Ministry of Communications and Information Technology

Bhubaneshwar, India

Ministry of Communications and Information Technology

Bhubaneshwar, India
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Josang A.,University of Oslo | Varmedal K.A.,University of Oslo | Rosenberger C.,ENSICAEN | Kumar R.,Ministry of Communications and Information Technology
2012 10th Annual International Conference on Privacy, Security and Trust, PST 2012 | Year: 2012

The concept of authentication assurance traditionally refers to the robustness of methods and mechanisms for user authentication, including the robustness of initial registration and provisioning of user credentials, as well as the robustness of mechanisms that enforce user authentication during operation. However, the user is not the only party that needs to be authenticated to ensure security of online transactions. In fact, online service provision always involves two parties, typically the user on the client side and the service provider on the server side, so that mutual authentication between the two sides is required. In contrast to the unilateral focus on user authentication by industry and academia, it is in fact equally important for the user to correctly authenticate the service provider. Unfortunately, little attention is paid to the problem of correctly authentication the service provider. This paper proposes a framework for server and service provider authentication assurance, similarly to frameworks for user authentication assurance that have already been specified, or are currently under development by many national governments. © 2012 IEEE.

Belachew M.,Ministry of Communications and Information Technology | Shyamasundar R.K.,Tata Institute of Fundamental Research
ACM International Conference Proceeding Series | Year: 2013

Public Private Partnerships (PPP) as a model is an efficient formula to implement public services by forming collaboration between private partners and the government. PPPs are complex legal arrangements designed to share the control, risks and rewards of a set of specific investments among private partners and a government sector. In most PPP models, the assets are legally owned and used by the private partner to produce a specified category of services for specific period, and then the government gains operational control and legal ownership of the investment, often without payment. Applying the PPP in the EGovernment projects helps to achieve the objectives of egovernment by effectively planning and implementing the project. In this paper, we shall address the governance part of PPP in implementing E-Government initiatives. The main aim is to explore ways in which an effective governance structure can be realized through PPP and make e-government service delivery successful based upon our practical evaluations in this direction. Copyright © 2013 by the Association for Computing Machinery, Inc.

Lessa L.,Addis Ababa Institute of Technology | Negash S.,Kennesaw State University | Belachew M.,Ministry of Communications and Information Technology
18th Americas Conference on Information Systems 2012, AMCIS 2012 | Year: 2012

E-Government implementation failure in low-income countries is reported to be as high as 85% where 35% being classified as total failures, the project never started or was started but immediately abandoned, and 50% are partial failures, major project goals are not attained or there were undesirable outcomes (Heeks, 2003). Given this rate of failure we wanted to investigate a successful project and draw lessons learned that can be replicated in other projects. We use Design-Reality gap model as a theoretical framework to assess the project status. Primary data were collected from four different groups involved in the project. Our analysis shows lower gaps in 'process'; 'management systems and structures' dimensions; and higher gaps in 'information', 'technology', 'staffing and skills', 'objectives and values', and 'other resources' dimensions. Based on the implementation experiences of this project, list of recommendations are provided for successful execution of possible related initiatives in the future. © (2012) by the AIS/ICIS Administrative Office All rights reserved.

Shankar B.,Indian Central Electronics Engineering Research Institute | Shankar B.,Birla Institute of Technology and Science | Gupta S.K.,Ministry of Communications and Information Technology | Taube W.R.,Indian Central Electronics Engineering Research Institute | Akhtar J.,Indian Central Electronics Engineering Research Institute
International Journal of Electronics | Year: 2016

This paper develops a deep insight into the behaviour of high-k dielectric-based field plate on Ni/4H-SiC Schottky diode. It tries to explain the mechanism by which high-k materials outperform silicon dioxide, when used under the field plate. Phenomena like modulation of field enhancement factor, reshaping of equipotential contours and expansion of depletion region while maintaining fixed depletion ratio (length/width = 2.3) helps to understand the electrical behaviour of high-k dielectric-based field plate. High-k materials relaxed the equipotential contours under the field plate edge which resulted in electric field reduction up to 88% and significant drop from 6.6 to 2.2 in field enhancement factor at device edges. The study considers the field plate of different dielectrics (SiO2, Si3N4, Al203, HfO2) and in each case, analytically explores the optimisation of field plate parameters (overlap length and dielectric thickness, dielectric constant). All the investigations have been done using numerical simulations on calibrated setup. © 2016 Informa UK Limited, trading as Taylor & Francis Group

Chander N.,Indian Institute of Technology Delhi | Singh P.,Indian Institute of Technology Delhi | Khan A.F.,Ministry of Communications and Information Technology | Dutta V.,Indian Institute of Technology Delhi | Komarala V.K.,Indian Institute of Technology Delhi
Thin Solid Films | Year: 2014

A facile method for fabricating large area TiO2 and TiO2-Au nanocomposite films for dye sensitized solar cells (DSSCs) is presented using a spray technique. Pre-synthesized gold nanoparticles (Au NPs)were sprayed together with the TiO2 NPs and composite films with brilliant coloration due to surface plasmon resonances of Au NPs were prepared. Composite films containing ~15 nm sized Au NPs exhibited enhanced absorption in the visible region of the electromagnetic spectrum. DSSCs with a large area of ~4.5 cm2 were fabricated and a photocurrent enhancement of 10% was obtained for plasmonic DSSC containing 0.3 wt.% of ~15 nm Au NPs. Incident photon to current conversion efficiency data conclusively showed enhanced currents in the visible region of the polychromatic spectrum arising due to plasmon enhanced near-field effects of Au NPs around the absorbing dye molecules. © 2013 Elsevier B.V. All rights reserved.

Garaje S.N.,MET Tech | Apte S.K.,MET Tech | Kumar G.,Tennessee Technological University | Panmand R.P.,MET Tech | And 4 more authors.
Materials Research Bulletin | Year: 2013

Herein, we report the synthesis of ferric oxide embedded low melting phosphate glass nanocomposite and also the effect of ferric oxide nanoparticles content on the optical and magneto-optical properties of the glasses. The optical study clearly showed red shift in optical cut off with increasing ferric oxide concentration. The band gap of the host glass was observed to be 3.48 eV and it shifted to 3.14 eV after doping with ferric oxide. The glasses doped with 0.25 and 2% ferric oxide showed particle size of 4-6 nm and 8-12 nm, respectively. Faraday rotation of the glass nanocomposites was measured and showed variation in the Verdet constant as per increasing concentration of ferric oxide. Interestingly, the host glass itself showed fairly good Verdet constant (11.5°/T cm) and threefold enhancement was observed in the Verdet constant of ferric oxide quantum dot-glass nanocomposite. © 2012 Elsevier Ltd.

Chander N.,Indian Institute of Technology Delhi | Khan A.F.,Ministry of Communications and Information Technology | Komarala V.K.,Indian Institute of Technology Delhi
RSC Advances | Year: 2015

Through detailed experiments, it has been deduced that ultraviolet (UV) light is a major factor in the degradation of dye-sensitized solar cell (DSSC) performance due to generation of surface defects in nanoporous TiO2 and dye structural modification with free radical formation. We describe a simple spray deposition method to coat europium doped yttrium vanadate (YVO4:Eu3+) down-shifting (DS) phosphor nanoparticles (NPs) on the front side of DSSCs in order to enhance photocurrent and mitigate UV induced degradation. The nanophosphor provides an enhancement in short-wavelength spectral response of solar cells, and long-term stability is also improved under illumination, due to down-shifting of high energy UV photons to the visible region. Our observations demonstrate that the DS nanophosphor layer can be used as an optical filter with visible light transmission and UV light absorption, through placement on the front surface of DSSCs to provide stability, as well as for improving the performance. This journal is © The Royal Society of Chemistry.

Chander N.,Indian Institute of Technology Delhi | Sardana S.K.,Indian Institute of Technology Delhi | Parashar P.K.,Indian Institute of Technology Delhi | Khan A.F.,Ministry of Communications and Information Technology | And 2 more authors.
IEEE Journal of Photovoltaics | Year: 2015

Europium-doped yttrium vanadate downshifting phosphor nanoparticles (NPs) have been coated on top of monocrystalline silicon solar cells, having efficiency more than 15%, by a spray deposition technique. The effects of phosphor NPs on solar cells with antireflection coating (ARC) have been studied. The optimized quantity of phosphor NPs provides a photocurrent enhancement of ∼2.1% for monosilicon solar cells. External quantum efficiency data of high-efficiency ARC layer-coated silicon solar cells conclusively show that the enhancement in short-wavelength spectral response is mainly due to downshifting effects of the phosphor NPs. A small increment in a long-wavelength spectral response is also observed due to the scattering effects of phosphor NPs, which also results in a small enhancement of effective diffusion length of minority carriers in the base region. © 2015 IEEE.

Dhanushkodi G.,Ministry of Communications and Information Technology
IEEE Transactions on Components and Packaging Technologies | Year: 2010

One of the major impacts on the thermal design of electronic systems over the past decade has been the use of computational fluid dynamics and heat transfer tools. System level thermal simulation has driven the need to understand the performance and the reliability aspects of boundary conditions. In addition to the modeling inaccuracies, computation results also reflect the influence of the accuracy of input parameters. The computational fluid dynamics model of electronic enclosures requires the pressure drop details of vents to predict the system impedance and air flow through the system thereafter. The temperature of electronic components depends on the rate of airflow through the electronic system. Loss coefficient of vents appears to be the major source of error. The modeling of each vent is typically not possible and is represented by its pressure drop. An experimental setup is established to measure the pressure drop characteristics of different patterns of vents commonly used in electronic equipment. Pressure drop of different vent patterns, with hole diameter varying from 1.6 mm to 3.0 mm, the pitch varying from 3.2 mm to 6.5 mm, and the porosity varying from 20% to 45%, are measured using an experimental setup. In this paper, a practical formula for the loss coefficient of vents is presented. This formula takes into account important parameters such as hole diameter, pitch, porosity, and Reynolds number. © 2006 IEEE.

Kumar A.,Ministry of Communications and Information Technology
ACWR 2011 - Proceedings of the International Conference on Wireless Technologies for Humanitarian Relief | Year: 2011

India has become a global power house in software and software services sector. However, it lags behind in electronics systems design and manufacturing (ESDM) capabilities. However, it is important for India to develop this sector both because of the tremendous economic opportunities it offers as well as its huge strategic relevance from security perspective. Government of India envisions making India a leading destination for ESDM sector in the world. This paper discusses some of the policy initiatives which can help India achieve this vision.

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