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Hao X.,Maenaka Human sensing Fusion Project | Tanaka S.,Rohm And Haas Company | Masuda A.,Japan Science and Technology Agency | Nakamura J.,Yamaha | And 4 more authors.
IEEE Sensors Journal | Year: 2014

In the field of silicon on nothing (SON) structure , micrometer-thick monocrystalline layers suspended over their parent wafer were produced by high-temperature annealing of specific arrays of trenches. Those trenches reorganize into one single void and leave a thin overlayer on top. Since this method may be an easy way of synchronous fabricating high-quality silicon films and vacuum void, this paper investigates its potential applications for a pressure sensor. A capacitive absolute pressure sensor whose pressure sensitive membrane is formed by the SON structure was fabricated and evaluated. The radius and thickness of the sensitive membrane are 100 and 1.7-μ, respectively. The average sensitivity of the sensor array with 15 diaphragms is 2.88 fF/kPa. This novel fabrication process enables to easily form a high vacuum cavity without hermetical sealing process such as anodic bonding technology, to achieve an excellent long-term stability and reliability, in particular, and to easily integrate detection circuits with the sensor. © 2013 IEEE. Source


Nizhnik O.,Maenaka Human sensing Fusion Project | Higuchi K.,Maenaka Human sensing Fusion Project | Maenaka K.,University of Hyogo
Sensors | Year: 2012

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry. © 2012 by the authors. Source


Nizhnik O.,Maenaka Human sensing Fusion Project | Higuchi K.,Maenaka Human sensing Fusion Project | Maenaka K.,Maenaka Human sensing Fusion Project
Sensors | Year: 2011

A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter. © 2011 by the authors; licensee MDPI, Basel, Switzerland. Source

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