Vianello E.,University of Udine |
Vianello E.,Micro and Nanotechnology Innovation Center Campus |
Driussi F.,University of Udine |
Perniola L.,Micro and Nanotechnology Innovation Center Campus |
And 4 more authors.
IEEE Transactions on Electron Devices | Year: 2011
In part I of this paper, we study the physicochemical structure and the electrical properties of low-pressure-chemical-vapor-deposited silicon nitride (SiN) aimed to serve as storage layers for nonvolatile memory applications. An in-depth material analysis has been carried out together with a comprehensive electrical characterization on two samples fabricated with recipes yielding rather standard SiN and Si-rich SiN. The investigation points out the impact of SiN stoichiometry and hydrogen content on the electrical characteristics of gate stacks designed in view of channel hot-electron/hole-injection program/erase (P/E) operation and tunnel P/E operation. The extensive and detailed characterization establishes a sound experimental basis for the development of the physics-based trap models proposed in the companion paper. © 2010 IEEE.