MAPPER Lithography | Date: 2017-03-22
A method for exposing a wafer according to pattern data using a charged particle lithography machine, compiising providing the pattern data as a dose map in a vector format; rasterizing the pattern data, the rasterizing comprising rendering the vector dose map to generate multi-level gray scale data and dithering the multi-level grayscale pattern data to generate two-level black/white data; supplying the two-level black/white data to the charged particle lithography machine; and switching the beamlets generated by the charged particle lithography machine on the basis of the two-level black/white data. A method for processing pattern data for controlling charged particle beamlets in a charged particle lithography machine, comprising performing flattening preprocessing to transform the pattern layout data into a dose map; rasterizing the dose map, comprising rendering the vector dose map to generate multi-level gray scale data and dithering the multi-level grayscale pattern data to generate beamlet control signals in the form of two-level black/white data; and multiplexing the beamlet control signals. The methods further comprise making corrective adjustments to the vector dose map and/or the multi-level gray scale data and/or the two-level black/white data to correct for variations in beamlet position, size, current, or other characteristics.
MAPPER Lithography | Date: 2015-11-12
The present invention relates to an apparatus and a method for transferring substrates into and from a vacuum chamber in a lithography apparatus. The load lock system comprises: a load lock chamber provided with an opening for allowing passage of a substrate in and out of the load lock chamber, and a transfer apparatus comprising a sub-frame at least partially arranged in the load lock chamber, an arm which is, with a proximal end thereof, connected to the sub-frame, and a substrate receiving unit which is connected to a distal end of the arm. The arm comprises at least three hinging arm parts, wherein a first and a second arm part are hingedly connected to the sub-frame with a proximal end thereof. A third arm part is hingedly connected to the distal ends of the first and second arm parts. The arm parts are arranged to form a four-bar linkage.
MAPPER Lithography | Date: 2015-06-15
A lithography system having one or more lithography elements Each lithography element has a plurality of lithography subsystems. The lithography system further has a control network forming a control network path between the plurality of the lithography subsystems and at least one element control unit for communication of control information. The lithography system is arranged for: issuing control information to the at least one element control unit to control operation of one or more of the lithography subsystems for exposure of one or more wafers; issuing a process program to the element control unit. The process program has a set of predefined commands and associated parameters. The element control unit is arranged to transmit a command of the process program to a lithography subsystem to be executed by the lithography subsystem, regardless of an execution status of a preceding command transmitted to the lithography subsystem.
MAPPER Lithography | Date: 2016-01-11
The invention relates to a target processing unit (10) comprising a vacuum chamber (30) for accommodating a target to be processed, a projection column (46) within the vacuum chamber for generating a beam and projecting the beam towards the target, and a first conduit arrangement (26,36,37,60) for connecting the projection column to external equipment (22). The vacuum chamber can comprise a positioning system (114) for supporting the target, and a second conduit arrangement (110) distinct from the first conduit arrangement for connecting the positioning system to external equipment, wherein the positioning system is moveably arranged with respect to the projection column, and wherein the positioning system and the projection column occupy spatially distinct portions of the vacuum chamber. The first conduit arrangement extends through an upper side of the vacuum chamber, and the second conduit arrangement extends through a lower side of the vacuum chamber.
MAPPER Lithography | Date: 2016-09-28
The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.
MAPPER Lithography | Date: 2016-08-30
The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.
MAPPER Lithography | Date: 2015-02-19
The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0<<1;
MAPPER Lithography | Date: 2015-02-16
A method for processing exposure data (40) for exposing a pattern on a target (30) using a plurality of charged particle beams (24), the exposure data comprising pattern data (42) representing one or more features (60) to be written on the target (30) and exposure dose data (52) describing exposure dose of the charged particle beams. The method comprises setting one or more dose values of the exposure dose data (52) such that a sum of dose values corresponding to a position in an overlap area (36) of the target exceeds a maximum dose value for the non-overlap areas (38) of the target where adjacent sub-areas (34) do not overlap, and dividing the pattern data (42) into a plurality of sub-sections (44), each of the sub-sections comprising pattern data describing a part of the pattern to be written in a corresponding sub-area (34) of the target (30), wherein the pattern data (42) comprises overlap pattern data (46) describing a part of the pattern to be written in a corresponding overlap area (36) of the target where adjacent sub-areas (34) overlap, and processing the overlap pattern data (46) to reduce a size of one or more features described by the overlap pattern data.
MAPPER Lithography | Date: 2015-07-22
The invention relates to an arrangement for transporting radicals. An electron beam system is presented comprising a beamlet generator; a beamlet manipulator (204) comprising an array of apertures; a plasma generator comprising a chamber for forming a plasma, an inlet receiving input gas and outlets removing plasma or radicals created therein, the plasma generator further comprising outlets in flow connection with the plasma chamber outlets; and a hollow guiding body (309b) guiding radicals formed in the plasma towards the array of apertures for removing contaminant deposition. The hollow guiding body (309b) is removably connectable to an extended portion (307b) of the plasma generator outlet. A cover (400) can be placed over a connection between the hollow guiding body (309b) and the extended portion (307b). The extended portion (307b) of the plasma generator outlet and the hollow guiding body (309b) can be similarly formed as a slit.
MAPPER Lithography | Date: 2016-07-07
The invention relates to a cathode arrangement comprising: