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Carlsbad, CA, United States

Luxtera Inc., founded in 2001, is based in Carlsbad, California. Luxtera is a fabless semiconductor company that is using silicon photonics technology to build complex electro-optical systems in a production silicon CMOS process. It is the first company on the market with a product that monolithically incorporates active optics for data communications manufactured with low-cost silicon-based chip processing.This class of technology is widely predicted to displace large portions of the existing photonics industry that rely on discrete assemblies of electronic and photonic devices. Luxtera's partners include Freescale Semiconductor . Luxtera is a Caltech spin-out with funding from venture capital, its business partners, and DARPA. It was founded by a number of members of Prof. Axel Scherer's lab group, including Cary Gunn, Michael Hochberg, Tom Baehr-Jones, and also Axel Scherer. Other co-founders include Prof. Eli Yablonovitch and John Oxaal.In 2010, Luxtera was selected as one of MIT Technology Review's 50 Most Innovative Companies. Wikipedia.

Methods and systems for optical power monitoring of a light source assembly coupled to a silicon photonically-enabled integrated circuit (chip) are disclosed and may include, in a system comprising an optical source assembly coupled to the chip: emitting a primary beam from a front facet of a laser in the optical source assembly and a secondary beam from a back facet of the laser, directing the primary beam to an optical coupler in the chip, directing the secondary beam to a surface-illuminated photodiode in the chip, and monitoring an output power of the laser utilizing an output signal from the photodiode. The primary beam may comprise an optical source for a photonics transceiver in the chip. The focused primary beam and the secondary beam may be directed to the chip using reflectors in a lid of the optical source assembly.

Luxtera | Date: 2015-09-15

A transceiver comprising a chip, a semiconductor laser, and one or more photodetectors, the chip comprising optical and optoelectronic devices and electronics circuitry, where the transceiver is operable to: communicate, utilizing the semiconductor laser, an optical source signal into the chip via a light pipe with a sloped reflective surface, generate first optical signals in the chip based on the optical source signal, transmit the first optical signals from the chip via the light pipe, and receive second optical signals from the light pipe and converting the second optical signals to electrical signals via the photodetectors. The optical signals may be communicated out of and in to a top surface of the chip. The one or more photodetectors may be integrated in the chip. The optoelectronic devices may include the one or more photodetectors integrated in the chip. The light pipe may be a planar lightwave circuit (PLC).

Methods and systems for an optoelectronic built-in self-test (BIST) system for silicon photonics optical transceivers are disclosed and may include, in an optoelectronic transceiver having a transmit (Tx) path and a receive (Rx) path, where the Rx path includes a main Rx path and a BIST loopback path: generating a pseudo-random bit sequence (PRBS) signal, generating an optical signal in the Tx path by applying the PRBS signal to a modulator, communicating the optical signal to the BIST loopback path and converting to an electrical signal utilizing a photodetector, the photodetector being a replica of a photodetector in the main Rx path, and assessing the performance of the Tx and Rx paths by extracting a PRBS signal from the electrical signal. The transceiver may be a single complementary-metal oxide semiconductor (CMOS) die or in two CMOS die, where a first comprises electronic devices and a second comprises optical devices.

Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

Methods and systems for a multi-level encoded data path with decoder are disclosed and may include, in a receiver on a chip: receiving a multi-level encoded signal, generating a plurality of copy signals offset from the multi-level encoded signal by a configurable offset voltage, comparing each copy signal against a different threshold level, and generating binary data based on the comparison. At least one of the plurality of copy signals may be compared using a clock data recovery module and/or using a retimer, which may comprise at least one D flip-flop. The multi-level encoded signal may comprise a pulse amplitude modulated-4 (PAM-4) signal. The multi-level encoded signal may be received from a photodiode on the chip. An optical signal may be communicated to the photodiode from a grating coupler on the chip.

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