Kulkarni S.,P.A. College |
Sensors and Transducers | Year: 2011
Indium Oxide (In 2O 3) thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 650 0C to 950 0C for two hours in air atmosphere. The material characterization was done using X-ray energy dispersive analysis (EDAX), X-ray diffraction (XRD) and a scanning electron microscope (SEM). The deposited films were polycrystalline in nature with a preferred orientation along the (222) plane. Structural parameters such as the crystallite size, texture coefficient, RMS microstrain, dislocation density and stacking fault probability have been studied. The results indicate that reported parameters changes with firing temperature. The crystallite size changes from 26.8 nm to 31 nm with respect to the firing temperature. © 2011 IFSA.
Shinde U.P.,Lvhcollege |
Patil A.V.,Lvhcollege |
Dighavkar C.G.,Lvhcollege |
Patil S.J.,Msgcollege |
And 3 more authors.
Optoelectronics and Advanced Materials, Rapid Communications | Year: 2010
Thin films of Zn-Te compound of varying compositions and thicknesses have been formed on glass substrates employing three temperature method. The photoconductivity study was made at dark and illuminated conditions. The spectral response of photocurrent as a function of certain wavelength of incident radiations, maximum photocurrent is developed at about 520 nm irrespective of composition and thickness. For the same composition of Zn and Te, photocurrent is function of applied bias voltage and the incident light intensity. The maximum photocurrent was developed at about thickness of 500 nm irrespective of composition and also stoichiometric ZnTe films irrespective of thickness at room temperature.