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Sun H.,National University of Singapore | Guo Y.-X.,National University of Singapore | Wang Z.,Nanjing Electronic Devices Institute
IEEE Transactions on Antennas and Propagation | Year: 2013

This communication presents a 60-GHz wideband circularly polarized (CP) U-slot patch antenna array of 4× 4 elements on low temperature cofired ceramic (LTCC). A CP U-slot patch antenna is used as the array element to enhance the impedance bandwidth and a stripline sequential rotation feeding scheme is applied to achieve wide axial ratio (AR) bandwidth. Meanwhile, a grounded coplanar waveguide (GCPW) to stripline transition is designed for probe station measurement. The fabricated antenna array has a dimension of 14× 16× 1.1 mm}3. The simulated and measured impedance bandwidths, AR bandwidths, and radiation patterns are investigated and compared. Measured results show that the proposed antenna array has a wide impedance bandwidth from 50.5 GHz to 67 GHz for vert S} -11} vert < -10∼ dB}, and a wide AR bandwidth from 54 GHz to 65.5 GHz for AR}< 3∼ dB}. In addition, it exhibits a peak gain of 16 dBi and a beam-shaped pattern with 3-dB beam width of 20 circ. Moreover, its AR keeps below 3 dB within the 3-dB beam width. © 1963-2012 IEEE. Source


Chu H.,National University of Singapore | Chu H.,Nanjing University of Science and Technology | Guo Y.-X.,National University of Singapore | Wang Z.,Nanjing Electronic Devices Institute
IEEE Transactions on Antennas and Propagation | Year: 2013

Wideband 60-GHz vertical off-center dipole antenna and its arrays on low-temperature cofired ceramic substrate are presented in this paper. The dipole antenna is designed using the off-center-fed technology to cover all the four channels defined in 60-GHz standards from 57 to 66 GHz. A 4 \times 4 planar array is optimized to achieve a maximum gain of 15.6 dBi at 60 GHz and above 10.2 dBi in the passband, while a beam-steering array is optimized to give a 5-dB measured beamwidth wider than 80\circ at 60 GHz. Measured results indicate our designs meet the above requirements well and satisfy 60-GHz applications. © 1963-2012 IEEE. Source


Zhang Z.,Nanjing Southeast University | Liao X.,Nanjing Southeast University | Han L.,Nanjing Southeast University | Cheng Y.,Nanjing Electronic Devices Institute
Sensors and Actuators, A: Physical | Year: 2011

This paper first presents the detection and non-detection function of an inline RF MEMS power sensor by employing two shunt capacitive MEMS switch structures. It solves a problem that regardless of whether the power sensor needed to detect the power, a certain microwave power will always be detected, which results in the unnecessary power loss. This power sensor is based on sensing a certain percentage of the incident microwave power coupled by a MEMS membrane. The effect of an impedance matching structure for improving microwave characteristics, a capacitance compensating structure for obtaining the wideband response, and the two shunt capacitive MEMS switch structures for achieving both states conversion together associated in this sensor, on the performance of the power sensor is proposed in this paper, and verified by the simulation and measurement. This power sensor offers the compatible capability with GaAs MMIC technology. In the detection state, experiments demonstrate that the design of the improved power sensor has resulted in the reflection loss of less than -17 dB, the insertion loss of less than 0.8 dB, and the flatness of the frequency response at X-band. And a sensitivity of more than 36 μV mW-1 and a resolution of 0.316 mW are obtained at 10 GHz under the normal ambient temperature. Yet in the non-detection state, the design has resulted in the reflection loss of less than -19 dB and the insertion loss of less than 0.6 dB. The measured actuation voltage of MEMS switches is about 42 V. © 2011 Elsevier B.V. All rights reserved. Source


Zhu J.,Nanjing Electronic Devices Institute
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

The technologies and developments of 3D-stack and TSV (Through silicon via) are introduced. The advantages and disadvantages of W2W (Wafer to wafer) and D2W (Die to wafer) are discussed. The introduction focuses on the key technology of TSV interconnect process. The process flows and features of via first, via middle and via last are presented. The road map and market value of TSV technology are introduced. 3D-stack and TSV have become a hot research field of microelectronics. They are the inevitable trend of microelectronics and MEMS technology and the key technology of hybrid integration microsystem. Source


Zheng W.,Nanjing Electronic Devices Institute
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2012

It is very important to describe FET's large-signal impedance accurately for MMIC design. In order to simulate FET's large signal characteristic, it is necessary to research its gate equivalent capacitance model in the large signal model, especially in high frequency. Based on previous results, the paper deduces a new gate-source/gate-drain capacitance equation. By comparing the loadpull results of a 6×80 μm GaAs PHEMT device, it is shown that the accurate gate equivalent capacitance model improves the precision of FET's large signal model greatly. This helps the research of device model and MMIC design. Source

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