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Redmond, WA, United States

Davis W.O.,MicroVision
Journal of Microelectromechanical Systems | Year: 2011

The convenient half-power bandwidth formula used for measurement of quality factor Q does not apply for nonlinear systems that have jump discontinuities in their frequency responses, since one of the half-power amplitudes is not observable. This paper shows alternatives to the half-power formula that do apply to such nonlinear systems, while preserving all of the convenience of the method. Their practical use is illustrated by experimental Q measurements for a microelectromechanical systems scanning mirror. © 2011 IEEE.


Patent
MicroVision | Date: 2015-08-19

The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.


A new apparatus of plural charged particle beams with multi-axis magnetic lenses is provided, which comprises a plurality of sub-columns The apparatus employs two modified multi-axis magnetic lenses, and magnetic sub-lenses thereof therefore function as the objective lenses and the condenser lenses of all the sub-columns respectively. The plurality of sub-columns can perform the same function or different functions required for observing a surface of a specimen, such as high-throughput inspection and high-resolution review of interested features thereon. Accordingly, the apparatus can be used as a yield management tool in semiconductor manufacturing industry.


Patent
MicroVision | Date: 2014-09-09

A method for identifying, inspecting, and reviewing all hot spots on a specimen is disclosed by using at least one SORIL e-beam tool. A full die on a semiconductor wafer is scanned by using a first identification recipe to obtain a full die image of that die and then design layout data is aligned and compared with the full die image to identify hot spots on the full die. Threshold levels used to identify hot spots can be varied and depend on the background environments close thereto, materials of the specimens, defect types, and design layout data. A second recipe is used to selectively inspect locations of all hot spots to identify killers, and then killers can be reviewed with a third recipe.


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