co.

Nanjing, China
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Zhang H.,Nanjing Guobo Electronics Co. | Miao Y.,Nanjing Guobo Electronics Co. | Ren X.,Nanjing Electronic Devices Institute | Zhang J.,Nanjing Electronic Devices Institute
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

This paper presents the design and performance of a 100.0 MHz quartz crystal oscillator employing a combination of technologies to achieve good spectral performance under vibration. The measurements of the oscillator show a static phase noise of -143.0 dBc/Hz@1 kHz, -156.8 dBc/Hz@10 kHz. Under random vibration, the measurements of the oscillator show a phase noise of -137.4 dBc/Hz@1 kHz, -150.9 dBc/Hz@10 kHz.


Xu Z.,Nanjing Guobo Electronics Co. | Ying H.,Nanjing Guobo Electronics Co. | Li N.,Nanjing Guobo Electronics Co. | Li X.,Nanjing Guobo Electronics Co. | And 3 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

GaAs RF switch has been designed using Enhancement/Depletion PHEMT technology. This product has fealures of low loss, high isolation, high power capability, high linearity, which is produced by GaAs 0.5 μm gate-length E/D PHEMT standard process. The switch circuit and TTL driver are integrated into one chip, and an ESD-protection circuit is used to improve its ESD level. The measurement results are as follows: in 0.01~5.0 GHz frequency range, insertion loss≤1.2 dB@3 GHz, ≤1.6 dB@5 GHz, VSWR≤1.5, isolation≥60 dB@3 GHz, ≥52 dB@5 GHz, P -1≥30 dBm, IP3≥+52 dBm.


Zheng Y.,Nanjing Guobo Electronics Co. | Wu J.,Nanjing Guobo Electronics Co. | Qian F.,Nanjing Electronic Devices Institute | Chen X.,Nanjing Guobo Electronics Co. | And 3 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

The surface mount microwave package based on AlN multilayer substrate has been fabricated by using vertical transition for signal from bottom to top surface. This transition shows that the return loss is less than -15 dB and the insertion loss is less than 1.0 dB. A packaged 6~18 GHz amplifier demonstrates the package dimension of 5 mm×5 mm×1.2 mm, less than -10 dB return loss in band, 15 dB gain and 1 dB gain flatness. Another C-band 5 W power amplifier by this packaging technique has the dimension of 8 mm×8 mm×1.2 mm, and demonstrates less than -10 dB return loss and 25 dB gain in band, 37 dBm saturation output power and 35% power-added-efficiency. The performance of the packaged amplifier can meet the requirements of microwave communication and radar. It is suitable for mass production because the device can be mounted by reflow.


Chen L.,Nanjing Guobo Electronics Co. | Chen L.,Nanjing Electronic Devices Institute | Chen X.,Nanjing Guobo Electronics Co. | Chen X.,Nanjing Electronic Devices Institute | And 5 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2015

A broadband active down-mixer using 0.18 μm SOI CMOS process for digital phased-array radar application was designed. A RF input amplifier, a LO amplifier, a Gilbert mixer and an IF amplifier were integrated in this chip, which was able to output differential signal directly and single-ended signal by an off-chip balun. The measurements show that the RF and LO input VSWR is below 2 from 0.7 GHz to 4.0 GHz, while the IF output VSWR is below 2 from 25 MHz to 1 GHz. The power conversion gain is 10 dB and the output 1 dB compression point is 3.3 dBm when the chip is used for differential output. The supply voltage is 2.5 V and the DC current is 64 mA. The chip area is only 1.0 mm×0.9 mm. ©, 2015, NUAA Printing House. All right reserved.


Cai X.,Nanjing Southeast University | Yu X.,Nanjing Southeast University | Shi X.,Nanjing Guobo electronics Co. | Qian J.,Applied Technology Internet | And 2 more authors.
ISAP 2013 - Proceedings of the 2013 International Symposium on Antennas and Propagation | Year: 2013

In this paper, a quantum communication routing protocol is designed for quantum ad hoc network. This protocol is on-demand routing based on EPR numbers shared by adjacent nodes, concerning that it is a limited source. When quantum channel is established, quantum states from one quantum device can be teleport to another even when they do not share EPR pairs wirelessly. Part of information transferred by classic channel can be dealt with using simple logics. In this way, the goal of safety communication between source and destination is realized, improving the weakness of ad hoc network such as Eavesdropping and Active attacks. In terms of time complexity, the mechanism transports a quantum bit in time almost the same as the quantum teleportation does regardless of the number of hops between the source and destination. © 2013 Antenna Society of the Chinese Institute of Electronics.


Li N.,Nanjing Guobo Electronics Co. | Ye J.,Nanjing Guobo Electronics Co. | Yang L.,Nanjing Guobo Electronics Co.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2015

A type of GaAs small size transceiver chip product for 802.11 b/g/n WIFI wireless communication system was introduced. The chip was designed by using 0.5 μm GaAs PHEMT foundry including Enhancement/Depletion FET. The chip was built up by three parts, including SP3T switch, 2.4 GHz LNA and TTL driver. It could be applied in four work states, including receive, bypass, bluetooth, transmit and could provide low noise, high gain, high isolation and low power dissipation, etc. Under receive mode, gain≥13 dB@2.4 GHz, NF≤2 dB@2.4 GHz, work current≤15 mA. Under bluetooth and transmit mode, its 1 dB compression point≥28 dBm. At the same time, this chip was used to integrate inverter driver which could support 1.8/33 V TTL. This transceiver chip can be used in most of 2.4 GHz WIFI(Wireless Fidelity) wireless transferring system. ©, 2015, NUAA Printing House. All right reserved.


Zhang M.,Nanjing Electronic Devices Institute | Zhang M.,Nanjing Guobo Electronics Co. | Zhang Y.,Nanjing Electronic Devices Institute | Zhang Y.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | And 7 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2014

A 4 bit phase digitizing DAC for DRFM with the area of 2.1 mm×1.4 mm and the power consumption of 420 mW was designed by adopting the nonlinear current steering structure and implemented by standard semiconductor technology.Test results show that the instantaneous bandwidth of DAC is higher than 1 GHz. When it is cascade-connected with the 4 bit phase digitizing ADC, the measured SFDR is better than -20 dBc. The performance of this 4 bit phase DAC is superior to the 3 bit one.


Zhu Y.,Nanjing Electronic Devices Institute | Xu Z.,Nanjing Electronic Devices Institute | Xu Z.,Nanjing Guobo Electronics Co. | Dai L.,Nanjing Electronic Devices Institute | And 2 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2013

The paper provides a new designed structure for LTCC low pass filter. Two low pass filters are used for transmitter channel in an antenna switch module. Their whole size is only 2.5 mm×3.2 mm×0.75 mm with good performance. The insertion loss of the GSM850/900 MHz LPF is only 0.75 dB, the second and third harmonic suppression is 23 dBc and 40 dBc respectively. The insertion loss of the GSM1 800/1900 MHz LPF is less than 0.7 dB, the second and third harmonic suppression is 26 dBc and 28 dBc respectively.


Qu J.,Nanjing Electronic Devices Institute | Zhang Y.,Nanjing Electronic Devices Institute | Zhang Y.,Science and Technology on Monolithic Integrated Circuits and Modules Laboratory | Zhang Y.,Nanjing Guobo Electronics Co. | Qian F.,Nanjing Electronic Devices Institute
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2013

This paper presents a dual-stage, fully-differential track-and-hold circuit, in which both stages have independent clock buffer, and can be configured to track mode independently. This circuit is implemented with 1 μm GaAs HBT technology with the area of 1.8 mm×2 mm and the power consumption of 2.75 W. The proposed track-and-hold circuit is capable of operating under 1 GS/s, and sampling bandwidth exceeds 7 GHz with 250 mV peak to peak single-ended input; It has 8 bit ENOB when the input single-ended input signal is under 250 mV peak to peak with frequency from DC to 2 GHz.


Jiang D.,Nanjing Guobo Electronics Co. | Jiang D.,Nanjing Electronic Devices Institute | Chen X.,Nanjing Guobo Electronics Co. | Chen X.,Nanjing Electronic Devices Institute | And 2 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2013

A high power millimeter wave single-pole double-through(SPDT) switch MMIC is designed and fabricated using 76.2 mm(3 inch) wafer GaAs PIN technology. By using shunt SPDT switch configuration, high power performance can be obtained. Over the 30 to 36 GHz operating bandwidth for on-chip measurement the path in ON state appears less than 1.0 dB insertion loss and better than 1.5 VSWR. The path in OFF state appears large than 34 dB isolation.In ON state, the input power for this switch at 0.5 dB compression point is higher than 5 W.

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