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Avdeev S.M.,Institute of High Current Electronics | Erofeev E.V.,Micran Research and Production Company | Kagadei V.A.,Submicron Technologies LTD
Semiconductors | Year: 2011

The possibility of improving the parameters of AuGe/Ni- and Ge/Cu-based ohmic contacts to n-i-GaAs by modifying the preliminarily oxidized GaAs surface in a sulfide-containing solution, as well as via the effect of ultraviolet radiation generated with a KrCl excimer lamp on a chalcogenated surface, is studied. It is shown that preliminary oxidation of the n-i-GaAs surface with subsequent chalcogenation makes it possible to decrease the density of the surface states, to increase the reproducibility of the passivation of the surface, and to decrease the reduced contact resistance of the AuGe/Ni ohmic contacts by a factor of 1.5. The treatment of the chalcogenated surface of n-i-GaAs with an ultraviolet radiation with wavelength λ = 222 nm and emission power density W = 12 mW cm -2 performed in vacuum before the deposition of metal layers of the Ge/Cu ohmic contacts makes it possible to decrease the reduced contact resistance by 25-50% andimprove the morphological characteristics of the surface of the contact area. © 2011 Pleiades Publishing, Ltd. Source


Tsybulev P.G.,Russian Academy of Sciences | Dugin M.V.,Micran Research and Production Company | Berlin A.B.,Russian Academy of Sciences | Nizhelskij N.A.,Russian Academy of Sciences | And 2 more authors.
Astrophysical Bulletin | Year: 2014

We report the experimental results of a study of the sources of 1/f α type noise (hereafter referred to as 1/f-type noise for the sake of brevity) in a total power radiometer. We find this noise to have two main sources in the radiometer: microwave amplifiers and the square-law diode detector with a Schottky barrier. We present methods for a substantial reduction of 1/f-type noise, which allow total power radiometer measurements to be performed with nominal sensitivity on time scales of up to 10 seconds. The sensitivity of the total power radiometer on time scales up to 100 seconds remains higher than that of a Dicke switched radiometer. © 2014 Pleiades Publishing, Ltd. Source


Erofeev E.V.,Micran Research and Production Company | Kagadei V.A.,OOO Submicron Technologies
Semiconductors | Year: 2011

Comparative analysis of the influence of thermal annealing on Ge/Au/Ni-, Ge/Au/Ti/Au-, and Ge/Au/Ni/Ti/Au-based ohmic contacts and Ti/Au-based Schottky contacts deposited on an n-GaAs (100) surface treated and nontreated in (NH4)2S aqueous solution have been performed. Annealing conditions for ohmic contacts are found that lead to a decrease in the specific contact resistance of sulfur-treated samples by a factor of 2. 5-15 in comparison with the nontreated samples. Optimal annealing conditions are also determined for sulfur-treated GaAs samples with Schottky contacts, which make it possible to reduce the ideality factor and increase the barrier height and the breakdown voltage with respect to the nontreated samples. © 2011 Pleiades Publishing, Ltd. Source


Zagorodny A.S.,Tomsk State University of Control Systems and Radioelectronics | Drozdov A.V.,Tomsk State University of Control Systems and Radioelectronics | Voronin N.N.,Micran Research and Production Company | Yunusov I.V.,Micran Research and Production Company
International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM | Year: 2015

The paper presents the results of development of ultra-wideband passing power detectors. The results of modeling the monolithic integrated circuits of the power detectors with low insertion losses are reflected. It compares the characteristics of the models and the experimental data of produced the samples in a frequency range from 10 MHz to 65 GHz and over the 55 dB dynamic range. The insertion losses MMIC of the undirectional detectors are less than 1 dB up to 40 GHz, directional less than 2 dB up to 40 GHz. © 2015 IEEE. Source


Ishutkin S.V.,Tomsk State University | Kagadey V.A.,Micran Research and Production Company | Erofeev E.V.,Micran Research and Production Company | Anishchenko E.V.,Micran Research and Production Company | Arykov V.S.,Micran Research and Production Company
Russian Microelectronics | Year: 2015

Design-processing solutions on the formation of microwave GaAs monolithic integrated circuits (MMICs) with copper-based metallization of the frontside are presented. As a metallization of ohmic and gate contacts of pHEMTs Pd/Ge/Al/Mo and Ti/Al/Mo multilayer compositions were respectively used. The first-level metallization was based on the W/Cu/WNx composition. The second-level metallization was formed by the electrochemical copper deposition, and the Ti/Cu film was used for the deposition as a seed layer. The SixNy films were used for forming the interlevel dielectric and the dielectric of capacitors. To protect copper films from the influence of the environment, the frontside of the MMIC was covered by the benzocyclobutene (BCB) film with a 5-µm thickness. The metallization of the back side was fulfilled by the Ni/Au film with a total thickness of 3 µm. The developed design-processing solutions were tested by the example of the monolithic integrated circuit of the low-noise amplifier, based on pHEMT with 250 nm T-gates. The manufactured MMIC had a gain of 28 ± 1 dB in a frequency range of 8–10 GHz, and the noise figure did not exceed 2 dB. © 2015, Pleiades Publishing, Ltd. Source

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