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Bannaya V.F.,Moscow State Humanitarian University
Semiconductors | Year: 2014

Methods for estimating the compensating-impurity concentration from the segment of curves corresponding to temperatures T > 50 K are suggested based on analysis of the results of measurements of the Hall constant and mobility in a broad temperature range for Hg-doped Ge samples. It is concluded that local Hg inclusions in the sample matrix are ionized in this temperature range and both methods are applicable irrespective of the chemical nature of the impurity. © 2014, Pleiades Publishing, Ltd.

Koplak O.V.,RAS Institute of Problems of Chemical Physics | Shteynman E.A.,RAS Institute of Solid State Physics | Tereschenko A.N.,RAS Institute of Solid State Physics | Morgunov R.B.,Moscow State Humanitarian University
Semiconductors | Year: 2015

A correlation between the temperature dependences of the D1-line intensity of dislocation luminescence and the magnetic moment of plastically deformed isotopically enriched crystals 29Si:B is found. It is established that the magnetic susceptibility of the deformed crystals obtained by integration of the spectra of electron spin resonance and the D1-line intensity undergo similar nonmonotonic variations with temperature varying in the range of 20–32 K. © 2015, Pleiades Publishing, Ltd.

Bannaya V.F.,Moscow State Humanitarian University
Semiconductors | Year: 2015

The results of studying the heating of charge carriers by an electric field in nominally undoped Ge (with impurity concentrations of (Na + Ng) ≤ 5 × 1013 cm–3) subjected to interband illumination are reported. It is necessary in this situation to take into account two types of free charge carriers. In the case of such generation, the relation between the concentrations of electrons and holes depends to a large extent on the value of the electric field since this field differently affects the recombination coefficients of charge carriers and gives rise to new effects. The results of experimental studies of the conductivity σ and the Hall constant RH in n-Ge and p-Ge at T = 4.2 K and at different intensities of intrinsic photoexcitation are reported. A model of interband recombination, which takes into account deep-level impurity centers, is suggested for explanation of the results. © 2015, Pleiades Publishing, Ltd.

Petrov V.F.,LC Works | Petrov V.F.,Gubkin Russian State University of Oil and Gas | Yashkichev V.I.,Moscow State Humanitarian University
Molecular Crystals and Liquid Crystals | Year: 2010

The effect on the physico-chemical properties of introducing the oxygen atom into the molecular structure of liquid crystals is discussed and rationalized in terms of existent theories; a comparison is made with the corresponding hydrocarbon and other derivatives.

Zhilavskaya I.V.,Moscow State Humanitarian University
Life Science Journal | Year: 2013

In article for the first time media education is taken up as a branch of activity which at a stage of the formation acquires the traits of branch of the spiritual production revealing in an institutionalization, professionalizings, technologization and socialization of media educational processes. Media education as a field of activity remarkable for specific organization of production, special technologies and also unique type of made production: the media literate personality and media literate society. High quality of this "product" provides media safety guarantees as individual, and society as a whole.

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