Metal Insulator Transition Device Team

Daejeon, South Korea

Metal Insulator Transition Device Team

Daejeon, South Korea
SEARCH FILTERS
Time filter
Source Type

Seo G.,Metal Insulator Transition Device Team | Seo G.,Korean University of Science and Technology | Kim B.-J.,Metal Insulator Transition Device Team | Lee Y.W.,Metal Insulator Transition Device Team | And 6 more authors.
Thin Solid Films | Year: 2011

In this paper, we report on an experimental analysis of dimension effect on a room-temperature electrical oscillation in a planar device using vanadium dioxide (VO2) thin film. We investigate the variation of the oscillation current (IO) and frequency (fO) due to the variation of the dimension of the VO2 devices, i.e., the length and width of the current channel of the device. For five different VO2 devices with different dimensions, IO and fO are observed at room temperature in a simple circuit composed of a dc voltage source and a standard resistor including one of the VO2 devices. From the experimental investigation, it is concluded that the peak-to-peak amplitude of IO and fO decrease with the increase of the length and width of the current channel. This indicates that fO depends on not only the external source voltage but also the device dimension. © 2010 Elsevier B.V. All rights Reserved.

Loading Metal Insulator Transition Device Team collaborators
Loading Metal Insulator Transition Device Team collaborators