Cheongju, South Korea
Cheongju, South Korea

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Patent
Magnachip Semiconductor Inc. | Date: 2016-07-26

A method of correcting an output value of a geomagnetic sensor that recursively calculates a state estimate, an estimate gain vector, and an estimate error co-variance based on the output value of the geomagnetic sensor that is acquired sequentially and corrects the output value of the geomagnetic sensor based on the value includes acquiring a k_(th )output value of the geomagnetic sensor, calculating a k_(th )estimate gain vector based on a k1_(th )estimate error co-variance and the k_(th )output value, calculating a k_(th )state estimate based on the calculated k_(th )estimate gain vector and the k_(th )output value and a k1_(th )state estimate, calculating the k_(th )estimate error co-variance using the k_(th )estimate gain vector and a k1_(th )estimate error co-variance, and correcting the output value of the geomagnetic sensor based on the k_(th )state estimate, wherein k is a natural number larger than 1.


A method for calculating an angle of inclination of a magnetic field in a sensor coordination system includes measuring a magnetic field vector using a magnetometer, measuring an acceleration vector using an accelerometer, determining whether the sensor coordination system is in a moving state or a stationary state using the acceleration vector, and calculating the inclination angle of the magnetic field using the magnetic field vector and the acceleration vector, in response to the determining indicating the stationary state.


Patent
Magnachip Semiconductor Inc. | Date: 2016-12-07

Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping.


Patent
Magnachip Semiconductor Inc. | Date: 2016-05-04

A power semiconductor device includes a semiconductor substrate, trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate, a second conductivity type body region formed between the trench structures, a first conductivity type source region formed in the second conductivity type body region, and an emitter electrode and a gate pad formed over the substrate, wherein each trench structure includes a top electrode and a bottom electrode, and each top electrode is insulated from the corresponding bottom electrode, and wherein the first trench structure is symmetric to the fourth trench structure, and the second trench structure is symmetric to the third trench structure, and wherein the first trench structure is not identical to the second trench structure, and wherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure.


Patent
Magnachip Semiconductor Inc. | Date: 2016-03-28

A trigger circuit includes a high voltage protector configured to scale down a first voltage according to an internal voltage to output a second voltage having a lower level than the first voltage, a switching trigger configured to detect that the outputted second voltage falls below a certain voltage level to provide a switching trigger signal, and a switching controller configured to provide a switching control signal for turning on a driving switching element based on the switching trigger signal.


Patent
Magnachip Semiconductor Inc. | Date: 2016-03-28

Provided is a power consumption reduction type power converter. For example, such a power converter includes a regulator configured to convert a power voltage into an operation power of a main integrated circuit (IC), a mode detecting pin configured to detect a voltage level of the operation power, wherein the detected voltage level indicates a disable mode or an enable mode, a mode signal output circuit connected to the mode detecting pin, configured to output a mode converting signal, and a switching controller configured to block or connect a power route according to the mode converting signal to supply or block the operation power from being provided to the main IC, wherein the mode detecting pin is connected to a first switch and a first capacitor to perform a charging or a discharging operation of the first capacitor according to a switching operation of the first switch.


Patent
Magnachip Semiconductor Inc. | Date: 2016-07-14

A trigger circuit includes an off-time controller configured to receive a sensing voltage by sensing a driving current and to compare the sensing voltage to first and second certain voltages that are close to a zero voltage value and symmetrical to the zero voltage value to control a turn-off time of a driving switch in order for the sensing voltage to correspond to the zero voltage value at the turn-on time point of the driving switch and a switching controller configured to provide a switching control signal for turning on the driving switch at the turn-on time point of the driving switch.


Patent
Magnachip Semiconductor Inc. | Date: 2016-07-13

A level shifting circuit includes a transistor output unit that receives a first power supply signal and convert the first power supply signal to a second power supply signal having a different level from the first power supply signal and a current provision unit that provides a current to an output terminal of the transistor output unit when the first power supply signal of the transistor output unit is inputted to shorten a prolonged portion of the second power supply signal. Therefore, the level shifting circuit may provide an additional current to the output terminal of the transistor output unit to shorten a prolonged portion of the output voltage.


Patent
Magnachip Semiconductor Inc. | Date: 2016-08-22

A semiconductor device with an embedded schottky diode and a manufacturing method thereof are provided. A semiconductor device having a schottky diode include: an epilayer of a first conductivity type, a body layer of a second conductivity type, and a source layer of the first conductivity type arranged in that order; a gate trench that extends from the source layer to a part of the epilayer; a body trench formed a predetermined distance from the gate trench and extends from the source layer to a part of the epilayer; and a guard ring of the second conductivity type that contacts an outer wall of the body trench and formed in the epilayer.


Patent
Magnachip Semiconductor Inc. | Date: 2016-09-13

The present disclosure relates to a photo sensor module. The thickness and size of an IC chip may be reduced by manufacturing a photo sensor based on a semiconductor substrate and improving the structure to place a UV sensor on the upper section of an active device or a passive device. The photo sensor module includes a semiconductor substrate, a field oxide layer, formed on the semiconductor substrate, and a photo sensor comprising a photo diode formed on the field oxide layer.

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