e2v Microwave Technology Center

Lincoln, United Kingdom

e2v Microwave Technology Center

Lincoln, United Kingdom
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Farrington N.E.S.,e2v Microwave Technology Center | Iezekiel S.,University of Cyprus
Progress In Electromagnetics Research B | Year: 2011

The preliminary design concept, for a low-loss, high-bandwidth electromagnetically coupled vertical transition for use as a via between adjacent levels of a 3D-MCM based on membrane-supported striplines with micro-machined shielding, is presented. The design methodology, modeling using Ansoft HFSS and simulated results are presented and together represent a complete electrical characterization of the vertical transition. The simulated insertion loss of these structures is shown to be as low as 0.12 dB at 60 GHz with a 44 GHz 1 dB bandwidth. Besides studying the vertical transition, the analysis is extended to identify the range of directional coupling which can be achieved using this type of structure, which is shown to be greater than 3 dB. The structures studied rely on a versatile micromachining technique for the fabrication of the micro-shielding which allows for the conformal packaging of lines and devices, with the ultimate aim of realizing 3D system-in-a-package type modules. The concept and proposed fabrication techniques for these modules, including methods of °ip-chip MMIC attachment are detailed.


Farrington N.,e2v Microwave Technology Center | Dowthwaite M.,e2v Microwave Technology Center | Fletcher G.,e2v Microwave Technology Center | Newsome K.,e2v Microwave Technology Center | Coaker B.M.,e2v Microwave Technology Center
European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 8th European Radar Conference, EuRAD 2011 | Year: 2011

A predictive model for a complex waveguide-based multi-stage solid-state X-band radar limiter has been developed using Ansoft HFSS. The treatment of the PIN diode semiconductor material is described and its parameters detailed. The S-parameter response of the model is compared to measured results and shown to match extremely well. The onset of impact ionization and avalanche breakdown in reverse biased diodes due to peak RF voltage level is also accurately predicted. The model enables accurate estimation of the RF current flow and power dissipation in the forward biased diodes while taking into account high frequency resistance effects. As such the model is eminently suitable for coupling to a numerical thermal solver to investigate temperature effects in the structure and vicinity of the diodes. © 2011 European Microwave Assoc.

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