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Tiruchirappalli, India

Manikandan K.,Anna University | Mani P.,Anna University | Surendra Dilip C.,Anna University | Valli S.,MIET Arts and Science College | And 2 more authors.
Applied Surface Science | Year: 2014

Iron sulfide thin films (FexSx) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV-vis analysis. © 2013 Elsevier B.V. All rights reserved. Source


Syed Basheer Ahamed M.G.,MIET Arts and Science College | Balu A.R.,AVVM Sri Pushpam College | Nagarethinam V.S.,AVVM Sri Pushpam College | Thayumanavan A.,AVVM Sri Pushpam College | And 5 more authors.
Crystal Research and Technology | Year: 2010

CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperature. Band gap values are found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and 3 LO peaks at 416 cm-1 and 625 cm-1 respectively. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Syed Basheer Ahamed M.G.,MIET Arts and Science College | Nagarethinam V.S.,AVVM Sri Pushpam College | Balu A.R.,AVVM Sri Pushpam College | Thayumanavan A.,AVVM Sri Pushpam College | And 5 more authors.
Crystal Research and Technology | Year: 2010

ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperature (RT), 75, 150 and 250 °C. The films have exhibited cubic structure oriented along the (111) direction. Both the crystallinity and the grain size increased with increasing deposition temperature. A very high value of absorption co-efficient (104 cm-1) is observed. The band gap values decrease from a value of 2.94 eV to 2.69 eV with increasing substrate temperature. The average refractive index value is in the range of 2.39-2.41 for the films deposited at different substrate temperatures. The conductivity values increases continuously with temperature. Laser Raman spectra showed peaks at 140.8 cm-1, 246.7 cm-1 and 204.5 cm-1 which are attributable to 2TA LO phonon and TO phonon respectively. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Syed Basheer Ahamed M.G.,MIET Arts and Science College | Nagarethinam V.S.,AVVM Sri Pushpam College | Thayumanavan A.,AVVM Sri Pushpam College | Murali K.R.,CSIR - Central Electrochemical Research Institute | And 2 more authors.
Journal of Materials Science: Materials in Electronics | Year: 2010

ZnTe films were deposited on glass substrates at different substrate temperatures in the range 30-300 °C. The thickness of the films was about 200 nm. The films exhibited cubic structure with preferential orientation in the (111) direction. Band gap values in the range 2.34-2.26 eV are observed with increase of the substrate temperature. The refractive index values are in the range of 2.55-2.92 for the films deposited at different substrate temperatures. It is observed that the conductivity increases continuously with temperature. Laser Raman studies indicated the presence of peaks at 206.9 and 412.2 cm -1corresponding to the first order and second order LO phonon. © 2010 Springer Science+Business Media, LLC. Source


Nagarethinam V.S.,AVVM Sri Pushpam College | Ahamed M.G.S.B.,MIET Arts and Science College | Amalraj L.,VHNSN College | Balu A.R.,AVVM Sri Pushpam College | And 6 more authors.
Journal of Materials Science: Materials in Electronics | Year: 2011

ZnTe 1-x Se x films were deposited on glass substrates kept at 200 °C by the electron beam evaporation technique. These films exhibited cubic structure and the lattice parameter increased with increase of Tellurium concentration in the films which confirmed the solid solution formation. The grain size is found to increase with Te content. The dislocation density and lattice strain show a decreasing trend with increasing of Te content. Band gap values of 2.73 eV, 2.63 eV, 2.52 eV and 2.41 eV have been calculated for the films of composition 'x' = 0.2, 0.4, 0.6 and 0.8, respectively, which confirmed the formation of solid solution between ZnSe and ZnTe. Refractive index of the films increased from 2.535 to 2.826 as the concentration of Te increased. All the films showed high resistivity values. Laser Raman spectral studies of ZnTe 1-x Se x revealed LO phonon frequencies whose values are located in between the LO phonon frequencies of ZnSe and ZnTe. © 2010 Springer Science+Business Media, LLC. Source

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