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News Article | May 16, 2017
Site: marketersmedia.com

Taste the market data and market information presented through more than 30 market data tables and figures spread over 100 numbers of pages of the project report. Avail the in-depth table of content TOC & market synopsis on “Silicon Photonics Market Research Report - Forecast to 2023”. Market Highlights: In this technology driven environment with development in each and every sector, the silicon photonics market is coming up with whole new innovation in access to organization. Silicon photonics refers to the application of photonic systems using silicon as an optical medium. The silicon material used in such photonic systems is designed with sub micrometer precision and is deployed into the micro photonic components. This technology enables data transfer at low power consumption over an optical fiber. Moreover, silicon photonics satisfies the mounting need of high data transfer rate and enhances the capabilities such as computational and processing needs of data centers. The Silicon Photonics Market is growing rapidly over 22% of CAGR and is expected to reach at approx. USD 1000 billion by the end of forecast period. Key Players of Silicon Photonics Market: • Infinera Corporation (U.S.) • Cisco Systems, Inc. (U.S.) • Intel Corporation (U.S.) • IBM Corporation (U.S.) • Mellanox Technologies Ltd. (U.S.) • Hamamatsu Photonics K.K. (Japan) • STMicroelectronics N.V. (Switzerland) • Finisar Corporation (U.S.) • Luxtera Inc. (U.S.), Das Photonics (Spain) Silicon Photonics Market Segmentation: The silicon photonics market has been segmented on the basis of component, product and application. On basis of product type the silicon photonics market consists of mainly transceivers. The transceivers implement physical layer protocols for various communications and serial bus interface standards. Maxim’s transceivers integrate a wide array of features to increase reliability and simplify designs while providing the highest levels of protection on the market. Brief TOC: 1 Market Introduction 1.1 Introduction 1.2 Scope of Study 1.2.1 Research Objective 1.2.2 Assumptions 1.2.3 Limitations 1.3 Market Structure 2 Research Methodology 2.1 Research Type 2.2 Primary Research 2.3 Secondary Research 2.4 Forecast Model 2.4.1 Market Data Collection, Analysis & Forecast 2.4.2 Market Size Estimation 3 Market Dynamics 3.1 Introduction 3.2 Market Drivers 3.3 Market Challenges 3.4 Market Opportunities 3.5 Market Restraints 4 Executive Summary 5. Market Factor Analysis 5.1 Porter’s Five Forces Analysis 5.2 Supply Chain Analysis Continue… Market Research Analysis: Market Research Future Analysis shows the demand for high-speed data transfer in data centers is expected to boost the market for silicon photonics technology. In this application, silicon photonics enhances performance in terms of computation, communication, and measurement to fulfill the needs of consumers and enterprise cloud services. This would drive the growth of the silicon photonics market for the data communication application. Regional analysis for silicon photonics market is studied in different geographic regions as North America, Europe, Asia-Pacific and rest of world. North America region is the leading player in silicon Photonics market because of major advanced technology market present in the region and dominance of cost and power effective technologies in the development of the silicon photonics system. And because of the increasing adoption of power effective solutions is significantly growing. Asia-Pacific region is growing because of major electronics components manufacturing players present in the region. The reason for this growth is adoption of new technologies, economic growth, and increasing use of cloud-based and networking services in the corporate world. About Market Research Future: At Market Research Future (MRFR), we enable our customers to unravel the complexity of various industries through our Cooked Research Report (CRR), Half-Cooked Research Reports (HCRR), Raw Research Reports (3R), Continuous-Feed Research (CFR), and Market Research & Consulting Services. . Our market research studies by Solutions, Application, Logistics and market players for global, regional, and country level market segments, enable our clients to see more, know more, and do more, which help to answer all their most important questions. In order to stay updated with technology and work process of the industry, MRFR often plans & conducts meet with the industry experts and industrial visits for its research analyst members. For more information, please visit https://www.marketresearchfuture.com/


Streshinsky M.,National University of Singapore | Ayazi A.,Luxtera Inc. | Xuan Z.,University of Delaware | Lim A.E.-J.,Institute of Microelectronics, Singapore | And 5 more authors.
Optics Express | Year: 2013

We present measurements of the nonlinear distortions of a traveling-wave silicon Mach-Zehnder modulator based on the carrier depletion effect. Spurious free dynamic range for second harmonic distortion of 82 dB·Hz 1/2 is seen, and 97 dB·Hz2/3 is measured for intermodulation distortion. This measurement represents an improvement of 20 dB over the previous best result in silicon. We also show that the linearity of a silicon traveling wave Mach-Zehnder modulator can be improved by differentially driving it. These results suggest silicon may be a suitable platform for analog optical applications. © 2013 Optical Society of America.


De Dobbelaere P.,Luxtera Inc.
2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings | Year: 2015

Increasing data interconnect densities and rates drive the requirements for optical high-speed interfaces to ASICs (e.g. network switches, routers, CPU's). In contemporary implementations, as illustrated in Figure 1a, optical transceivers (such as SFP and QSFP modules and AOCs) are located at the card edge. In such an architecture increasing data rates aggravate electrical signal integrity issues due to reflections at optical connectors and losses (dielectric and skin-effect) in the relatively long traces on the card PCBA connecting the electrical pads of the switch chip with the fingers of the transceiver module. To overcome those challenges, advanced (power hungry) electrical I/Os (re-timers, equalizers,) on the ASIC and the optical transceivers are required. Also advanced (costly) PCB materials may be needed. An approach to reduce those signal integrity problems is to reduce the distance between the optical transceivers and the ASIC by moving the transceivers from the board edge to the inside of the shelf as illustrated in Figure 1b. Here the optical signals are routed to the front panel by means of optical fibers. As an additional benefit, embedding the transceivers in the card may increase the achievable density at the card edge. However, it also adds more stringent reliability and thermal management requirements for the optical transceivers. An example is the IBM Power 775 System where transceivers are located around a HUB ASIC [1]. The most ideal solution has the ASIC and the optical transceivers integrated or co-packaged as shown in Figure.2c. This approach virtually eliminates the signal integrity challenges and enables the highest interconnect density. © 2015 IEEE.


Zheng X.,Oracle Inc. | Shubin I.,Oracle Inc. | Li G.,Oracle Inc. | Pinguet T.,Luxtera Inc. | And 8 more authors.
Optics Express | Year: 2010

We report the first compact silicon CMOS 1×4 tunable multiplexer/ demultiplexer using cascaded silicon photonic ring-resonator based add/drop filters with a radius of 12μm, and integrated doped-resistor thermal tuners. We measured an insertion loss of less than 1dB, a channel isolation of better than 16dB for a channel spacing of 200GHz, and a uniform 3dB pass band larger than 0.4nm across all four channels. We demonstrated accurate channel alignment to WDM ITU grid wavelengths using integrated silicon heaters with a tuning efficiency of 90pm/mW. Using this device in a 10Gbps data link, we observed a low power penalty of 0.6dB. © 2010 Optical Society of America.


De Dobbelaere P.,Luxtera Inc.
Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC | Year: 2013

A Si Photonics technology platform based on a commercial SOI CMOS node has been developed for manufacturing advanced optical transceivers. Integration methodologies, design, manufacturing, performance and roadmap of silicon photonics based transceiver ICs and interconnect systems are addressed. © 2013 IEEE.


Li G.,Oracle Inc. | Yao J.,Oracle Inc. | Luo Y.,Oracle Inc. | Thacker H.,Oracle Inc. | And 7 more authors.
Optics Express | Year: 2012

We report optical waveguides up to one meter long with 0.026 dB/cm loss fabricated in a 300nm thick SOI CMOS process. Combined with tight bends and compact interlayer grating couplers, we demonstrate a complete toolbox for ultralow-loss, high-density waveguide routing for macrochip interconnects. © 2012 Optical Society of America.


Trademark
Luxtera Inc. | Date: 2013-12-20

Semiconductors which integrate photonics and electronics into a single silicon chip.


Trademark
Luxtera Inc. | Date: 2013-03-25

Semiconductors which integrate photonics and electronics into a single silicon chip.


Trademark
Luxtera Inc. | Date: 2013-03-25

Semiconductors which integrate photonics and electronics into a single silicon chip.


Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

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