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Boniardi M.,Polytechnic of Milan | Ielmini D.,Polytechnic of Milan | Lavizzari S.,Micron | Lacaita A.L.,Polytechnic of Milan | And 3 more authors.
IEEE Transactions on Electron Devices | Year: 2010

The phase-change memory (PCM), based on the reversible phase transition in a chalcogenide material, is among the most attractive memory concepts for next-generation nonvolatile memories. Due to the metastable nature of the amorphous state, the memory can exhibit a time variation of resistance after programming as a result of two main mechanisms: 1) structural relaxation (SR), which is an atomic rearrangement to minimize the defect density, and 2) crystallization of the amorphous chalcogenide. SR has been mostly studied at the single-cell level, whereas a statistical analysis and modeling is necessary for device reliability estimation and prediction. This work studies the statistical behavior of SR in PCM devices, through experimental and modeling approaches. Statistical SR data from PCM arrays are shown, and a Monte Carlo model for SR statistics is proposed, based on previous physical modeling of the SR process. This model allows for long-term, physics-based, and array-level reliability extrapolations in large PCM arrays. © 2006 IEEE.


News Article | December 13, 2016
Site: globenewswire.com

BOISE, ID and GLASGOW, UK, Dec. 13, 2016 (GLOBE NEWSWIRE) -- Crucial, a leading global brand of memory and storage upgrades, today announced the availability of its latest DDR4 server DIMMs. With speeds of 2666 MT/s, new Crucial® DDR4 server memory modules allow for increased performance and bandwidth within data centres and hyperscale environments. They are also available in a variety of server module types and densities ranging from 8GB to 64GB. New Crucial 2666 MT/s 8Gb-based server memory modules are approximately 11 percent faster than the previously released 2400 MT/s DIMMs. Additionally, the newly expanded portfolio of Crucial server memory will support cloud and enterprise environments that are migrating to next-generation Intel server platforms. “Improving system performance in the data centre is one of many priorities organisations are looking to address as the need to meet ever-increasing and more demanding workloads evolves,” said Michael Moreland, Crucial Server DRAM Product Marketing Manager. “Crucial’s new 2666MT/s server modules can help datacentre and hyperscale customers reduce performance burdens by using faster memory to help advance the efficiencies of their server systems.” The new modules are available for purchase at www.crucial.com and through select global partners. All Crucial memory is backed by a limited lifetime warranty. For more information about Crucial server memory offerings, visit www.crucial.com/memory-server. About Crucial  Crucial is a global brand of Micron Technology, Inc. Crucial solid state drives (SSDs) and memory (DRAM) upgrades are compatible with over 100,000 new and old desktops, laptops, workstations, and servers. Available worldwide at leading retail and e-tail stores, commercial resellers, and system integrators, Crucial products enhance system performance and user productivity. Learn more at crucial.com. About Micron Micron Technology, Inc. is a global leader in semiconductor systems. Micron’s broad portfolio of high-performance memory technologies – including DRAM, NAND and NOR Flash – is the basis for solid state drives, modules, multichip packages, and other system solutions. Backed by more than 37 years of technology leadership, Micron’s memory solutions enable the world’s most innovative computing, consumer, enterprise storage, networking, mobile, embedded and automotive applications. Micron’s common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology, Inc., visit micron.com. Limited lifetime warranty valid everywhere except Germany, where warranty is valid for 10 years from date of purchase. i Product performance and efficiency improvements are noted as comparisons between 8Gb-based 16GB DDR4 RDIMMs and 4Gb-based 16GB DDR4 RDIMMs. ©2016 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice. Neither Crucial nor Micron Technology, Inc. is responsible for omissions or errors in typography or photography. Micron, the Micron logo, Crucial, and the Crucial logo are trademarks or registered trademarks of Micron Technology, Inc. All other brand or product names are trademarks or registered trademarks of their respective holders.


News Article | July 13, 2016
Site: www.realwire.com

Slow-loading web pages, apps, and files lead to the most frustration – and lost productivity Boise, ID, and Glasgow, UK – Brits’ patience with technology lasts 60 seconds on average before we lose our temper, according to new research from Crucial, the memory and storage experts. Crucial surveyed 2,000 Brits and revealed that slow technology frustrates Brits on a regular basis, with one in five (21%) having a temper tantrum once a week, a further fifth (19%) throwing tantrums every couple of days, and 7% kicking off over slow technology every few hours. And when slow technology does strike, it takes us 60 seconds on average before we lose our temper. However, some Brits lose their patience even quicker, with 32% saying they lose patience with slow technology after just 30 seconds. Belfast, Sheffield and London emerged as the most impatient cities, whose patience with slow technology lasted an average of 54 seconds, while Aberdeen, Southampton and York were revealed as the most patient, willing to wait at least 70 seconds. Among the cited causes of tech temper tantrums, slow internet (50%), frozen computers (47%) and slow computers (40%) come out top on the frustration list. The data highlights the struggle Brits have with slow computers, something that can sap efficiency and be very time consuming. While there is no one single reason cited for a PC freezing, almost half (46%) of respondents said that opening web pages caused their PC to freeze. Other causes include opening programmes/apps (27%), opening files (21%), loading videos (17%) and when saving down an important file (12%). In addition to getting frustrated with slow technology, Crucial also found that Brits lose valuable time while waiting for their PC to unfreeze, with a third (32%) deciding to take a toilet break and a further 29% taking the opportunity to make a hot drink. Over one in five Brits (21%) don't utilise the time at all, instead spacing out and staring at nothing. Once their PC has recovered, 12% of Brits forget what they were doing, 40% postponed what they were doing until later and 32% chose to work on something else. Jonathan Weech, Crucial SSD Sr. Product Line Manager, commented “The time spent waiting on a slow computer is frustrating and it eventually adds up. Considering that the average Brit not only loses valuable time waiting for their PC to start functioning again, but also ends up being distracted and not returning to their tasks points to a critical efficiency issue when it comes to finishing jobs.” He continues, “Time spent waiting for your PC to unfreeze is one thing, but if we add up the time spent doing other tasks in the meantime, this is a huge slowdown of productivity. It’s easy to diagnose the problem, for example, if you have lots of heat and noise coming from your computer and it takes a long time to start or load apps, you’ve usually got a storage related problem with your hard drive. However, if your PC frequently suffers from the dreaded spinning hourglass of death or struggles to run more than one application at a time, then your PC most likely has a memory deficiency.” Jeremy Mortenson, Crucial DRAM Sr. Product Marketing Manager, added, “Anyone who owns a computer has at some point had to deal with it slowing down. It’s a familiar problem, but how do you solve it? A simple DRAM or SSD upgrade is the best option to relieve a great deal of your daily tech frustrations and get your PC back up to speed. This, together with additional strategies such as a PC spring clean can help, which involves getting rid of unwanted programmes, uninstalling pre-installed unused apps, clearing your browser cache and limiting the amount of applications that run when turning your PC on will have your PC functioning as good as new.” About Crucial Crucial is a global brand of Micron Technology, Inc. Crucial solid state drives (SSDs) and memory (DRAM) upgrades are compatible with over 100,000 new and old desktops, laptops, workstations, and servers. Available worldwide at leading retail and e-tail stores, commercial resellers, and system integrators, Crucial products enhance system performance and user productivity. Learn more at Crucial.com. About Micron Micron Technology, Inc., is a global leader in semiconductor systems. Micron’s broad portfolio of high-performance memory technologies — including DRAM, NAND, and NOR Flash — is the basis for solid state drives, modules, multichip packages, and other system solutions. Backed by more than 37 years of technology leadership, Micron’s memory solutions enable the world’s most innovative computing, consumer, enterprise storage, networking, mobile, embedded, and automotive applications. Micron’s common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology, Inc., visit micron.com.


Fackenthal R.,Micron | Kitagawa M.,Sony | Otsuka W.,Sony | Prall K.,Micron | And 7 more authors.
Digest of Technical Papers - IEEE International Solid-State Circuits Conference | Year: 2014

Resistive RAMs (ReRAMs) have emerged as leading candidates to displace conventional Flash memories due to their high density, good scalability, low power and high performance. Previous ReRAM designs demonstrating high performance have done so on low density arrays (<1Gb) while those reporting high-density arrays (>8Gb) were accompanied by relatively low read and write performance [1-5]. This work describes a 16Gb ReRAM designed in a 27nm node, with a 1GB/s DDR interface and an 8-bank concurrent DRAM-like core architecture. High parallelism, a pipelined data-path architecture and innovations such as concurrent set/reset verify combine to achieve 200MB/s write and 1GB/s read throughputs in a high-density device. © 2014 IEEE.


Na N.,Intel Corporation | Frish H.,Micron | Hsieh I.-W.,Intel Corporation | Harel O.,Micron | And 3 more authors.
Optics Letters | Year: 2011

We design and fabricate an efficient broadband grating coupler on a 400nm thick silicon-on-insulator wafer. The measured coupling loss is 3 dB when coupling to a single-mode fiber at 1310nm wavelength with TE polarization. The spectral FWHM and backreflection are determined to be 58nm and -27 dB, respectively. © 2011 Optical Society of America.


Pellizzer F.,Micron | Bez R.,Micron
2010 10th IEEE Conference on Nanotechnology, NANO 2010 | Year: 2010

In this paper we will review the evolution of Non-Volatile Memories (NVM) through the last decades, driven by a continuous introduction of new materials that helped the reduction of the single cell area and so the cost of the memory. As we entered into the sub-20nm realm, limitations are appearing for Flash memories and alternative physical mechanisms are proposed to store information in high density media. In this scenario, Phase Change Memory (PCM) is demonstrating the capability to enter the broad memory market and to become a mainstream technology. ©2010 IEEE.


Fenger G.L.,Mentor Graphics | Lorusso G.F.,IMEC | Hendrickx E.,IMEC | Niroomand A.,Micron
Journal of Micro/Nanolithography, MEMS, and MOEMS | Year: 2010

Extreme ultraviolet (EUV) lithography is currently the most promising technology for advanced manufacturing nodes. This study aims to assess in detail the quality of a full chip optical correction for a EUV design, as well to discuss the available approaches to compensate for EUV-specific effects. Extensive data sets have been collected on the ASML EUV Alpha-Demo Tool using the latest Interuniversity Microelectronics Center baseline resist Shin-Etsu SEVR59. In total ∼1300 critical dimension (CD) measurements at wafer level and 700 at mask level were used as input for model calibration and validation. The smallest feature size in the data set was 32 nm. Both one-dimensional and twodimensional structures through CD and pitch were measured. The reticle used in this calibration exercise allowed one to modulate flare by varying tiling densities. The shadowing effect was modeled by means of a single bias correction throughout the design. Horizontal and vertical features of different types through pitch and CD were used to calibrate the shadowing correction. The model calibration yielded an root-mean square of ∼1 nm, which was observed to improve by including reticle CD data. An EUV mask fully corrected for optical proximity correction, flare and shadowing was fabricated and qualified, demonstrating the effectiveness of the implemented corrections. © 2010 Society of Photo-Optical Instrumentation Engineers.


News Article | February 27, 2017
Site: globenewswire.com

MILPITAS, Calif., Feb. 27, 2017 (GLOBE NEWSWIRE) -- Lexar, a leading global brand of flash memory products, today announced the new 256GB capacity Lexar® Professional 1000x microSDXC™ UHS-II (U3) memory card. Designed for sports camcorders, tablets, and smartphones, the Professional 1000x microSDXC UHS-II card has read transfer speeds up to 150MB per second and write speeds up to 90MB/s. The 256GB capacity card is also verified to be compatible with GoPro® cameras. Having completed the ‘Works with GoPro’ verification process, the Lexar Professional 1000x microSD cards completed a rigorous testing process, and are capable of achieving optimal performance and compatibility with GoPro products. “GoPro customers generate a lot of content and crave a seamless recording and playback experience,” said Adam Silver, senior director of accessories and developer solutions at GoPro. “Lexar's new high-capacity card, the 256GB Professional 1000x microSDXC, has been verified by the Works with GoPro program by demonstrating great performance and we are glad to welcome it into the program." The new 256GB card offers the speed and capacity needed for all adventure seekers and adrenaline junkies to capture, transfer, and share more content on the go. With UHS Speed Class 3 (U3), this card is ideal for high-speed capture of extended lengths of 4K, 3D, and 1080p full-HD video. Capable of recording up to 9 hours of 4K video2, this card is also perfect for shooting action with an aerial camera, since they require multiple memory cards for extended use. The new card comes with a microSD™ UHS-II USB 3.0 reader to dramatically accelerate workflow with high-speed file transfer up to 150MB/s3, getting content innovators back to capturing the action faster. The Lexar Professional 1000x microSD cards also make it easy for tablet and smartphone users to quickly and easily download or save media files. With the new 256GB capacity card, users can store more than 36 hours of HD video, 67600 photos or 58100 songs.2 “I use microSD cards in my drones, and the Lexar 256GB Professional 1000x microSD card will enable me to capture large amounts of imagery and high definition video without having to change cards on location. That’s huge!” said Chris McLennan, Lexar Elite and professional travel, wildlife, adventure, and aerial photographer. “I also use Lexar microSD cards in my Android phone as storage for photo and video content. It’s great to be able to show clients previews of workflow and images I’ve captured without having to carry my laptop everywhere.” For versatility, the Lexar Professional 1000x microSD UHS-II cards are backwards compatible with UHS-I devices. All Professional line memory cards include a lifetime copy of downloadable Image Rescue® software to recover most photo and select video files, even if they’ve been erased or the card has been corrupted.4 The cards are backed by expert technical support and come with a limited lifetime warranty. The USB 3.0 reader is backed by a one year limited warranty. The new card capacity will be available in Q1 of 2017 with an MSRP of US$349.99. The Lexar Professional 1000x microSDXC/microSDHC™ cards are also available in the following capacities: 32GB, 64GB, and 128GB. To offer an even broader range of affordable performance options, the 256GB capacity High-Performance 633x microSDXC UHS-I card will move to UHS Speed Class 1 (U1) in Q1 of 2017 with an MSRP of $279.99. High-Performance 633x microSDXC/microSDHC cards are available in 16GB, 32GB, 64GB, 128GB, and 256GB capacities. All Lexar products undergo rigorous testing in the Lexar Quality Labs to ensure performance, quality, compatibility, and reliability with more than 1,200 digital devices. For more information about Lexar products, visit www.lexar.com. About Lexar Lexar is a global brand of Micron Consumer Products Group, Inc., a subsidiary of Micron Technology, Inc., one of the largest memory manufacturers in the world. Lexar products include industry-leading memory cards for photography and video, card readers, storage drives, high-performance USB flash drives, and memory cards for mobile devices. Lexar products are available worldwide at major retail and e-tail stores, and at www.lexar.com. For more information or support, visit www.lexar.com. About Micron Micron Technology, Inc. is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets a full range of DRAM, NAND and NOR flash memory, as well as other innovative memory technologies, packaging solutions and semiconductor systems for use in leading-edge computing, consumer, networking, embedded and mobile products. Micron's common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com. -------------------------------------------------------------------------------- 1Up to 150MB/s read transfer, write speeds lower. Speeds based on internal testing. Actual performance may vary. x=150KB/s. 2Based on 256GB capacity. 4K @30fps or HD 1080p @15Mbps. 12-megapixel JPEG. 128-kbps MP3 audio. Actual number of hours will vary depending on camera/device model, format resolution and compression, usable capacity, and bundled software. 3Highest transfer speeds achieved only when paired with a microSD UHS-II USB 3.0 reader. 4Image or other data recovery is not 100% guaranteed Limited lifetime warranty is limited to 10 years from purchase in Germany. ©2016 Micron Consumer Products Group, Inc. All rights reserved. Information products, and/or specifications are subject to change without notice. Neither Lexar nor Micron Technology, Inc. is responsible for omissions or errors in typography or photography.  Lexar, the Lexar logo, and Image Rescue are trademarks of Micron Consumer Products Group, Inc. Micron, the Micron logo, and When Memory Matters are trademarks of Micron Technology, Inc. GOPRO is a registered trademark of GoPro, Inc. All other trademarks are the property of their respective owners. Micron Consumer Products Group, Inc. is a subsidiary of Micron Technology, Inc.


BOISE, Idaho, Dec. 15, 2016 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (NASDAQ:MU) today announced the creation of the Xccela™ Consortium for semiconductor and electronics companies. The mission of the consortium is to promote the Xccela Bus interface as an open standard for a new type of digital interconnect and data communications bus suitable for volatile and nonvolatile memories as well as other types of integrated circuits. To better highlight the accelerated performance that applications can achieve by using the bus and supported devices, Micron has rebranded its previously announced XTRMFlash™ and XTRMBus™ to Xccela™ Flash and Xccela™ Bus. Micron, Winbond Electronics, GigaDevice Semiconductor, and AP Memory Technology are the initial members of the consortium and will work with other member companies to accelerate the industry efforts to bring a broad set of Xccela Bus compliant memories, controllers, ASICs, SoCs, and other devices to the market. Since the advent of the smart phone, people have become accustomed to graphical user interfaces, instant-on responsiveness, portability, constant connectivity, and much more from their modern day electronic devices. This expectation is becoming the norm as we cram more and more smart electronics into our cars, our living space, and our lives. Meeting the needs of the demanding digital user calls for high performance system buses to accommodate firmware and software execution as well as data processing and storage. Current system bus interfaces often require the tradeoff between performance and footprint, either the high performance of a high pin-count parallel interface or the small active signal footprint of a serial interface. Xccela Bus changes that. The Xccela Bus is the next generation of system buses that combines accelerated performance with a small signal count, the best of both worlds. In its first iteration, the Xccela Bus and its interface can facilitate data transfers up to 400MB/s (3.2Gbps) utilizing just 11 active bus signals, enabling extremely fast data transfers while paving the way for simpler system designs. “The Xccela Bus enables Micron’s Xccela Flash memory to be a disruptive solution that offers the highest level of direct code execution performance in a NOR Flash while having dramatically lower pin counts than that of traditional code execution parallel NOR Flash.  The performance and benefits of Xccela Flash has garnered much excitement across automotive, industrial multimarket, consumer, and networking segments,” stated Richard De Caro, director of NOR Flash for Micron’s Embedded Business Unit. “In order to proliferate this game changing new interface and level of performance, and to benefit the semiconductor industry as a whole, Micron is making the Xccela Bus interface an open standard.” “Winbond is excited to be part of the Xccela Consortium. We are eager to develop memory devices that will take advantage of the extreme performance and low pin count of the Xccela Bus,” said Syed S. Hussain, director Flash Memory Marketing for Winbond Electronics Corporation America. “An open Xccela Bus interface standard reduces time and money for research and development so that a broad range of host and slave devices compliant with the specification can be delivered more quickly to customers. “ “We are seeing a need for increasing the bandwidth performance of Non-Volatile Memory (NVM) devices for a new generation of applications. The Xccela Bus interface rises up to the challenge by delivering more than 4-5x the bandwidth of a Quad SPI device while maintaining a small footprint.” Said Mike Chen, Senior Director of Technical Marketing of GigaDevice Semiconductor. “We are delighted to be part of the Xccela Consortium to help drive a standard Octal SPI interface for the semiconductor industry.” “Octal PSRAM enabled by the Xccela Bus interface provides a low-pin-count alternative to standard PSRAM and Low-Power SDR/DDR DRAM. It offers 3-5x fewer signal pins at comparable performance with lower overall cost, and represents a paradigm shift in the low-density RAM market.” said Charles Chang, Director of Sales and Marketing, AP Memory. “A single Xccela Bus supporting NOR flash memory, PSRAM, and NOR/PSRAM MCPs presents a more elegant design option and a strong value proposition, especially in the diverse IoT universe. AP Memory is committed to the Xccela Bus interface.” The Xccela Consortium is open to all adopters, including semiconductor and electronics companies. Members have access to the initial specifications and can participate in the future specification definition and development. Visit the Xccela Consortium website for more details or contact Micron for additional information. Micron Technology, Inc. is a global leader in advanced semiconductor memory systems.  Micron's broad portfolio of high-performance technologies—including DRAM, NAND and NOR Flash—is the basis for solid state drives, modules, multichip packages and other system solutions.  Backed by more than 35 years of technology leadership, Micron's memory solutions portfolio enables the world's most innovative computing, consumer, enterprise storage, networking, mobile, embedded and automotive applications. Micron's common stock is traded on the NASDAQ under the MU symbol.  To learn more about Micron Technology, Inc., visit www.micron.com. ©2016 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice.  All information is provided on an “AS IS” basis without warranties of any kind. Drawings may not be to scale.  Micron, the Micron logo, Xccela and all other Micron trademarks are the property of Micron Technology, Inc.  All other trademarks are the property of their respective owners.


News Article | December 6, 2016
Site: globenewswire.com

BOISE, Idaho, Dec. 06, 2016 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (NASDAQ:MU) today announced that it has completed the acquisition of Inotera Memories, Inc. Micron acquired all of Inotera’s outstanding shares for consideration worth 30 New Taiwan Dollars per share or approximately $0.94 USD per share. This represents a transaction value of approximately $4.0 billion, net of cash and debt at Inotera, to acquire the equity not already owned by Micron. “We are excited to finalize the Inotera acquisition which will generate significant financial and strategic benefits for the company,” said Micron CEO Mark Durcan. “We expect immediate accretion to DRAM gross margins, earnings per share and free cash flow along with enhanced operational efficiency as we align Inotera with our global manufacturing operations.” About Micron Micron Technology, Inc., is a global leader in advanced semiconductor systems. Micron’s broad portfolio of high-performance memory technologies—including DRAM, NAND and NOR Flash—is the basis for solid state drives, modules, multichip packages and other system solutions. Backed by more than 35 years of technology leadership, Micron’s memory solutions enable the world’s most innovative computing, consumer, enterprise storage, networking, mobile, embedded and automotive applications. Micron’s common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com. Micron and the Micron orbit logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This press release contains forward-looking statements regarding future events that involve risks and uncertainties. For example, statements related financial and strategic benefits, the accretive nature of the transaction, and enhanced operational efficiency are forward looking statements. These forward-looking statements are subject to a number of risks and uncertainties that could cause actual results to differ materially, including: uncertainty of the expected financial performance of the combined operations following completion of the transaction; the ability to successfully integrate Inotera’s operations and employees; the ability to realize anticipated synergies and cost savings; unexpected costs, charges or expenses resulting from the transaction; as well as other risks and uncertainties identified in our Annual Report for the year ended September 3, 2016, filed on Form 10-K with the Securities and Exchange Commission. The forward-looking statements speak only as of the date of this report and undue reliance should not be placed on these statements. The Company disclaims any obligation to update any forward-looking statements as a result of new information, future events or otherwise.

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