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News Article | November 7, 2016
Site: www.marketwired.com

MUNICH, GERMANY--(Marketwired - November 07, 2016) - KEMET Corporation ( : KEM), a leading global supplier of electronic components, continued its leadership position in digital technology by announcing expansions to its repertoire of powerful electronic components tools. "KEMET is involved in the customer journey from idea to execution, and our commitment to unparalleled borderless service extends through our advanced digital tools," said Per Loof, KEMET Chief Executive Officer. "As our customers move from concept, to part selection, to manufacturing, KEMET is there with convenient, virtual support via high performance online and mobile applications." 3D STEP files for CAD modeling are now offered via the new ComponentEdge search tool for most KEMET capacitor part numbers. The detailed mechanical data found in KEMET's product datasheets is available in 3D STEP files for all surface mount aluminum, ceramic and tantalum components, as well as radial through-hole film capacitors, and can be obtained via download with a single click. Building on the success of KEMET's iPad® and Android™ apps, the company introduced its support for iPhone® and Windows® platforms. Convenient access to over 400 capacitor and electronic component product datasheets and the ability to easily navigate by product type or search by keyword are just a few benefits of KEMET's mobile apps. Publications are stored locally, providing fast access without the need for continuous Wi-Fi or cellular connectivity. The app notifies users when datasheet updates are available and provides automatic downloads, eliminating concerns over outdated product information. Included in the app is complete access to KEMET's ComponentEdge, the industry's most advanced part finder. ComponentEdge enables users to search and filter over 6.4 million KEMET parts -- the most extensive parts database available today. Simply enter descriptive text, the KEMET part number, partial part number, competitive part number or browse and filter by electrical/physical characteristics. Additionally, the app features access to Engineering Center, KEMET's online education resource providing practical answers to questions involving passive components in electronic applications, as well as K-SIM, a parameter simulation tool that aids design engineers in analyzing capacitor performance over a variety of conditions. In the past year alone, K-SIM generated 100,000 plots (over 270 per day), which demonstrates its usefulness to engineers. The KEMET app is available free of charge on the App Store℠, Google Play™ and Windows Store. For more information or links, please visit www.kemet.com/mobileapps. KEMET and Modelithics, Inc. announced a partnership to provide highly accurate measurement-based simulation models for the entire KEMET CBR RF Capacitor series. These models are now available in industry-leading simulation tools including Keysight ADS, Keysight Genesys, NI AWR Design Environment, ANSYS HFSS and Sonnet Suites. KEMET is sponsoring complimentary 30-day licenses for use of all KEMET capacitor models in the Modelithics library. For more information, please visit www.modelithics.com/MVP/KEMET. KEMET Corporation is a leading global manufacturer of electronic components that meet the highest standards for quality, delivery and service. The company offers its customers the broadest selection of capacitor technologies in the industry across all dielectrics, along with an expanding range of electromechanical devices, electromagnetic compatibility solutions and supercapacitors. KEMET's corporate headquarters are in South Carolina; the company also operates manufacturing facilities, sales and distribution centers around the world. KEMET's common stock is listed on the NYSE under the symbol "KEM." Additional information about KEMET can be found at www.kemet.com. Certain statements included herein contain forward-looking statements within the meaning of federal securities laws about KEMET Corporation's (the "Company") financial condition and results of operations that are based on management's current expectations, estimates and projections about the markets in which the Company operates, as well as management's beliefs and assumptions. Words such as "expects," "anticipates," "believes," "estimates," variations of such words and other similar expressions are intended to identify such forward-looking statements. These statements are not guarantees of future performance and involve certain risks, uncertainties and assumptions, which are difficult to predict. Therefore, actual outcomes and results may differ materially from what is expressed or forecasted in, or implied by, such forward-looking statements. Readers are cautioned not to place undue reliance on these forward-looking statements, which reflect management's judgment only as of the date hereof. The Company undertakes no obligation to update publicly any of these forward-looking statements to reflect new information, future events or otherwise. Certain risks and uncertainties that could cause actual outcome and results to differ materially from those expressed in, or implied by, these forward-looking statements are described in the Company's reports and filings with the Securities and Exchange Commission.


Pereira A.,Macquarie University | Parker A.,Macquarie University | Heimlich M.,Macquarie University | Weste N.,Macquarie University | Dunleavy L.,Modelithics
PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications | Year: 2014

GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate and very high transition frequencies of GaN High Electron Mobility Transistors (HEMTs). This paper explores the use of RF GaN HEMTs as power switches in integrated supply modulator topologies. Devices were characterized for power switching and a simple figure of merit was calculated to understand the device performance in terms of its ON resistance and input capacitance. © 2014 IEEE.


Dunleavy L.,Modelithics
IEEE Microwave Magazine | Year: 2014

The IMS2014 Conference will be held in Tampa, Florida, at the waterfront Convention Center during the week of June 16, 2014. This is the first IMS to be held in Tampa, Florida. The last conference held in the Sunshine State was in Orlando in 1995. The conference theme 'Powering the Waves' is inspired by two things. One is the fact that it is precisely the MTT-S members and all those that frequent the IMS who truly power the technology that enables microwaves in all of the many related applications and embodiments. One is the fact that it is precisely the MTT-S members and all those that frequent the IMS who truly power the technology that enables microwaves in all of the many related applications and embodiments. The other inspiration will be obvious when visitors and participants stand on the dock near the convention center, drive past some of the bays, or if they get a chance to visit the beaches or lakes.


Delgado I.,Modelithics | Skidmore S.,Modelithics | Dunleavy L.,Modelithics
2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 | Year: 2015

Combining high accuracy parasitic models with accurate electromagnetic (EM) analysis is not necessarily straightforward. Modelithics Global Models, which account for many different parasitic and substrate related effects, and NI AWR Design Environment/AXIEM EM analysis tool have been developed independently with the same goal of increasing designer success. This work outlines a best-practice procedure for using these tools together. In addition, a comparison of simulated to measured data for an example filter will be covered. The data shows that good results can be achieved within a circuit simulation, by using parasitic models combined with built-in transmission line elements; however, even better results are achieved by adding an EM analysis of all the interconnect effects. © 2015 IEEE.


Kellogg K.,Modelithics | Liu J.,Modelithics | Dunleavy L.,Modelithics
2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 | Year: 2015

Single-tone X-parameters-based models are time-invariant non-linear mappings, where the output is a multi-harmonic vector mapping of the incident and scattered waves under periodic steady-state conditions. An envelope simulation combines aspects of both the frequency and time domains, where the input waveforms may be represented as discrete carriers in the frequency domain and the modulation envelopes as time-variant waveforms. X-parameter models are evaluated for their swept frequency and power intermodulation distortion (IMD) and the corresponding output third-order intercept point (OIP3) simulation accuracy. Model performance for an example surface mount amplifier is evaluated for both the cases of extrapolated power levels and those where the power level lies within the model boundaries. It is shown that a single-tone static X-parameter model is capable of predicting the swept IMD performance of the device given reasonable power limit model boundaries and a DUT subject to negligible device memory effects. © 2015 IEEE.


Dunleavy L.,Modelithics
2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015 | Year: 2015

An overview is provided of a range of linear and non-linear system level component models with novel features that enable efficient RF front-end design and optimizations. Described are scalable attenuator and LTCC filter models as well as X-parameters-based amplifier models that account for noise and nonlinearities as well as accurate S-parameter predictions. The substrate-scalable LTCC filter and attenuator models can be used to evaluate board-dependent performance to specification as well as compensate for non-ideal board and solder pad effects to achieve a good impedance match on a non-optimal board choice. Several simulation examples are provided to demonstrate how the models can be used individually or in combination for board-based RF sub-system design evaluation and optimization. Included is an RF front-end example that integrates several different system level component models for exploration of system level behaviors. © 2015 IEEE.


Dunleavy L.,Modelithics | Dunleavy L.,University of South Florida | Baylis C.,Baylor University | Curtice W.,W.R. Curtice Consulting | Connick R.,TriQuint Semiconductor
IEEE Microwave Magazine | Year: 2010

Gallium nitride transistor-based power amplifiers (PA) which are currently among the most important technologies impacting high-power transmitter design at microwave frequencies are discussed. GaN HEMTs also allow high-power operation at much higher frequencies than silicon laterally diffused metal oxide semiconductor field-effect transistors (LDMOS FETs), currently a staple for the cellular base station industry. The significant attention placed on nonlinear models is in step with the growing community of designers who are using nonlinear circuit simulators with good success to design and optimize high-power amplifiers. The use of pulsed measurements as part of the modeling process, along with sufficiently flexible modeling equations and topologies, is critical for obtaining reliable electrothermal GaN models. The successful modeler will be aware of the need for accurate data, carefully applied extraction methodologies, along with the strengths and limitations of available models to obtain the best results for circuit designers.


Golio M.,Golio Endeavors | Dunleavy L.,Modelithics | Gneiting T.,AdMOS GmbH in Frickenhausen
2015 IEEE MTT-S International Microwave Symposium, IMS 2015 | Year: 2015

An up-to-date summary of relevant large signal (LS) or nonlinear models for power amplifier design is provided, covering a wide range of device types, along with a brief history for the various categories of models. Addressed are compact LS models for III-V as well as silicon FETs and bipolar transistors that are suitable for power amplifier design, utilizing a range of technologies including GaN, GaAs, SiGe and CMOS. Behavioral LS models are considered along with trade-offs that often exist as compared to compact models. Important developments of related technologies that have had significant impact on large signal modeling such as automated small and large signal network analyzers, wafer probe capability, and harmonic balance simulator software are also discussed. © 2015 IEEE.


Grant
Agency: NSF | Branch: Standard Grant | Program: | Phase: | Award Amount: 139.84K | Year: 2010

This Small Business Innovation Research (SBIR) Phase I project will investigate a new class of chip-scale instrumentation for microwave and mm-wave device characterization. The primary elements of the proposed instruments are silicon integrated circuits for signal generation and detection, and advanced passive circuits to provide reconfigurable signal routing and conditioning. The instruments will utilize system-in-package (SIP) technology. The goal is to realize custom chip-level instruments as alternatives to conventional bench-top laboratory instruments, with significant advantages in terms of cost and versatility. In this project novel chip-scale microwave/mm-wave systems will be investigated as a disruptive technology in the test and measurement industry. The research objectives include the development appropriate silicon IC designs, RF MEMS signal conditioning circuits and a proof-of-concept packaging scheme for a miniature 20 GHz vector network analyzer. The IC and signal conditioning circuit designs will be based on existing technology developed at the University of Florida and the University of South Florida, and adapted for this specific application. It is anticipated that a preliminary functional prototype, utilizing a new packaging scheme and existing chip architectures, will be demonstrated by the end of this Phase I project.

The broader impact/commercial potential of this project will revolutionize microwave test. Todays microwave test instruments are typically rack-mounted, interfaced to devices under test through cables and some form of fixture (e.g. on-wafer probes) and to computers for data acquisition. The proposed chip-scale instruments have the potential to transform the microwave/mm-wave test industry, particularly in production line or maintenance operations where application-specific designs would offer dramatically lower cost in comparison to expensive, laboratory-type instruments that are currently the only available option. For characterization into the mm-wave frequencies the chip-scale instruments may outperform traditional instruments, since measurements can be performed immediately next to the device thereby eliminating much of the noise and loss induced by cables and other interconnects. The chip-scale instrument concept can be extended to enable mobile monitoring through battery-powered wireless telemetry, opening up many new potential applications in the automotive and biomedical device (sensor) industries, among others. With the appropriate circuit designs the measurement capabilities could include impedance, network (scattering) parameters, noise, spectrum and linearity. Potential societal benefits include a significant reduction in the cost of performing characterization that is critical to new technology development, and enabling new technologies where instrumentation cost represents a barrier to entry.


Grant
Agency: National Science Foundation | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 139.84K | Year: 2010

This Small Business Innovation Research (SBIR) Phase I project will investigate a new class of chip-scale instrumentation for microwave and mm-wave device characterization. The primary elements of the proposed instruments are silicon integrated circuits for signal generation and detection, and advanced passive circuits to provide reconfigurable signal routing and conditioning. The instruments will utilize system-in-package (SIP) technology. The goal is to realize custom chip-level instruments as alternatives to conventional bench-top laboratory instruments, with significant advantages in terms of cost and versatility. In this project novel chip-scale microwave/mm-wave systems will be investigated as a disruptive technology in the test and measurement industry. The research objectives include the development appropriate silicon IC designs, RF MEMS signal conditioning circuits and a proof-of-concept packaging scheme for a miniature 20 GHz vector network analyzer. The IC and signal conditioning circuit designs will be based on existing technology developed at the University of Florida and the University of South Florida, and adapted for this specific application. It is anticipated that a preliminary functional prototype, utilizing a new packaging scheme and existing chip architectures, will be demonstrated by the end of this Phase I project. The broader impact/commercial potential of this project will revolutionize microwave test. Today's microwave test instruments are typically rack-mounted, interfaced to devices under test through cables and some form of fixture (e.g. on-wafer probes) and to computers for data acquisition. The proposed chip-scale instruments have the potential to transform the microwave/mm-wave test industry, particularly in production line or maintenance operations where application-specific designs would offer dramatically lower cost in comparison to expensive, laboratory-type instruments that are currently the only available option. For characterization into the mm-wave frequencies the chip-scale instruments may outperform traditional instruments, since measurements can be performed immediately next to the device thereby eliminating much of the noise and loss induced by cables and other interconnects. The chip-scale instrument concept can be extended to enable mobile monitoring through battery-powered wireless telemetry, opening up many new potential applications in the automotive and biomedical device (sensor) industries, among others. With the appropriate circuit designs the measurement capabilities could include impedance, network (scattering) parameters, noise, spectrum and linearity. Potential societal benefits include a significant reduction in the cost of performing characterization that is critical to new technology development, and enabling new technologies where instrumentation cost represents a barrier to entry.

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