Tiruchirappalli, India
Tiruchirappalli, India

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Nagarethinam V.S.,Avvm Sri Pushpam College | Ahamed M.G.S.B.,MIET Arts and Science College | Amalraj L.,VHNSN College | Balu A.R.,Avvm Sri Pushpam College | And 6 more authors.
Journal of Materials Science: Materials in Electronics | Year: 2011

ZnTe 1-x Se x films were deposited on glass substrates kept at 200 °C by the electron beam evaporation technique. These films exhibited cubic structure and the lattice parameter increased with increase of Tellurium concentration in the films which confirmed the solid solution formation. The grain size is found to increase with Te content. The dislocation density and lattice strain show a decreasing trend with increasing of Te content. Band gap values of 2.73 eV, 2.63 eV, 2.52 eV and 2.41 eV have been calculated for the films of composition 'x' = 0.2, 0.4, 0.6 and 0.8, respectively, which confirmed the formation of solid solution between ZnSe and ZnTe. Refractive index of the films increased from 2.535 to 2.826 as the concentration of Te increased. All the films showed high resistivity values. Laser Raman spectral studies of ZnTe 1-x Se x revealed LO phonon frequencies whose values are located in between the LO phonon frequencies of ZnSe and ZnTe. © 2010 Springer Science+Business Media, LLC.


Syed Ahamed Basheer M.G.,MIET Arts and Science College | Rajni K.S.,Amrita University | Vidhya V.S.,CSIR - Central Electrochemical Research Institute | Thayumanavan A.,Avvm Pushpam College | And 2 more authors.
Crystal Research and Technology | Year: 2011

CdSe:In films were prepared by electron beam evaporation technique using CdSe and In2Se3 (purity ∼99.9%) pellets. The crystal structure of the films with and without Indium, measured by X-ray diffraction (XRD), showed a typical wurtzite structure, higher Indium doping shifts the peak angle to higher side along with the broadening of the peaks. X-ray photoelectron spectroscopy (XPS) studies indicated binding energies corresponding to 54 eV (Se3d5/2), 444 eV (In 3d5/2), 411 eV (Cd 3d3/2), (Cd 3d5/2). Atomic force microscope (AFM) studies indicated a uniform surface.The grain size decreases with increase of In doping. A decrease in the band gap was observed with increase of dopant concentration. Resistivity of the films is in the range of 10-3 Ωcm. Carrier density was in the range of 1021 cm-3 for the films. The photolumineasenec spectra (PL) spectra indicated three peaks. The peak intensity decreases as the Indium concentration increases. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Balu A.R.,Avvm Sri Pushpam College | Nagarethinam V.S.,Avvm Sri Pushpam College | Ahamed M.G.S.B.,MIET Arts and Science College | Thayumanavan A.,MIET Arts and Science College | And 4 more authors.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | Year: 2010

ZnSe films of different thicknesses have been deposited on glass substrates at 150 °C substrate temperature. The films exhibited cubic structure with preferential orientation in the (1 1 1) direction. The crystallinity improved and the grain size increased with increase of thickness. A very high value of absorption coefficient (104 cm-1) is observed. Band gap values are found to decrease from about 2.92 to 2.69 eV with increase of the film thickness. The average refractive index value is in the range of 2.39-2.45 for the films with different thickness. It is observed that the conductivity increases continuously with temperature. Laser Raman studies show the presence of peaks at 140.8, 247.2 and 205.3 cm-1 corresponding to 2TA, LO phonon and TO phonon respectively. TEM study confirms the formation of well crystallized ZnSe nanoparticles. Room temperature photoluminescence emission peaks were observed at 426.9, 485 and 518 nm. © 2010 Elsevier B.V. All rights reserved.


Syed Basheer Ahamed M.G.,MIET Arts and Science College | Nagarethinam V.S.,Avvm Sri Pushpam College | Thayumanavan A.,Avvm Sri Pushpam College | Murali K.R.,CSIR - Central Electrochemical Research Institute | And 2 more authors.
Journal of Materials Science: Materials in Electronics | Year: 2010

ZnTe films were deposited on glass substrates at different substrate temperatures in the range 30-300 °C. The thickness of the films was about 200 nm. The films exhibited cubic structure with preferential orientation in the (111) direction. Band gap values in the range 2.34-2.26 eV are observed with increase of the substrate temperature. The refractive index values are in the range of 2.55-2.92 for the films deposited at different substrate temperatures. It is observed that the conductivity increases continuously with temperature. Laser Raman studies indicated the presence of peaks at 206.9 and 412.2 cm -1corresponding to the first order and second order LO phonon. © 2010 Springer Science+Business Media, LLC.


Syed Basheer Ahamed M.G.,MIET Arts and Science College | Nagarethinam V.S.,Avvm Sri Pushpam College | Balu A.R.,Avvm Sri Pushpam College | Thayumanavan A.,Avvm Sri Pushpam College | And 5 more authors.
Crystal Research and Technology | Year: 2010

ZnSe films were deposited on glass substrates keeping the substrate temperatures, at room temperature (RT), 75, 150 and 250 °C. The films have exhibited cubic structure oriented along the (111) direction. Both the crystallinity and the grain size increased with increasing deposition temperature. A very high value of absorption co-efficient (104 cm-1) is observed. The band gap values decrease from a value of 2.94 eV to 2.69 eV with increasing substrate temperature. The average refractive index value is in the range of 2.39-2.41 for the films deposited at different substrate temperatures. The conductivity values increases continuously with temperature. Laser Raman spectra showed peaks at 140.8 cm-1, 246.7 cm-1 and 204.5 cm-1 which are attributable to 2TA LO phonon and TO phonon respectively. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.


Syed Basheer Ahamed M.G.,MIET Arts and Science College | Balu A.R.,Avvm Sri Pushpam College | Nagarethinam V.S.,Avvm Sri Pushpam College | Thayumanavan A.,Avvm Sri Pushpam College | And 5 more authors.
Crystal Research and Technology | Year: 2010

CdSe films have been deposited on glass substrates at different substrate temperatures between room temperature and 300 °C. The films exhibited hexagonal structure with preferential orientation in the (002) direction. The crystallinity improved and the grain size increased with temperature. Band gap values are found decreasing from about 1.92 eV to 1.77 eV with increase of the substrate temperature. It is observed that the resistivity decreases continuously with temperature. Laser Raman studies show the presence of 2 LO and 3 LO peaks at 416 cm-1 and 625 cm-1 respectively. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.


Manikandan K.,Anna University | Mani P.,Anna University | Surendra Dilip C.,Anna University | Valli S.,Miet Arts And Science College | And 2 more authors.
Applied Surface Science | Year: 2014

Iron sulfide thin films (FexSx) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV-vis analysis. © 2013 Elsevier B.V. All rights reserved.


Kamala M.,Miet Arts And Science College | Shakeera Banu M.,Sree Narayana Guru College | Senthil R.,Miet Arts And Science College | Vijay Anand A.,Miet Arts And Science College
Research Journal of Pharmacy and Technology | Year: 2011

The world threatening disorder is the Diabetes Mellitus. It has become as a major health hazard, which is growing year after year. Today, the big cause of death in societies is diabetes and its complications such as cardiovascular diseases, hypertension etc. The current treatment in the diabetes is use of some herbal plants as it has no side effects and also it was proved to be efficient and safety. The herbal plant namely Psidium guajava Lin. was tested for its various activities and the one most observed was the anti-hyperglycemic and anti-hyperlipidemic activities of the fruit extract. Many phytoconstituents were identified and Psidium guajava was used in many clinical studies for its anti- hyperglycemic effect upon alloxan and streptozotocin induced diabetic rats. This review article depicts the anti- diabetic and anti-hyperlipidemic activities of fruit extract of Psidium guajava plant. © RJPT All right reserved.

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