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Croteau J.,Macom
Microwave Journal | Year: 2014

GaN technology development has been driven primarily by government funding and R&D. GaN on silicon carbide (SiC) is being successfully applied in the military domain for applications including broadband electronic warfare jammers and radar systems, while GaN on silicon has been successfully deployed in military communications. This activity has helped GaN's penetration into commercial markets including CATV cellular infrastructure, and other applications. GaN will remain segmented into two distinct varieties to accommodate the unique price/performance requirements of these diverse commercial applications. These two varieties include CaN on SiC for specialized high performance applications and GaN on Si for cost-sensitive volume applications. GaN technology is reaching its potential, solving both the technical and cost challenges is critical to its mainstream commercial adoption. Source

Pilgrim D.,Peregrine Semiconductor | Carlson D.,Macom
Microwave Journal | Year: 2014

GaN has been able to outperform GaAs PAs and challenge LDMOS PAs, but it has had only limited success in some high performance markets due to most cost associated with it. This is changing as GaN on Si is ready to scale to 8 inch wafers and use low cost plastic packaging techniques that will significantly reduce the cost of GaN on Si and allow it to become a mainstream solution in the RF industry. CMOS technology also continues to rapidly dominate any market where it meets the required performance. This is due to the amount of investment in CMOS technology has led to massive manufacturing scale and continuous process technology improvements. CMOS represents an inflection point for rapid transition from an incumbent technology to CMOS when it reaches the equivalent performance. The integrated RFFE solution based on the UItraCMOS 10 technology platform offers an architecture that is 100 percent CMOS-based, which enables all components to be integrated including 3-path, multimode, multiband PA and antenna switch. Source

Compton C.,Macom
IEEE International Conference on Microelectronic Test Structures | Year: 2015

A set of NPN CML (Current Mode Logic) oscillators is designed in a 0.18um SiGe BiCMOS process, with the intention to provide model verification and process monitoring capabilities. The main design goals are that the oscillators need to be small and easy to test such that many of them can be placed in the scribe line and be measured by production PCM test equipment. © 2015 IEEE. Source

Otte R.F.,Promex Industries Inc. | Pfahl R.,INEMI | Kimerling L.,Massachusetts Institute of Technology | Bottoms B.,Third Solutions | And 4 more authors.
2016 International Conference on Electronics Packaging, ICEP 2016 | Year: 2016

The evolution of the Photonics Systems Manufacturing Consortium (PSMC) and its activities and tentative results are discussed. The PSMC evolved from the long standing optical electronic roadmap activities of the Massachusetts Institute of Technology Micro Photonics Center Communications Technology Roadmap (MIT MPC CTR) and the international Network for Manufacturing Innovation (iNEMI) when these two organization jointly responded to and won a National Institute for Standards and Technology (NIST) RFQ to roadmap photonic integrated circuits and applications in May of 2014. PSMC has made much progress reported herein since then. In July of 2015, the formation of the American Institute for Manufacturing Integrated Photonics (AIM-IP) was announced. Subsequently, PSMC joined AIM-IP and is now expanding its role to include more applications of optical electronics technology. In addition, PSMC is running a series of workshops and seminars to gather information, in the first case, and to educate interested parties in the second case. The near term PSMC objective is to define gaps and technical needs in optical electronic that are, or will become, barriers to utilizing optical technologies in applications. The tentative results as of early December 2015 are reported as well as the intended activities over the next few years. The long term PSMC objective is to contribute to the AIM IP purpose of establishing a self-sustaining institution based on fulfilling the technology needs to enable the growth of optical electronics in data communications, sensors and other applications. © 2016 The Japan Institute of Electronics Packaging. Source

Tuffy N.,Macom | Pattison L.,Macom
European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC | Year: 2015

This paper outlines the approach used for the design of a high efficiency 30W Doherty power amplifier. The benefits of exploiting the inherent device nonlinearities for Class-J PA operation are discussed, specifically in the case of Doherty amplifiers. The combination of Class-J modes and internal device matching ensures high performance in a compact, cost-sensitive Doherty amplifier design. To validate the discussed theory, a simple 2.7 GHz symmetric Doherty PA was designed and fabricated, producing 30W of output power with greater than 60% efficiency at 6 dB back-off. The PA was subsequently linearized using a wideband 20 MHz LTE signal with a PAPR of 6.5 dB. For an ACPR of <-50 dBc, 8W of average output power was obtained with a corresponding efficiency of 60%. © 2015 EuMA. Source

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