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Patent
Mesa Technology | Date: 2017-02-08

A transfer head array (110) includes a body (110) and a plurality of transfer heads (120). The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses (111). The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.


Patent
Mesa Technology | Date: 2015-04-30

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first current controlling layer, a first electrode, and a second electrode. The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.


Patent
Mesa Technology | Date: 2015-05-21

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor layer, a first edge isolation structure, a first electrode, and a second electrode. The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.


Patent
Mesa Technology | Date: 2015-11-12

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a current controlling structure, a first electrode, and a second electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The current controlling structure is joined with the first type semiconductor layer, and the current controlling structure has at least one current-injecting zone therein. The first electrode is electrically coupled with the first type semiconductor layer through the current-injecting zone of the current controlling structure. The second electrode is electrically coupled with the second type semiconductor layer.


A manufacturing method of a light emitting diode (LED) display device includes forming at least one sub-pixel circuit on a substrate, forming a primary electrical pad and a first backup electrical pad electrically connected to the sub-pixel circuit, disposing a first micro light emitting device on the primary electrical pad and testing the first micro light emitting device.


A manufacturing method of a light emitting diode (LED) display device includes forming at least one sub-pixel circuit on a substrate, forming a primary electrical pad and a first backup electrical pad electrically connected to the sub-pixel circuit, disposing a first micro light emitting device on the primary electrical pad and testing the first micro light emitting device.


Patent
Mesa Technology | Date: 2014-11-23

A method for transferring at least one device is provided. The method includes: coating a first adhesive layer onto a first carrier substrate; putting the device onto the first adhesive layer, such that the first adhesive layer temporarily adheres the device thereto; reducing adhesion force of the first adhesive layer to the device while remaining a location of the device in a controllable region on the first adhesive layer, wherein the first adhesive layer has a Youngs modulus less than or equal to 30 GPa before and after the adhesion force of the first adhesive layer is reduced; and transferring the device from the first adhesive layer to a receiving substrate after the adhesion force of the first adhesive layer is reduced.


Patent
Mesa Technology | Date: 2015-10-04

A light-emitting diode (LED) includes a first type semiconductor layer, a second type semiconductor layer, a first current controlling structure, and a first electrode. The second type semiconductor layer is joined with the first type semiconductor layer. The second type semiconductor layer has a first region and a second region, in which the first region has a first threading dislocation density, the second region has a second threading dislocation density, and the first threading dislocation density is greater than the second threading dislocation density. The first current controlling structure is joined with the first type semiconductor layer and has at least one first current-injecting zone therein, in which the vertical projection of the second region on the first current controlling structure at least partially overlaps with the first current-injecting zone. The first electrode is electrically coupled with the first type semiconductor layer.


Patent
Mesa Technology | Date: 2016-11-02

A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor (124), a first current controlling layer (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening (131) therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.


Patent
Mesa Technology | Date: 2016-11-23

A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor layer (124), a first edge isolation structure (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.

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