Magnachip Semiconductor Inc. | Date: 2015-01-12
A vertical Hall sensor, a Hall sensor module, and a method for manufacturing the same are provided. By applying a trench structure inside a substrate with respect to a ground terminal, a directional component parallel to surface of the substrate is maximized with respect to a current flow to detect the magnetic field with improved sensitivity.
Magnachip Semiconductor Inc. | Date: 2015-06-16
A light emitting diode (LED) driving circuit includes a flicker elimination unit configured to perform a flicker removal for LED modules and a driving control unit configured to pause a procedure of the flicker removal based on an AC input voltage that is regulated through a Triode for Alternating Current (TRIAC) dimmer, so as to cause a brightness of the LED modules to be dimmed. Therefore, the LED driving circuit selectively adjusts an LED brightness level and removes LED flicker by using a TRIAC dimmer and controls the brightness level of the LED module based on a dimming level.
Magnachip Semiconductor Inc. | Date: 2015-09-11
A non-volatile memory device includes a semiconductor substrate, a well region situated on the semiconductor substrate, a floating gate situated on the well region, a floating gate channel region, a control gate situated on both sides of the floating gate, a control gate channel region, and an ion implantation area for regulating a program threshold voltage integrally formed between an area underneath of the floating gate and the control gate and a foreside of the well region, wherein a doping concentration of the ion implantation area for regulating a program threshold voltage is greater than a doping concentration of the well region. Therefore, the non-volatile memory device of examples integrally forms an ion implantation area for regulating a program threshold voltage irrespective of a channel region of a floating gate and a control gate so as to guarantee durability of a non-volatile memory device.
Magnachip Semiconductor Inc. | Date: 2015-06-26
A charge pumping method includes: generating a first boosted voltage by boosting an input voltage by a boosting mode of a first multiplier; changing the level of a voltage charged in at least one capacitor provided in the inside of a charge pump circuit, in preparation for a change in the boosting mode; and generating a second boosted voltage by boosting the input voltage by a boosting mode of a second multiplier.
Magnachip Semiconductor Inc. | Date: 2015-02-18
A switch control circuit for controlling an average current flowing into a load through a current control switch that is series-coupled to an input power and the load includes a sensing unit configured to measure a current flowing into the load, a folder unit configured to fold a sensing signal related to the measured current based on a first reference voltage to generate first and second folder output signals based on an initialization voltage, the first and second folder output signals being symmetric to each other, a comparison unit configured to compare the generated first and second folder output signals and a control unit configured to control an operation of the current control switch according to a comparison result in the comparison unit. Such a switch control circuit integrates and compares a sensing signal and a reference signal to effectively perform an average current control.