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Lauzacco, Italy

Banerjee G.,Indian Institute of Science | Behera M.,Marvell Semiconductors | Zeidan M.A.,National Instruments | Chen R.,Qualcomm | Barnett K.,Freescale
IEEE Journal of Solid-State Circuits | Year: 2011

A built-in-self-test (BIST) subsystem embedded in a 65-nm mobile broadcast video receiver is described. The subsystem is designed to perform analog and RF measurements at multiple internal nodes of the receiver. It uses a distributed network of CMOS sensors and a low bandwidth, 12-bit A/D converter to perform the measurements with a serial bus interface enabling a digital transfer of measured data to automatic test equipment (ATE). A perturbation/correlation based BIST method is described, which makes pass/fail determination on parts, resulting in significant test time and cost reduction. © 2011 IEEE. Source


Yonge L.,Qualcomm | Abad J.,Broadcom Corporation | Afkhamie K.,Qualcomm | Guerrieri L.,STMicroelectronics | And 6 more authors.
Journal of Electrical and Computer Engineering | Year: 2013

HomePlug AV2 is the solution identified by the HomePlug Alliance to achieve the improved data rate performance required by the new generation of multimedia applications without the need to install extra wires. Developed by industry-leading participants in the HomePlug AV Technical Working Group, the HomePlug AV2 technology provides Gigabit-class connection speeds over the existing AC wires within home. It is designed to meet the market demands for the full set of future in-home networking connectivity. Moreover, HomePlug AV2 guarantees backward interoperability with other HomePlug systems. In this paper, the HomePlug AV2 system architecture is introduced and the technical details of the key features at both the PHY and MAC layers are described. The HomePlug AV2 performance is assessed, through simulations reproducing real home scenarios. © 2013 Larry Yonge et al. Source


Piotto M.,CNR Institute of Neuroscience | Butti F.,Marvell Semiconductors | Zanetti E.,University of Pisa | Di Pancrazio A.,University of Pisa | And 2 more authors.
Sensors and Actuators, A: Physical | Year: 2015

Acoustic particle velocity sensors have been obtained applying simple low resolution micromachining steps to chips fabricated using a standard microelectronic process. Each sensor consists of four silicided polysilicon wires, suspended over cavities etched into the substrate, and connected to form a Wheatstone bridge. Full compatibility of the micromachining procedure with the original process is demonstrated by integrating a simple pre-amplifier on the same chip as the sensors and showing that both blocks are functional. Proper design of the sensing structures allows them to operate with a single 3.3 V power supply. Sensitivity and noise measurements, performed to estimate the sensor detection limit, are described. Excess noise with a flicker-like behavior, not ascribable to the amplifier, is found when the bridges are biased in working conditions. In addition, the dependence of the sensitivity on the dc bias voltage of the bridges is investigated, comparing the experimental data with the results of a simple analytical model and finite element method simulations. © 2015 Elsevier B.V. All rights reserved. Source


Byun G.-S.,West Virginia University | Kim Y.,University of California at Los Angeles | Kim J.,Hongik University | Tam S.-W.,Marvell Semiconductors | Chang M.-C.F.,University of California at Los Angeles
IEEE Journal of Solid-State Circuits | Year: 2012

A fully-integrated 8.4 Gb/s 2.5 pJ/b mobile memory I/O transceiver using simultaneous bidirectionaldual band signaling is presented. Incorporating both RF-band and baseband transceiver designs, this prototype demonstrates an energy-efficient and high-bandwidth solution for future mobile memory I/O interface. The proposed amplitude shift keying (ASK) modulator/demodulator with on-chip band-selective transformer obviates a power hungry pre-emphasis and equalization circuitry, revealing a low-power, compact and standard mobile memory-compatible solution. Designed and fabricated in 65-nm CMOS technology, each RF-band and baseband transceiver consumes 10.5 mW and 11 mW and occupies 0.08 mm 2 and 0.06 mm 2 die area, respectively. The dual-band transceiver achieves error-free operation (BER < 10 -15 ) with 2 23-1 PRBS at 8.4 Gb/s over a distance of 10 cm. © 2011 IEEE. Source


Lollio A.,University of Pavia | Bollati G.,Marvell Semiconductors | Castello R.,University of Pavia
IEEE Journal of Solid-State Circuits | Year: 2010

This paper presents a class G amplifier based on a low distortion switching principle technique called switching currents injection. The switching circuit enables a very smooth handover between the voltage supply rails obtaining both high efficiency and low distortion. An approach for the evaluation of the switching distortion in a class G amplifier (and the ability of the loop to reject it) is proposed and the results obtained are used to optimize the overall distortion after compression by the feedback loop. The integrated 65 nm CMOS class G headphone driver based on the above concept operates from ± 1.4 V and ± 0.35 V supplies. At low power level it uses almost exclusively the low voltage supply reducing the dissipation to 1.63 mW @ P out = 0.5 mW into Ω. At higher power level, where both supplies are used, the smooth transition between the rails allows a THD + N better than - 80 dB for P out ≤ 16 mW into 32 Ω. The SNR is 101 dB, quiescent power is 0.41 mW and active die area is 0.14 mm 2. © 2006 IEEE. Source

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