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Yongin, South Korea

An anode active material for a secondary battery includes an amount of a first element group in a range of about 0 at % (atomic percent) to about 30 at %, an amount of a second element group in a range of about 0 at % to about 20 at %, a balance of silicon and other unavoidable impurities. The first element group may include copper (Cu), iron (Fe), or a mixture thereof, and the second element group may include titanium (Ti), nickel (Ni), manganese (Mn), aluminum (Al), chromium (Cr), cobalt (Co), zinc (Zn), boron (B), beryllium (Be), molybdenum (Mo), tantalum (Ta), sodium (Na), strontium (Sr), phosphorous (P) or mixtures thereof.


An anode active material for a lithium secondary battery having high-capacity and high-efficient charge/discharge characteristics. The anode active material includes silicon single phases; and silicon-metal alloy phases surrounding the silicon single phases. A dopant is distributed in the anode active material, and the silicon single phases are formed through rapid-cooling solidification, and the silicon single phases have a fine microstructure due to the dopant.


An anode active material for a lithium secondary battery having high-capacity and high-efficient charging/discharging characteristics. The anode active material includes silicon single phases, and silicon-metal alloy phases distributed around the silicon single phases. The silicon single phases have a fine structure in which crystalline particles obtained through rapid-cooling solidification are thermally treated to be grown to crystal grains.


Patent
MK Electronic CO., Hoseo University, Korea Electronics Technology Institute, Korea Institute of Industrial Technology, Korea Advanced Institute of Science and Technology | Date: 2014-12-02

Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.


Patent
MK Electronic Co. | Date: 2014-08-29

Provided is a metal ball fabricating apparatus for fabricating a metal ball by melting a material. The metal ball fabricating apparatus includes: a fabricating unit configured to fabricate a metal ball; and a collecting unit configured to collect the metal ball. The fabricating unit includes: a chamber configured to receive and store a material; a heating unit configured to apply heat to melt the material in the chamber; an orifice disposed at a lower portion of the chamber to which a metal ball droplet drops; a piston disposed over the orifice to generate a metal ball droplet; and a purifying system configured to remove a foreign substance from the material.

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