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Zasavitskii I.I.,National Research Nuclear University MEPhI | Zubov A.N.,National Research Nuclear University MEPhI | Andreev A.Yu.,Mf Stelmakh Polyus Research Institute | Bagaev T.A.,Mf Stelmakh Polyus Research Institute | And 6 more authors.
Quantum Electronics | Year: 2016

A pulsed quantum cascade laser emitting in the wavelength range 9.5-9.7 μm at 77.4 K is developed based on the GaAs/Al0. 45Ga0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm-2. The maximum output power of the laser with dimensions of 30 μm x 3 mm and with cleaved mirrors exceeded 200 mW. © 2016 Kvantovaya Elektronika and Turpion Ltd. Source


Marmalyuk A.A.,Mf Stelmakh Polyus Research Institute | Ladugin M.A.,Mf Stelmakh Polyus Research Institute | Andreev A.Yu.,Mf Stelmakh Polyus Research Institute | Telegin K.Yu.,Mf Stelmakh Polyus Research Institute | And 6 more authors.
Quantum Electronics | Year: 2013

Two series of AlGaAs/GaAs laser heterostructures have been grown by metal-organic vapour phase epitaxy, and 808-nm laser diode bars fabricated from the heterostructures have been investigated. The heterostructures differed in waveguide thickness and quantum well depth. It is shown that increasing the barrier height for charge carriers in the active region has an advantageous effect on the output parameters of the laser sources in the case of the heterostructures with a narrow symmetric waveguide: the slope of their power - current characteristics increased from 0.9 to 1.05 W A-1. Thus, the configuration with a narrow waveguide and deep quantum well is better suited for high-power laser diode bars under hindered heat removal conditions. © 2013 Kvantovaya Elektronika and Turpion Ltd. Source


Gorlachuk P.V.,Mf Stelmakh Polyus Research Institute | Ryaboshtan Y.L.,Mf Stelmakh Polyus Research Institute | Ladugin M.A.,Mf Stelmakh Polyus Research Institute | Padalitsa A.A.,Mf Stelmakh Polyus Research Institute | And 8 more authors.
Quantum Electronics | Year: 2013

This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/ AlGaInAs/InP heterostructures and emitting in the range 1.5 -1.6 μm. We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures. © 2013 Kvantovaya Elektronika and Turpion Ltd. Source

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