Magnachip Semiconductor Inc. | Date: 2016-07-26
A method of correcting an output value of a geomagnetic sensor that recursively calculates a state estimate, an estimate gain vector, and an estimate error co-variance based on the output value of the geomagnetic sensor that is acquired sequentially and corrects the output value of the geomagnetic sensor based on the value includes acquiring a k_(th )output value of the geomagnetic sensor, calculating a k_(th )estimate gain vector based on a k1_(th )estimate error co-variance and the k_(th )output value, calculating a k_(th )state estimate based on the calculated k_(th )estimate gain vector and the k_(th )output value and a k1_(th )state estimate, calculating the k_(th )estimate error co-variance using the k_(th )estimate gain vector and a k1_(th )estimate error co-variance, and correcting the output value of the geomagnetic sensor based on the k_(th )state estimate, wherein k is a natural number larger than 1.
Magnachip Semiconductor Inc. | Date: 2016-04-19
A method for calculating an angle of inclination of a magnetic field in a sensor coordination system includes measuring a magnetic field vector using a magnetometer, measuring an acceleration vector using an accelerometer, determining whether the sensor coordination system is in a moving state or a stationary state using the acceleration vector, and calculating the inclination angle of the magnetic field using the magnetic field vector and the acceleration vector, in response to the determining indicating the stationary state.
Magnachip Semiconductor Inc. | Date: 2016-05-04
A power semiconductor device includes a semiconductor substrate, trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate, a second conductivity type body region formed between the trench structures, a first conductivity type source region formed in the second conductivity type body region, and an emitter electrode and a gate pad formed over the substrate, wherein each trench structure includes a top electrode and a bottom electrode, and each top electrode is insulated from the corresponding bottom electrode, and wherein the first trench structure is symmetric to the fourth trench structure, and the second trench structure is symmetric to the third trench structure, and wherein the first trench structure is not identical to the second trench structure, and wherein no first conductivity type source region is formed to be adjacent to the second trench structure and the third trench structure.
Magnachip Semiconductor Inc. and ITM Semiconductor Co. | Date: 2016-10-26
A power MOSFET includes an insulating layer, a first conductivity type doping layer situated on a bottom of the insulating layer, a second conductivity type body situated on a bottom of the first conductivity type doping layer, a gate electrode adjacent to the bottom of the insulating layer and covered with an insulating film in other regions and projected to penetrate the second conductivity type body, and a source electrode including a first region situated on a top of the insulating layer and a second region in contact with the first conductivity type doping layer by penetrating the insulating layer.
Magnachip Semiconductor Inc. | Date: 2017-01-04
There is provided a CMOS inverter circuit device. The CMOS inverter circuit device includes a delay circuit unit configured to generate different charge and discharge paths of each gate node of a PMOS transistor and an NMOS transistor respectively at the time that an input signal transitions between high and low levels. Therefore, the present examples minimize or erase generation of a short circuit current made at the time that the input signal transition. The examples may simplify circuit architecture, and may make a magnitude of a CMOS inverter circuit device smaller.
Magnachip Semiconductor Inc. | Date: 2017-01-30
Provided is a capacitive humidity sensor. The capacitive humidity sensor includes an upper electrode disposed on a first plane, a plurality of first electrodes included in the upper electrode, a plurality of second electrodes disposed between the first electrodes, and a humidity sensitive layer surrounding the second electrodes.
Magnachip Semiconductor Inc. | Date: 2017-01-27
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region disposed in the well region, a gate electrode disposed above the well region, a thin gate insulating layer and a thick gate insulating layer disposed under the gate electrode, the thick gate insulating layer being disclosed closer to the drain region than the thin gate insulating layer, and an extended drain junction region disposed below the gate electrode.
Magnachip Semiconductor Inc. | Date: 2017-02-07
Provided is a semiconductor package. The semiconductor package includes: a first die that is a monolithic type die, a driver circuit and a low-side output power device formed in the first die; a second die disposed above the first die, the second die comprising a high-side output power device; and a first connection unit disposed between the first die and the second die.
Magnachip Semiconductor Inc. | Date: 2016-07-07
A one-time programmable non-volatile memory device includes a first conductivity type well region located in a semiconductor substrate, a selection gate electrode and a floating gate electrode located on the substrate, a first doped region located between the selection gate electrode and the floating gate electrode, a second conductivity type source region located on one side of the selection gate electrode, and a second conductivity type drain region located on one side of the floating gate electrode, wherein a depth of the drain region has a depth shallower than that of the first doped region with respect to a top surface of the substrate.
Magnachip Semiconductor Inc. | Date: 2017-02-14
A method of sensing a sliding by a sensor including grouping one or more Hall elements into one or more groups, measuring magnetic field strength generated by a magnetic field source, and comparing the magnetic field strength at the one or more Hall elements to determine whether a horizontal sliding occurs.