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Dunleavy L.,Modelithics
IEEE Microwave Magazine

The IMS2014 Conference will be held in Tampa, Florida, at the waterfront Convention Center during the week of June 16, 2014. This is the first IMS to be held in Tampa, Florida. The last conference held in the Sunshine State was in Orlando in 1995. The conference theme 'Powering the Waves' is inspired by two things. One is the fact that it is precisely the MTT-S members and all those that frequent the IMS who truly power the technology that enables microwaves in all of the many related applications and embodiments. One is the fact that it is precisely the MTT-S members and all those that frequent the IMS who truly power the technology that enables microwaves in all of the many related applications and embodiments. The other inspiration will be obvious when visitors and participants stand on the dock near the convention center, drive past some of the bays, or if they get a chance to visit the beaches or lakes. Source

Pereira A.,Macquarie University | Parker A.,Macquarie University | Heimlich M.,Macquarie University | Weste N.,Macquarie University | Dunleavy L.,Modelithics
PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications

GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate and very high transition frequencies of GaN High Electron Mobility Transistors (HEMTs). This paper explores the use of RF GaN HEMTs as power switches in integrated supply modulator topologies. Devices were characterized for power switching and a simple figure of merit was calculated to understand the device performance in terms of its ON resistance and input capacitance. © 2014 IEEE. Source

Dunleavy L.,Modelithics | Dunleavy L.,University of South Florida | Baylis C.,Baylor University | Curtice W.,W.R. Curtice Consulting | Connick R.,TriQuint Semiconductor
IEEE Microwave Magazine

Gallium nitride transistor-based power amplifiers (PA) which are currently among the most important technologies impacting high-power transmitter design at microwave frequencies are discussed. GaN HEMTs also allow high-power operation at much higher frequencies than silicon laterally diffused metal oxide semiconductor field-effect transistors (LDMOS FETs), currently a staple for the cellular base station industry. The significant attention placed on nonlinear models is in step with the growing community of designers who are using nonlinear circuit simulators with good success to design and optimize high-power amplifiers. The use of pulsed measurements as part of the modeling process, along with sufficiently flexible modeling equations and topologies, is critical for obtaining reliable electrothermal GaN models. The successful modeler will be aware of the need for accurate data, carefully applied extraction methodologies, along with the strengths and limitations of available models to obtain the best results for circuit designers. Source

Dunleavy L.,Modelithics
2015 IEEE 16th Annual Wireless and Microwave Technology Conference, WAMICON 2015

An overview is provided of a range of linear and non-linear system level component models with novel features that enable efficient RF front-end design and optimizations. Described are scalable attenuator and LTCC filter models as well as X-parameters-based amplifier models that account for noise and nonlinearities as well as accurate S-parameter predictions. The substrate-scalable LTCC filter and attenuator models can be used to evaluate board-dependent performance to specification as well as compensate for non-ideal board and solder pad effects to achieve a good impedance match on a non-optimal board choice. Several simulation examples are provided to demonstrate how the models can be used individually or in combination for board-based RF sub-system design evaluation and optimization. Included is an RF front-end example that integrates several different system level component models for exploration of system level behaviors. © 2015 IEEE. Source

Golio M.,Golio Endeavors | Dunleavy L.,Modelithics | Gneiting T.,AdMOS GmbH in Frickenhausen
2015 IEEE MTT-S International Microwave Symposium, IMS 2015

An up-to-date summary of relevant large signal (LS) or nonlinear models for power amplifier design is provided, covering a wide range of device types, along with a brief history for the various categories of models. Addressed are compact LS models for III-V as well as silicon FETs and bipolar transistors that are suitable for power amplifier design, utilizing a range of technologies including GaN, GaAs, SiGe and CMOS. Behavioral LS models are considered along with trade-offs that often exist as compared to compact models. Important developments of related technologies that have had significant impact on large signal modeling such as automated small and large signal network analyzers, wafer probe capability, and harmonic balance simulator software are also discussed. © 2015 IEEE. Source

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