Patil A.,Lvh College |
Dighavkar C.,Lvh College |
Journal of Optoelectronics and Advanced Materials | Year: 2011
Thick films of pure and Al doped ZnO with various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. %) of Al were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700°C for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were studied using the scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDAX) and X-ray diffraction techniques respectively. The gas sensing studies were carried out in a static gas sensing system under normal laboratory conditions. The surface resistance of thick films changes when exposed to CO 2 gas. The Al doped films show significant sensitivity to CO 2 gas than pure ZnO film. 10 wt. % Al-doped ZnO films were found to be more sensitive to CO 2 gas exposed at 250°C than other doping concentrations with fast response and comparatively slow recovery time.
Shinde U.P.,Lvhcollege |
Patil A.V.,Lvhcollege |
Dighavkar C.G.,Lvhcollege |
Patil S.J.,Msgcollege |
And 3 more authors.
Optoelectronics and Advanced Materials, Rapid Communications | Year: 2010
Thin films of Zn-Te compound of varying compositions and thicknesses have been formed on glass substrates employing three temperature method. The photoconductivity study was made at dark and illuminated conditions. The spectral response of photocurrent as a function of certain wavelength of incident radiations, maximum photocurrent is developed at about 520 nm irrespective of composition and thickness. For the same composition of Zn and Te, photocurrent is function of applied bias voltage and the incident light intensity. The maximum photocurrent was developed at about thickness of 500 nm irrespective of composition and also stoichiometric ZnTe films irrespective of thickness at room temperature.