Moscow State Institute of Electronic Technique

Moscow, Russia

Moscow State Institute of Electronic Technique

Moscow, Russia
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Vinogradov A.I.,Moscow State Institute of Electronic Technique | Zaryankin N.M.,Moscow State Institute of Electronic Technique | Prokop'ev E.P.,Moscow State Institute of Electronic Technique | Timoshenkov S.P.,Moscow State Institute of Electronic Technique | Mikkhailov Yu.A.,State Institute of Electronic Technique
Russian Microelectronics | Year: 2011

The dependences that characteristics of deep etching of silicon have on the process parameters are investigated. In order to find the optimal modes that provide high selectivity to the mask and to decrease the aperture effect, we used the method of a multifactor experiment. The results are used to fabricate the actual microelectromechanic systems (MEMS). © Pleiades Publishing, Ltd., 2011.


Timoshenkov V.P.,Moscow State Institute of Electronic Technique
Russian Microelectronics | Year: 2011

The questions of the design of integrated circuits of an equalizer based on heterojunction silicon-germanium transistors are considered. High speed tuned blocks of the equalizers are a features of the device. The computer modeling and experimental studies of the devices for signal transfer at a rate of 12.5 Gbit/s are performed. The experimental results concur well with the results of modeling. © Pleiades Publishing, Ltd., 2011.

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