MicroGaN GmbH

Neu-Ulm, Germany

MicroGaN GmbH

Neu-Ulm, Germany

Time filter

Source Type

Grant
Agency: European Commission | Branch: FP7 | Program: CP-IP | Phase: NMP-2007-2.5-1 | Award Amount: 13.86M | Year: 2008

The MORGaN project addresses the need for a new materials for electronic devices and sensors that operate in extreme conditions, especially high temperature, high electric field and highly corrosive environment. It will take advantage of the excellent physical properties of diamond and gallium nitride heterostructures. The association of the two materials will give rise to the best materials and devices for ultimate performance in extreme environments. Both materials possess durability and robustness to high temperature, radiation and electric field. Diamond material exhibits the best mechanical robustness and thermal conductivity, while GaN presents also high electron mobility, giving high power handling and efficiency. III-N systems have other desirable properties for sensor applications in extreme environments. It is the only highly polar semiconductor matrix that has ceramic-like stability and can form heterostructures. It has the highest spontaneous polarisation with a Curie temperature above 1000C for AlN: a lattice matched III-N heterostructure with a built-in polarisation discontinuity is expected to enable transistor action above 1000C. The packaging and metallisation of an electronic device or sensor are important elements in extreme conditions. Metal contacts must be stable and the package must be thermally compatible with the device requirements and chemically stable. MORGaN proposes a novel technological solution to electron device and sensor modules. Advanced 3D ceramic packaging and new metallisation techniques based on the emerging technology of MN\1AXN alloys will also be explored. As such, the vision of MORGaN for materials for extreme conditions is holistic, involving 2 large industrial partners, 2 industrial labs, 6 SMEs and 13 public research partners. The project includes research, demonstration, management, training and dissemination activities.


Delage S.L.,Alcatel - Lucent | Morvan E.,Alcatel - Lucent | Sarazin N.,Alcatel - Lucent | Aubry R.,Alcatel - Lucent | And 16 more authors.
4th Microwave and Radar Week, MRW-2010 - 18th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2010 - Conference Proceedings | Year: 2010

This paper give an overview of some recent results obtained by Alcatel-Thales III-V Lab using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation will give an overview of results obtained using new InAlN/GaN heterostructures, which is expected to offer similar output power but with improved efficiencies and to cope with higher working frequencies.


Sonmez E.,MicroGaN GmbH | Heinle U.,MicroGaN GmbH | Daumiller I.,MicroGaN GmbH | Kunze M.,MicroGaN GmbH
PCIM Europe Conference Proceedings | Year: 2012

The major issues, which delay the commercialization of GaN high-voltage devices, are discussed and solutions for all of them are presented in this paper. The combination of the discussed approaches promise to achieve application cost reduction in passives, cooling and housing, leading to product costs lower than using pure Si device counter parts. © VDE Verlag GMBH - Berlin.


Dadgar A.,Otto Von Guericke University of Magdeburg | Fritze S.,Otto Von Guericke University of Magdeburg | Fritze S.,LayTec AG | Schulz O.,LayTec AG | And 9 more authors.
Journal of Crystal Growth | Year: 2013

The growth of GaN-based transistor structures on silicon substrates requires strain engineering to compensate tensile thermal stress upon cooling and prevent crack formation. For high compressive stress during growth, required for thick GaN layers, plastic substrate deformation can occur. Several methods as in-situ curvature, and ex-situ XRD as well as electrical device measurements demonstrate the impact of different substrate thicknesses and substrate types on anisotropic bow, material data and device properties. © 2012 Elsevier B.V. All rights reserved.


Vittoz S.,Grenoble Institute of Technology | Rufer L.,Grenoble Institute of Technology | Rehder G.,Grenoble Institute of Technology | Heinle U.,MicroGaN GmbH | Benkart P.,MicroGaN GmbH
Procedia Engineering | Year: 2010

Some industrial areas require functioning electronics in harsh environments. A solution is to use III-V materials alloys having semiconductor, piezoelectric and pyroelectric properties. These materials, particularly nitrides such as GaN or AlN, enable advanced design of devices suitable for harsh environment. A structure based on AlGaN/GaN/AlN cantilevers coupled with a High Electron Mobility Transistor (HEMT) can act as a mechanical sensing device suited to harsh environments. In this article, we present the mechanical modeling of such a device. An analytical and a numerical model have been developed to obtain the electrical charge distribution in the structure. A theoretical electromechanical sensitivity of around 3.5 μC.m-2 could be achieved for a displacement of several hundreds of nanometers. Both models agree considerably well, presenting less than 5% deviation on the whole structure, except near the clamped area, where differences can be explained by particular boundary conditions of the numerical model. The topological characterization and numerical modeling allowed the estimation of the equivalent intrinsic residual stress in the structure and the stress distribution within each layer. The obtained results enable the use of the analytical model for further study of the electromechanical coupling with the HEMT of the structure.


Vittoz S.,Grenoble Institute of Technology | Rufer L.,Grenoble Institute of Technology | Rehder G.,Grenoble Institute of Technology | Heinle U.,MicroGaN GmbH | Benkart P.,MicroGaN GmbH
Sensors and Actuators, A: Physical | Year: 2011

Some industrial areas as oil, automotive and aerospace industries, require electromechanical systems working in harsh environments. An elegant solution is to use III-V materials alloys having semiconductor, piezoelectric and pyroelectric properties. These materials, particularly nitrides such as GaN or AlN, enable design of advanced devices suitable for harsh environment. A cantilever structure based on AlGaN/GaN/AlN heterostructures coupled with a High Electron Mobility Transistor (HEMT) can act as an electromechanical device suited for sensing applications. In this article, we present the mechanical modelling of such a structure. An analytical and a numerical model have been developed to obtain the electrical charge distribution in the structure in response to mechanical stress. A theoretical electromechanical sensitivity of 3.5 μC m-2 was achieved for the cantilever free end displacement of several hundreds of nanometres. Both models show good agreement, presenting less than 5% deviation in almost the whole structure. The differences between the two models that are pronounced near the clamped area can be explained by particular boundary conditions of the numerical model. The topological characterization and numerical modelling allowed the estimation of the equivalent intrinsic residual stress in the structure and the stress distribution within each layer. Finally, the dynamic mechanical characterization of fabricated cantilevers using laser interferometry is presented and compared to numerical modal analysis with less than 10% deviation between theoretical and experimental resonant frequencies. The obtained results enable the use of the analytical model for further study of the electromechanical coupling with the HEMT structure. © 2011 Elsevier B.V. All rights reserved.


An electronic component has at least one contact surface situated in a contact plane, at least one insulating layer disposed above the contact plane, at least one stabilizing layer disposed on the insulating layer for increasing a mechanical stability of the component, and at least one of a bonding contact and a soldering contact. The insulating layer and the stabilizing layer have at least one opening which opens in an upper side of the stabilizing layer. The upper side of the stabilizing layer is oriented away from the contact surface. The opening extends through the stabilizing layer and the insulating layer as far as the contact surface. The at least one of a bonding contact and a soldering contact extends over the stabilizing layer and touches the contact surface through the opening.

Loading MicroGaN GmbH collaborators
Loading MicroGaN GmbH collaborators