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Yamanashi, Japan

Nakaya Co. | Date: 2012-01-19

Provided is a hand-held electric cutting machine having excellent spark control capability, high stability, good usability and high versatility. A unit having: a first guard which covers a part of a disc-shaped cutting tool; a second guard which covers a part of the disc-shaped cutting tool and is rotatably attached to the first guard; a movable guard which is rotatable around outer peripheries of the first guard and the second guard, covers a part of the disc-shaped cutting tool, and is attached on the second guard; and a protector which covers an outside of the movable guard and is attached on the second guard, is attached to a hand-held electric tool serving as a driving source.

Muranaka T.,Yamanashi University | Sakano T.,Yamanashi University | Mizuguchi K.,Yamanashi University | Nabetani Y.,Yamanashi University | And 6 more authors.
Physica Status Solidi (C) Current Topics in Solid State Physics

Structural evaluation of the ZnO epitaxial layers grown by plasma-assisted molecular beam epitaxy (PAMBE) on the GaAs (111)B, c-plane (0001) and a-plane (11-20) sapphire (α-Al2O3) substrates was demonstrated by using high-resolution X-ray diffraction (XRD). The in-plane epitaxial relationships between the ZnO layers and the substrates were found to be ZnO(0001)〈11-20〉II GaAs(111)〈1-10〉, ZnO(0001)〈11- 20〉IIα-Al2O3 (0001) 〈1-100〉 and ZnO (0001)〈11-20〉IIα-Al2O3(11-20) 〈0001〉. All the ZnO layers were highly oriented to the c-axis but larger fluctuations of the c-axis were observed for the layers on the GaAs(111)B substrates. The lattice parameters of the ZnO layers were evaluated from the θ-2θ and ω-2θ scans, and reciprocal lattice mappings (RLMs). The in-plane compressive strains up to 0.3% in the ZnO layers on both the c-plane and a-plane sapphire substrates, and the in-plane tensile strains up to 0.4% in the ZnO films on the GaAs(111)B substrates were observed. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA. Source

Matsumoto T.,Yamanashi University | Mizuguchi K.,Yamanashi University | Horii T.,Yamanashi University | Sano S.,Yamanashi University | And 11 more authors.
Japanese Journal of Applied Physics

Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 °C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both c and a axes directions is observed for low-temperature-grown highly Ga-doped films. The relation between the mobility reduction and the lattice expansion is discussed. © 2011 The Japan Society of Applied Physics. Source

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