Chemnitz, Germany
Chemnitz, Germany

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Nadimi E.,TU Chemnitz | Ottking R.,MATcalc | Planitz P.,MATcalc | Trentzsch M.,Global Foundries Inc. | And 4 more authors.
Journal of Physics Condensed Matter | Year: 2011

The interaction between oxygen vacancies and La atoms in the La doped HfO2 dielectric were studied using first principles total energy calculations. La dopants in the vicinity of a neutral oxygen vacancy (V O) show lower formation energy compared to the La defects far from VO centres. La doping in HfO2 leads to the shift of the defect states of oxygen vacancies towards the conduction band edge. A statistical average of this shift over several possible configurations of La atoms and VO shows that the incorporation of La effectively passivates the VO induced defect states leading to the reduction of the gate leakage current and improvement of the device reliability. © 2011 IOP Publishing Ltd.


Nadimi E.,TU Chemnitz | Octtking R.,MATcalc | Planitz P.,MATcalc | Schreiber M.,TU Chemnitz | Radehaus C.,MATcalc
IEEE - 2011 Semiconductor Conference Dresden: Technology, Design, Packaging, Simulation and Test, SCD 2011 - International Conference, Workshop and Table-Top Exhibition | Year: 2011

A combination of density functional theory and non-equilibrium Green's function formalism has been applied to the atomic scale calculation of the leakage current through the strained SiO2 dielectric layer of MOSFETs. This first-principles approach accounts for intrinsic strain at the Si/SiO2 interface as well as its influence on the leakage current. Furthermore, the impact of external mechanical stress on the leakage current was investigated. It is shown that compression of atomic layers along the direction perpendicular to the interface results in a lower tunneling probability and leakage current while the tensile strain in that direction leads to higher tunneling probability and consequently higher leakage current. Based on this behavior we give an explanation for the increase of the tunneling effective mass of electrons as the thickness of the dielectric layer decreases in terms of intrinsic strain at the Si/SiO2 interface. © 2011 IEEE.


Drescher M.,Fraunhofer Institute for Photonic Microsystems | Naumann A.,Fraunhofer Institute for Photonic Microsystems | Sundqvist J.,Fraunhofer Institute for Photonic Microsystems | Erben E.,Globalfoundries | And 5 more authors.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | Year: 2015

A novel method of fluorine incorporation into the gate dielectric by gaseous thermal NF3 interface treatments for defect passivation have been investigated in 28nm high-k metal gate technology with respect to improvement in device reliability. The thermal treatment suppresses physical interface regrowth observed in previous plasma-assisted fluorine treatments. Detailed defect characterization by spectroscopic charge pumping is used to characterize the influence of fluorine on trap states in the interfacial oxide layer. Comprehensive structural as well as electrical characterization linked with bias temperature instability measurements indicates the potential of improving reliability in high-k metal gate technology by gaseous introduction of fluorine into the gate dielectric. © 2015 American Vacuum Society.

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