MEMC Electronic Materials

www.sunedison.com
Novara, Italy

MEMC Electronic Materials is a United States manufacturer of silicon wafers for the semiconductor industry. Originally established in 1959 as the Monsanto Electronic Materials Company, a business unit of Monsanto Company, the company is based in St. Peters, Missouri. Ahmad Chatila is the current President and Chief Executive Officer of MEMC. Mr. Chatila was appointed President and Chief Executive Officer and a member of the Board of Directors of MEMC on March, 2nd 2009. Wikipedia.


Time filter

Source Type

Patent
MEMC Electronic Materials | Date: 2016-03-09

Processes and systems for purifying silane-containing streams are disclosed with relatively less silane being lost in impurity streams by use of distillation and/or condensation operations.


A process for preparing a catalyst comprising an inert substrate and a catalytic metal oxide being at or near the surface of the inert substrate, the process comprising:impregnating catalytic metal on the surface of or throughout the bulk of an inert substrate; andheating the metal-impregnated inert substrate to a temperature of at least about 250C to form a catalytic metal oxide at or near the surface of the inert substrate.


Patent
MEMC Electronic Materials | Date: 2013-03-15

Methods for purifying a halosilane-containing process stream are disclosed. In some embodiments, arsenic and phosphorous impurities are removed from halosilane-containing process streams by use of distillation.


A gas distribution manifold for a chemical vapor deposition reactor includes a first gas distribution zone including a central gas port located in a central portion of the manifold. The manifold also includes a second gas distribution zone including at least two intermediate ports adjacent the central gas port. The manifold further includes a third gas distribution zone including at least two outer ports, each one of the outer ports spaced from the central gas port by one of the intermediate ports. The gas distribution manifold includes a fourth gas distribution zone comprising at least two edge ports, each edge port being spaced from the central outlet port by at least one of the intermediate and outer ports.


Patent
MEMC Electronic Materials | Date: 2013-03-14

A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.


Patent
MEMC Electronic Materials | Date: 2013-03-15

A system for growing a crystal ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base with a top surface and a first sidewall that form a first cavity. The second crucible is located within the first cavity of the first crucible, and has a second base and a second sidewall that form a second cavity. The second base has a bottom surface that is shaped to allow the second base to rest against the top surface of the first base. The second crucible includes a crucible passageway to allow movement of the melt therethrough. The weir is located inward from the second sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir.


Patent
MEMC Electronic Materials | Date: 2014-08-13

Methods for producing aluminum trifluoride by acid digestion of fluoride salts of alkali metal or alkaline earth metal and aluminum, wherein the fluoroaluminate feed comprises silicon in a ratio of less than the stoichiometric amount of the fluoride salts.


Patent
MEMC Electronic Materials | Date: 2014-05-21

This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure.


Patent
MEMC Electronic Materials | Date: 2013-12-27

A solar cell is provided, the solar cell fabricated from an indium-doped monocrystalline silicon wafer sliced from an ingot grown by the Czochralski method. The solar cell is characterized by high efficiency and low light induced degradation.


Patent
MEMC Electronic Materials | Date: 2014-01-29

A catalyst for removing impurities from a silicon tetrafluoride gas, the catalyst comprising:an inert substrate selected from the group consisting of zirconia, alumina silicate, silica, alumina, yttria and mixtures thereof; anda catalytic metal oxide comprising a catalytic metal selected from the group consisting of copper, manganese, chromium, cobalt, thallium, molybdenum, silver and mixtures thereof at or near the surface of the inert substrate.

Loading MEMC Electronic Materials collaborators
Loading MEMC Electronic Materials collaborators