Miteq Inc.

Hauppauge, NY, United States

Miteq Inc.

Hauppauge, NY, United States
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Eron M.,Miteq Inc. | Lin S.,Miteq Inc. | Wang D.,Newport Corporation | Schroter M.,Newport Corporation | Kempf P.,Newport Corporation
Electronics Letters | Year: 2011

The first carbon nanotube transistor (CNT)-based single-stage L-band RF amplifier has been designed, built and characterised. The on-wafer probe measured data was used to design a single-stage discrete feedback amplifier with a CN FET die. The amplifier achieved 11dB linear gain with better than 10dB input/output return loss at 1.3GHz. The measurement results match well with the simulation. © 2011 The Institution of Engineering and Technology.


Al-Dahleh R.,Miteq Inc. | Mansour R.R.,University of Waterloo
Journal of Microelectromechanical Systems | Year: 2010

This paper presents a detailed analysis of the design, fabrication, and testing of a high-isolation electrostatically actuated capacitive shunt switch for X-band applications. The dual-warped-beam switch's RF performance is fine-tuned simultaneously in the off and on states by introducing warped bimetallic beams to the switch's edge to increase the effective capacitive area in the downstate and to the switch's center to decrease the effective capacitive area in the upstate. As a result, the dual-warped-beam switches demonstrate an off-to-on capacitive ratio of up to 170 without the need for thin dielectrics or high dielectric constant materials, exhibiting excellent RF performance. High isolation at X-band of less than 40 dB is also obtained with the introduction of inductive meandered springs into the switch structure. This novel tuning design mechanism for capacitive switches utilizing warped bimetallic beams has the advantage of simplicity and flexibility without the added complexity of using thinner dielectrics, tuned circuits, or larger size. © 2010 IEEE.


Hausman L.,Miteq Inc. | Oliva L.,Miteq Inc.
81st ARFTG Microwave Measurement Conference: Metrology for High Speed Circuits and Systems, ARFTG 2013 | Year: 2013

Vector Network Analysis can be applied to equipment where the input and output ports are spatially disparate and not easily connected to conventional network analyzer equipment by adding a fiber optic transmitter and a fiber optic receiver connected by fiber optic cable. Due to the very low distortion of fiber optic cable, long lengths of this cable may be used to perform measurements without introducing significant measurements distortions. Calibration must be performed to remove the effects of the fiber optic transmitter and receiver equipment. © 2013 IEEE.


Lin S.,Miteq Inc. | Fathy A.E.,University of Tenn
2011 IEEE 12th Annual Wireless and Microwave Technology Conference, WAMICON 2011 | Year: 2011

A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 20 W output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 11 ferrite loaded balun and low pass filters are utilized on the amplifier's output side instead of the conventional serial harmonic termination. © 2011 IEEE.


Lin S.,Miteq Inc. | Eron M.,Miteq Inc. | Turner S.,Miteq Inc.
2011 IEEE 12th Annual Wireless and Microwave Technology Conference, WAMICON 2011 | Year: 2011

Two types of broadband amplifier based on GaN HEMTs are presented in this paper. The feedback amplifier design has achieved over 42 dB gain with 1.75 dB flatness and higher than 32 dBm P1dB over 30 MHz to 4 GHz. Both theoretical predictions and measurement results will be presented. This PA was designed and fabricated using discrete GaN transistor die with chip & wire technology. The distributed amplifier design is optimized to achieve greater than 38 dBm of P1dB output power with higher than 15 dB linear gain, while having good port match and better than 1 dB gain flatness over 20 MHz to 6 GHz. © 2011 IEEE.


Hausman H.,Miteq Inc.
Proceedings - 2012 IEEE 1st AESS European Conference on Satellite Telecommunications, ESTEL 2012 | Year: 2012

Acquiring a power amplifier is one of the most critical decisions in designing a communication system. The power amplifier is the largest consumer of power, the hottest component, the least reliable, one of the most expensive parts and many times the largest major part of the system. All of these factors relate in various proportions to the output power required, making this parameter critical in designing a successful communication link. However, amplifier manufacturers do not specify useable power defined by the system linearity requirements. It is necessary to relate these requirements to the available manufacturer's data in determining the optimum matching product. This paper is intended to explain the systems requirements and the HPA characteristics that effect the system requirements to aid the design engineer in optimizing the link performance.


Lin S.,Miteq Inc. | Eron M.,Miteq Inc. | Turner S.,Miteq Inc. | Sepulveda J.,Miteq Inc.
Electronics Letters | Year: 2011

A novel K/Ka band directional coupler with low insertion loss over a wideband is proposed. The design combines the advantages of suspended stripline (SS) and microstrip line (MS). This novel directional coupler is suitable for high output power detection and can be seamlessly integrated with low-loss SS power combiners and MS circuits. The measured insertion loss is less than 0.2dB, coupling is within 20.5-22dB with more than 15dB directivity, and return loss of all ports is better than 15dB over 20-30GHz. © 2011 The Institution of Engineering and Technology.


Lin S.,Miteq Inc. | Eron M.,Miteq Inc.
IEEE Microwave and Wireless Components Letters | Year: 2011

A novel ultra-wideband suspended stripline to shielded microstrip transition is presented here with measurement results. The novel transition has less than 0.2 dB insertion loss and better than 15 dB return loss over dc to 40 GHz. This transition design addresses the interconnection challenge between suspended stripline and shielded microstrip circuits, such as in assemblies where the active circuitry is in MS environment, and the passive circuitry is in low-loss SS environment. The described design allows for less critical mechanical tolerance and is less sensitive to misalignment. © 2006 IEEE.


Hausman B.H.,Miteq Inc.
2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 | Year: 2011

Microwave mixers are non-linear devices that are used to translate one segment of the frequency spectrum to another portion of the frequency spectrum without distorting the signals in the respective segment. Undistorted frequency translation, a key factor in designing most complex microwave systems, has improved over the years with the advent of balanced, double balanced, and triple balanced mixers but is still elusive because they do not adequately address the mixer as a matched building block in the system design. This paper describes a mixer configuration that not only utilizes the most advanced techniques of linear frequency translation but in addition improves the VSWR on all signal ports to enhance the predictability and performance in an actual system environment. A theoretical analysis of this technique is presented along with actual data verifying the expected improvements. © 2011 IEEE.


Lin S.,Miteq Inc. | Eron M.,Miteq Inc.
2010 IEEE Radio and Wireless Symposium, RWW 2010 - Paper Digest | Year: 2010

A three-stage power amplifier will be described which was designed for 5W or better power over many octaves. A mixed topology was chosen to obtain the best bandwidth and power. First two stages are single-ended feedback designs for best gain and linear drive for the output. The last stage is a distributed PA, which is optimized to achieve high output power and high drain efficiency. The PA is designed and fabricated using discrete 2W GaN transistor die in all stages in a mixed hybrid and softboard medium. The design was fully simulated. Both measurement results and the theoretical predictions will be presented. This GaN PA has over 43 dB linear gain with good port match and it provides greater than 37 dBm of saturated power and over 20% PAE in the 0.02 to 3 GHz frequency range. © 2010 IEEE.

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