Al-Dahleh R.,Miteq Inc. |
Mansour R.R.,University of Waterloo
Journal of Microelectromechanical Systems | Year: 2010
This paper presents a detailed analysis of the design, fabrication, and testing of a high-isolation electrostatically actuated capacitive shunt switch for X-band applications. The dual-warped-beam switch's RF performance is fine-tuned simultaneously in the off and on states by introducing warped bimetallic beams to the switch's edge to increase the effective capacitive area in the downstate and to the switch's center to decrease the effective capacitive area in the upstate. As a result, the dual-warped-beam switches demonstrate an off-to-on capacitive ratio of up to 170 without the need for thin dielectrics or high dielectric constant materials, exhibiting excellent RF performance. High isolation at X-band of less than 40 dB is also obtained with the introduction of inductive meandered springs into the switch structure. This novel tuning design mechanism for capacitive switches utilizing warped bimetallic beams has the advantage of simplicity and flexibility without the added complexity of using thinner dielectrics, tuned circuits, or larger size. © 2010 IEEE. Source
Hausman H.,Miteq Inc.
Proceedings - 2012 IEEE 1st AESS European Conference on Satellite Telecommunications, ESTEL 2012 | Year: 2012
Acquiring a power amplifier is one of the most critical decisions in designing a communication system. The power amplifier is the largest consumer of power, the hottest component, the least reliable, one of the most expensive parts and many times the largest major part of the system. All of these factors relate in various proportions to the output power required, making this parameter critical in designing a successful communication link. However, amplifier manufacturers do not specify useable power defined by the system linearity requirements. It is necessary to relate these requirements to the available manufacturer's data in determining the optimum matching product. This paper is intended to explain the systems requirements and the HPA characteristics that effect the system requirements to aid the design engineer in optimizing the link performance. Source
Lin S.,Miteq Inc. |
Fathy A.E.,University of Tenn
2011 IEEE 12th Annual Wireless and Microwave Technology Conference, WAMICON 2011 | Year: 2011
A 50 to 550 MHz wideband gallium nitride (GaN) HEMT power amplifier with over 20 W output power and 63% drain efficiency has been successfully developed. The demonstrated wideband power amplifier utilizes two GaN HEMTs and operates in a push-pull voltage mode Class D (VMCD). The design is based on a large signal simulation to optimize the power amplifier's output power and efficiency. To assure a wideband operation, a coaxial line impedance transformer has been used as part of the input matching network; meanwhile, a wideband a 11 ferrite loaded balun and low pass filters are utilized on the amplifier's output side instead of the conventional serial harmonic termination. © 2011 IEEE. Source
Hausman B.H.,Miteq Inc.
2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 | Year: 2011
Microwave mixers are non-linear devices that are used to translate one segment of the frequency spectrum to another portion of the frequency spectrum without distorting the signals in the respective segment. Undistorted frequency translation, a key factor in designing most complex microwave systems, has improved over the years with the advent of balanced, double balanced, and triple balanced mixers but is still elusive because they do not adequately address the mixer as a matched building block in the system design. This paper describes a mixer configuration that not only utilizes the most advanced techniques of linear frequency translation but in addition improves the VSWR on all signal ports to enhance the predictability and performance in an actual system environment. A theoretical analysis of this technique is presented along with actual data verifying the expected improvements. © 2011 IEEE. Source
Miteq Inc. | Date: 2007-11-13
RF, CW and pulse amplifier cavities and CW pulse oscillator cavities.