Delft, Netherlands
Delft, Netherlands
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Patent
MAPPER Lithography | Date: 2017-04-21

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.


Patent
MAPPER Lithography | Date: 2016-12-28

The invention relates to a method for performing charged particle beam proximity effect correction, comprising the steps of: receiving a digital layout pattern to be patterned onto a target using one or more charged particle beams; selecting a base proximity function comprising a sum of an alpha and a beta proximity function, wherein said alpha proximity function models a short range proximity effect and said beta proximity function models a long range proximity effect, wherein a constant is defined as a ratio between the beta proximity function and the alpha proximity function in said sum, with 0 (FR)Linvention porte sur un procd permettant deffectuer une correction de leffet de proximit dun faisceau de particules charges, dont les tapes consistent : recevoir un motif de disposition numrique appliquer sur une cible au moyen dun ou plusieurs faisceau(x) de particules charges ; slectionner une fonction de proximit de base comprenant une somme de fonctions de proximit alpha et bta, ladite fonction de proximit alpha modlisant un effet de proximit courte porte et la dite fonction de proximit bta modlisant un effet de proximit longue porte, une constante tant dfinie comme un ratio entre la fonction de proximit bta et la fonction de proximit alpha dans ladite somme, telle que 0 < < 1 ; dterminer une fonction de proximit modifie qui correspond ladite fonction deffet de proximit de base, la fonction de proximit alpha ayant t remplace par une fonction delta de Dirac, et au moyen dun processeur lectronique, procder une dconvolution du motif de disposition numrique avec la fonction de proximit modifie pour produire un motif de disposition corrig.


Patent
MAPPER Lithography | Date: 2017-03-22

A method for exposing a wafer according to pattern data using a charged particle lithography machine, compiising providing the pattern data as a dose map in a vector format; rasterizing the pattern data, the rasterizing comprising rendering the vector dose map to generate multi-level gray scale data and dithering the multi-level grayscale pattern data to generate two-level black/white data; supplying the two-level black/white data to the charged particle lithography machine; and switching the beamlets generated by the charged particle lithography machine on the basis of the two-level black/white data. A method for processing pattern data for controlling charged particle beamlets in a charged particle lithography machine, comprising performing flattening preprocessing to transform the pattern layout data into a dose map; rasterizing the dose map, comprising rendering the vector dose map to generate multi-level gray scale data and dithering the multi-level grayscale pattern data to generate beamlet control signals in the form of two-level black/white data; and multiplexing the beamlet control signals. The methods further comprise making corrective adjustments to the vector dose map and/or the multi-level gray scale data and/or the two-level black/white data to correct for variations in beamlet position, size, current, or other characteristics.


Patent
MAPPER Lithography | Date: 2016-12-28

A method for processing exposure data (40) for exposing a pattern on a target (30) using a plurality of charged particle beams (24), the exposure data comprising pattern data (48a;46ab;48b) representing one or more features (60) to be written on the target (30) and exposure dose data (58a;56ab;58b) describing exposure dose of the charged particle beams. The method comprises setting one or more dose values (70a;70b) of the exposure dose data such that a sum (72) of dose values corresponding to a position in an overlap area (36) of the target exceeds a maximum dose value for the non-overlap areas (38) of the target where adjacent sub-areas (34) do not overlap, and dividing the pattern data into a plurality of sub-sections (44), each of the sub-sections comprising pattern data describing a part of the pattern to be written in a corresponding sub-area (34) of the target (30), wherein the pattern data comprises overlap pattern data (46ab) describing a part of the pattern to be written in a corresponding overlap area (36) of the target where adjacent sub-areas (34) overlap, and processing the overlap pattern data (46ab) to reduce a size (62) of one or more features (60) described by the overlap pattern data.


Patent
MAPPER Lithography | Date: 2015-12-28

A method for initializing a first operation in a first module at a first start time value in a first time base, the method comprising generating a clock signal, generating a second time base in the first module based on the clock signal, determining a second sync value in the second time base, determining a first sync value in the first time base corresponding to a second sync value in the second time base, determining a start trigger value in the second time base based on the first sync value and the start time value in the first time base, and initializing the first operation in the first module based on the start trigger value and a current value of the second time base in the first module.


Patent
MAPPER Lithography | Date: 2017-03-15

The invention relates to an assembly (1) for enclosing a target processing machine. The assembly comprises an enclosure (2) and a transfer unit (3). The enclosure comprises a base plate (21) for arranging said target processing machine thereon, side wall panels (22), which are fixed to said base plate, and a top wall panel (23) which is fixed to said side wall panels. In addition, the enclosure comprises an access opening (24) in a side wall of the enclosure. The transfer unit comprising one or more transfer elements (31) for moving the transfer unit with respect to the base plate. The transfer unit further comprises a door panel (32) which is arranged for closing the access opening, wherein the door panel is movably mounted to the transfer unit by means of a flexible coupling (33) which allows a movement of the door panel with respect to the transfer unit at least in a direction towards and/or away from the enclosure.


Patent
MAPPER Lithography | Date: 2016-01-11

The invention relates to a target processing unit (10) comprising a vacuum chamber (30) for accommodating a target to be processed, a projection column (46) within the vacuum chamber for generating a beam and projecting the beam towards the target, and a first conduit arrangement (26,36,37,60) for connecting the projection column to external equipment (22). The vacuum chamber can comprise a positioning system (114) for supporting the target, and a second conduit arrangement (110) distinct from the first conduit arrangement for connecting the positioning system to external equipment, wherein the positioning system is moveably arranged with respect to the projection column, and wherein the positioning system and the projection column occupy spatially distinct portions of the vacuum chamber. The first conduit arrangement extends through an upper side of the vacuum chamber, and the second conduit arrangement extends through a lower side of the vacuum chamber.


The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.


Patent
MAPPER Lithography | Date: 2016-08-30

The invention relates to a substrate handling and exposure arrangement comprising a plurality of lithography apparatus, a clamp preparation unit for clamping a wafer on a wafer support structure, a wafer track, wherein the clamp preparation unit is configured for accepting a wafer from the wafer track, and an additional wafer track for transferring the clamp towards the plurality of lithography apparatus.


The invention relates to a cathode arrangement comprising:

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