New Delhi, India

Moser Baer India, Ltd

moserbaer.com
New Delhi, India
SEARCH FILTERS
Time filter
Source Type

Patent
Moser Baer India, Ltd | Date: 2012-07-18

A method of manufacturing a semiconductor device (100a, 100b) is provided. The method includes providing a transparent substrate (104) having predefined active regions (202) and non-active regions (204). Thereafter, the method includes spraying droplets of a lacquer on the predefined active regions (202) to form corresponding lacquer layer regions (106, 402), such that the non-active regions (204) do not have presence of the lacquer. The lacquer layer regions (106, 402) are of a predefined thickness to enable their functional texturing. Texturing of lacquer layer enables light trapping or light extraction. Thereafter, one or more semiconductor layers (110, 112) are deposited on the lacquer layer regions (106, 402) and a cover substrate (116) is provided. The cover substrate (116) is joined to the transparent substrate (104) at a portion of the non-active regions (204) and encapsulates the lacquer layer regions (106, 402) and the one or more semiconductor layers (110, 112) between itself and the transparent substrate (104).


A method of manufacturing an optoelectronic device (100a, 100b) is provided. The method includes providing a base substrate (104) having a substantially flat surface and depositing a lacquer on the base substrate (104) to form a lacquer layer. Following this, a master stamper formed by a plurality of adjoining small size stampers (208) is provided. The master stamper includes negative impressions (210) of light management structures, such that the light management structures are separated by one or more seam lines (304) corresponding to abutting edges of the plurality of adjoining small size stampers (208). The method also includes imprinting the light management structures (210) on the lacquer layer by pressing the master stamper against the lacquer layer. The imprinting of the light management structures 210 further causes imprinting of the one or more seam lines (304) on the lacquer layer. Thereafter, a transparent conducting oxide TCO layer (108, 122) is deposited on the lacquer layer and one or more functional lines (412, 414a, 414b) are applied on the TCO layer (108, 122), such that the one or more functional lines (412, 414a, 414b) substantially aligns with the one or more seam lines (304).


A method for manufacturing an optoelectronic device (100) is provided. The method includes providing a substrate (102). Thereafter, the method includes providing a lacquer layer (104) on the substrate (102). The method further includes providing light management texture in the lacquer layer (104). Providing light management texture in the lacquer layer (104) includes providing a replication substrate having a negative texture and imprinting the negative texture into the lacquer layer (104) using the replication substrate, such that the light management texture is created in the lacquer layer (104). Furthermore, the method includes providing a first electrode layer (108) on the lacquer layer (104). The method further includes etching, prior to deposition of first electrode layer (108), to enable formation of less steep light management texture in the lacquer layer (104) and subsequently less steep texture (202) on the first electrode layer (108) by etching at least one of the textures in the production of the negative texture on the replication substrate, or the light management texture on the lacquer layer (104) itself.


Patent
Moser Baer India, Ltd | Date: 2012-08-01

A light trapping layer (104) for use in a thin film solar cell is provided. The light trapping texture enhances efficiency of the thin film solar cell. The light trapping layer (104) has a plurality of substantially flat areas between a plurality of periodically repeating non-pointed depressions with rounded edges (504). The plurality of substantially flat areas (502) facilitates deposition and growth of a layer (108) of transparent conductive oxide over said light trapping layer. The plurality of periodically repeating non-pointed depressions with rounded edges (504) limit formation of at least one of cracks, voids, and low density areas in semiconductor layers of the thin film solar cell. Period of the non-pointed depressions (504) ranges between 100 nanometers and 1500 nanometers, and depth of said non-pointed depressions ranges (504) between 50 nanometers and 1200 nanometers.


Patent
Moser Baer India, Ltd | Date: 2012-10-10

In some embodiments of the present invention a method is provided for simultaneously forming electrical circuitry (206, 314) and functional light structures (204) on a curable lacquer layer (106, 122) deposited on a base substrate (104, 120) of an organic optoelectronic device (100a, 100b). The method includes applying (406) the lacquer layer (106, 122) on the base substrate (104, 120), contacting (410) a transfer substrate (300) against said curable lacquer layer (106, 122), curing the curable lacquer layer (106, 122) and removing the transfer substrate (300). Characterised in the method, contacting the transfer substrate (300) includes mating a mating surface (310) of the transfer substrate (300) with the curable lacquer layer (106, 122). The mating surface (310) has the electrical circuitry (314) on a first portion and negative impressions (312) of the functional light structures (204) on a second portion, such that the electrical circuitry (314) is releasably adhered to the mating surface (310). Further, the adhesion between the transfer substrate (300) and the electrical circuitry (314) is substantially lesser than adhesion between the electrical circuitry (314) and the curable lacquer layer (106, 122), contacting enables simultaneously embedding some or all of the electrical circuitry (314) in the curable lacquer layer (106, 122) as well as replication of the functional light structures (204) onto the curable lacquer layer (106, 122). Further, characterized in the method, the curing facilitates affixing the electrical circuitry (314) on the curable lacquer layer (106, 122).


Patent
Moser Baer India, Ltd | Date: 2012-07-18

A method of imprinting a texture on a rigid substrate (202), having area greater than 50 square centimeters, preferably greater than 200 square centimeters, is provided. The texture imprinted on the rigid substrate (202) facilitates light management through the rigid substrate (202). The method includes wet coating a layer of a curable material (204) on the rigid substrate (202). Thereafter, the method includes pressurizing a flexible stamp (206) over the layer of curable material (204) to imprint the texture. The flexible stamp (206) includes a bottom zone (304) having a texture profile corresponding to the texture. The bottom zone (304) has Youngs Modulus between 0.5 MPa and 3000 MPa and enables tolerance for microscopic defects during imprinting of the texture. The flexible stamp (206) also includes a top zone (302) having Youngs Modulus between 0.1 GPa and 10 GPa. The top zone (302) enables tolerance for macroscopic defects. Further, the method includes curing the layer of curable material (204). Finally, the method includes removing the flexible stamp (206).


Patent
Moser Baer India, Ltd | Date: 2013-10-02

An optoelectronic device (100) providing improved light management is provided. The optoelectronic device (100) includes a substrate (102, 202) having a substantially flat surface, a light management layer (104) provided on the flat surface, such that the light management layer (104) includes a first light management texture (212). The optoelectronic device (100) also includes a planarization layer (106, 216) on the first light management texture (212). The planarization layer (106, 216) has a top surface that is defined by a first portion and a second portion, such that the first portion is a substantially flat surface and the second portion includes a second light management texture (214) corresponding to the first light management texture (212). Further, the second light management texture (214) has dimensions relatively less than that of the first light management texture (212) and the first light management texture (212) and the second light management texture (214) enable light management in a waveguide mode and a surface plasmon polariton (SPP) mode respectively. The optoelectronic device (100) also includes a functional stack (108) over the planarization layer (106, 216), such that the second light management texture (214) propagates into the functional stack (108).


Patent
Moser Baer India, Ltd | Date: 2012-10-03

A method is provided for simultaneously forming functional light structures and grooves configured to hold electrical circuitry on a lacquer layer deposited on a base substrate, which is for use in an optoelectronic device. The method includes applying the lacquer layer on the base substrate and heating it beyond its glass transition temperature to soften it. Thereafter, a stamper is used to simultaneously replicate the grooves and the functional light structures onto the lacquer layer. The stamper has a mating surface, which has negative impressions of the grooves on its first portion and the functional light structures on its second portion. Thereafter, the lacquer layer is cooled and the electrical circuitry is formed in the grooves on the lacquer layer.


Patent
Moser Baer India, Ltd | Date: 2012-09-26

A barrier layer (202) capable of preventing permeability of moisture, oxygen, other gases, solvents and volatile organic compounds is provided. The barrier layer (202) includes a surface profile undulating in all directions. Further, the surface profile is characterized by the absence of non-undulating surface, straight lines and sharp edges. Further, the surface profile bends in reaction to at least one of thermal stress, mechanical stress, and load caused by deformation of an adjoining substrate or layer. This allows the barrier layer (202) to stretch and shrink in all directions in a plane along the surface profile of the barrier layer (202) and prevents cracking of the barrier layer.


Patent
Moser Baer India, Ltd | Date: 2012-10-03

A substrate (100) having a base layer (102, 302) and a secondary layer (110, 310) for use in an optoelectronic device (300a, 300b) is provided. The base layer (102, 302) of the substrate (100) includes a first surface (104, 304) and a second surface (106, 306). The first surface (104, 304) is configured to have one or more device components (316 - 328) of the optoelectronic device (300a, 300b) to be deposited thereon and the second surface (106, 306) supports a texture (108, 308) thereon to facilitate light management in the optoelectronic device (300a, 300b). The secondary layer (110, 310) of the substrate (100) is disposed over the texture (108, 308), such that a top surface (114, 314) of the secondary layer (110, 310) is substantially flat and acts as an interface between the optoelectronic device (300a, 300b) and an ambient medium. Also, the secondary (110, 310) layer of the substrate (100) enables at least one of protection of the texture (108, 308) from the ambient medium and vacuum-based handling of the substrate (100).

Loading Moser Baer India, Ltd collaborators
Loading Moser Baer India, Ltd collaborators