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Patent
Mesa Technology | Date: 2017-05-17

A light-emitting diode (LED) (100H) includes a first type semiconductor layer (122), a second type semiconductor layer (124), a current controlling structure (230), a first electrode (240), and a second electrode (242). The second type semiconductor layer 124) is joined with the first type semiconductor layer (122). The current controlling structure (230) is joined with the first type semiconductor layer (122), and the current controlling structure (230) has at least one current-injecting zone therein (232). The first electrode (240) is electrically coupled with the first type semiconductor layer (122) through the current-injecting zone (232) of the current controlling structure (230). The second electrode (242) is electrically coupled with the second type semiconductor layer (124).


Patent
Mesa Technology | Date: 2017-02-08

A transfer head array (110) includes a body (110) and a plurality of transfer heads (120). The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses (111). The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.


Patent
Mesa Technology | Date: 2017-04-05

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first dielectric layer, and a first electrode. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The first dielectric layer is disposed on the second type semiconductor layer. The first dielectric layer has at least one opening therein to expose at least one part of the second type semiconductor layer. A first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 m. The first electrode is partially disposed on the first dielectric layer and is electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer.


Patent
Mesa Technology | Date: 2015-08-17

A transfer head array includes a base substrate, an interlayer isolation layer, plural transfer heads, and at least one shielding layer. The interlayer isolation layer is disposed on the base substrate, and the interlayer isolation layer has a flat top surface facing away from the base substrate. The transfer heads are arranged on the interlayer isolation layer. The shielding layer is disposed in the interlayer isolation layer.


Patent
Mesa Technology | Date: 2015-08-03

A transfer head array includes a body and a plurality of transfer heads. The body has a first surface, a second surface opposite to the first surface, and a plurality of recesses. The first surface has at least one chucking region and at least one interference avoidance region, and the recesses are separated from each other and are disposed in the interference avoidance region. The transfer heads are disposed on the chucking region.


Patent
Mesa Technology | Date: 2017-03-06

A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.


A method for preparing a plurality of micro-devices for transfer includes temporarily bonding the micro-devices onto a carrier substrate; testing the micro-devices on the carrier substrate to determine if there is at least one first failed micro-device in the micro-devices; and removing the first failed micro-device from the carrier substrate.


A manufacturing method of a light emitting diode (LED) display device includes forming at least one sub-pixel circuit on a substrate, forming a primary electrical pad and a first backup electrical pad electrically connected to the sub-pixel circuit, disposing a first micro light emitting device on the primary electrical pad and testing the first micro light emitting device.


Patent
Mesa Technology | Date: 2016-11-02

A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor (124), a first current controlling layer (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first current controlling layer are joined with the first type semiconductor layer. The first current controlling layer has at least one opening (131) therein. The first electrode is electrically coupled with the first type semiconductor layer through the opening. The second electrode is electrically coupled with the second type semiconductor layer. At least one of the first electrode and the second electrode has a light-permeable part. A vertical projection of the first current controlling layer on said one of the first electrode and the second electrode overlaps with the light-permeable part. The light-permeable part is transparent or semi-transparent.


Patent
Mesa Technology | Date: 2016-11-23

A micro-light-emitting diode (micro-LED) (100A) includes a first type semiconductor layer (122), a second type semiconductor layer (124), a first edge isolation structure (130), a first electrode (140), and a second electrode (150). The second type semiconductor layer and the first edge isolation structure are joined with the first type semiconductor layer. The first electrode is electrically coupled with the first type semiconductor layer. At least a part of a vertical projection of an edge of the first type semiconductor layer on the first electrode overlaps with the first electrode. The first edge isolation structure is at least partially located on the part of the first type semiconductor layer. The second electrode is electrically coupled with the second type semiconductor layer.

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