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Kaneko S.,Kanagawa Industrial Technology Center | Kaneko S.,Tokyo Institute of Technology | Torii H.,MES AFTY Corporation Hachioji | Soga M.,Kanagawa Industrial Technology Center | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2012

Indium tin oxide (ITO) thin films were epitaxially grown on sapphire substrates by solid-source electron cyclotron resonance (ECR) plasma deposition. Compared with the other methods such as sputtering and evaporation methods, the ECR plasma method resulted in a flat surface and a low resistivity with a relatively low substrate temperature. The surface roughness was strongly dependent on the ratio of oxygen gas flow during deposition. With optimal deposition conditions, the ITO thin film epitaxially grew on a c-plane sapphire substrate with twelvefold symmetry. The surface roughness and resistivity were estimated to be 0.4nm and 1:4 × 10 -4cm, respectively. The X-ray rocking curve revealed 0.025of full width at half maximum (FWHM) on the epitaxial ITO thin film. The ITO film deposited on an epitaxial GaN(001) layer on a c-plane sapphire substrate showed sixfold in-plane symmetry, indicating the epitaxial growth of ITO(111) on the GaN(001)/c-plane sapphire substrate. © 2012 The Japan Society of Applied Physics.

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