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Spessot A.,Micron Technology Belgium BVBA | Caillat C.,Micron Technology Belgium BVBA | Fazan P.,Micron Technology Belgium BVBA | Ritzenthaler R.,IMEC | Schram T.,IMEC
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | Year: 2013

In this paper, we propose a method to extract effective diffusion coefficients for Lanthanum in HfO2 for an HKMG technology. TCAD diffusion simulations is combined to the analysis of theoretically expected Work Function shift due to Lanthanum at the HfO2/SiO2 interface and experimentally extracted Work Function value under various thermal budgets, obtaining a good agreement between simulations and experimental data. © 2013 IEEE.

Toledano-Luque M.,IMEC | Kaczer B.,IMEC | Aoulaiche M.,IMEC | Spessot A.,Micron Technology Belgium BVBA | And 6 more authors.
Microelectronic Engineering | Year: 2013

Incorporation of rare earth capping layers in the gate stack is an effective technique to tune the threshold VTH voltage of advance CMOS technologies. Furthermore, a reduction of the positive VTH drift (instability) has been reported for rare-earth doped nFETs under positive gate bias stress at high temperature. However, a non-optimized process can lead to an anomalous VTH behavior. We demonstrate that two independent components are responsible for this anomalous behavior which can be decoupled, individually studied, and then projected for meaningful lifetime extrapolations. © 2013 Elsevier B.V. All rights reserved.

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