Luxtaltek Corporation

Miaoli, Taiwan

Luxtaltek Corporation

Miaoli, Taiwan
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Huang H.W.,National Chiao Tung University | Lai F.I.,Yuan Ze University | Huang J.K.,National Chiao Tung University | Lin C.H.,Luxtaltek Corporation | And 4 more authors.
Semiconductor Science and Technology | Year: 2010

GaN (gallium nitride)-based light-emitting diodes (LEDs) with a nano-scale SiO2 structure between a transparent indium-tin oxide (ITO) layer and p-GaN were fabricated. The forward voltage at 20 mA for a GaN-based LED with a SiO2 nano-scale structure was slightly higher than that of a conventional GaN-based LED because the total area of the p-type metal contact between the transparent ITO layer and p-GaN was smaller. However, the light output power for the GaN-based LED with a nano-scale structured SiO2 at 20 mA was 24% higher than that for a conventional GaN-based LED structure. This increase in the light output power is mostly attributed to the scattering of light from the SiO2 photonic quasi-crystal (PQC) layer. © 2010 IOP Publishing Ltd.


Huang J.-K.,National Chiao Tung University | Lin D.-W.,National Chiao Tung University | Shih M.-H.,National Chiao Tung University | Shih M.-H.,Academia Sinica, Taiwan | And 8 more authors.
IEEE/OSA Journal of Display Technology | Year: 2013

In this paper, we demonstrated the high performance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate (HAR-NPSS). We utilized nano-imprint lithography (NIL) and dry-etching system to fabricate a high depth HAR-NPSS. The micro-scale patterned sapphire substrate (PSS) was also used for comparison. A great enhancement of light output was observed when GaN-based LEDs were grown on a HAR-NPSS or a PSS. The light output power of LEDs with a HAR-NPSS and LEDs with a PSS were enhanced of 49 and 38% compared to LEDs with a unpatterned sapphire substrate. The high output power of the LED with a HAR-NPSS indicated that the technology of NAR-NPSS not only can improve the crystalline quality of GaN-based LEDs but also a promising development to a NPSS. © 2013 IEEE.


Lin D.-W.,National Chiao Tung University | Huang J.-K.,National Chiao Tung University | Lee C.-Y.,National Chiao Tung University | Chang R.-W.,National Chiao Tung University | And 8 more authors.
IEEE/OSA Journal of Display Technology | Year: 2013

In this study, we successfully transferred the patterns of a cone-shaped patterned sapphire substrate (CPSS) into SiO2 layer to fabricate a cone-shaped SiO2 patterned template by using nanoimprint lithography (NIL). The GaN-based light-emitting diodes (LEDs) were grown on this template by metal-organic chemical vapor deposition (MOCVD). The transmission electron microscopy (TEM) images suggest that the stacking faults formed near the cone-shaped SiO2 patterns during the epitaxial lateral overgrowth (ELOG) can effectively suppress the threading dislocations, which results in an enhancement of internal quantum efficiency. The Monte Carlo ray-tracing simulation reveals that the light extraction efficiency of the LED grown on cone-shaped SiO2 patterned template can be enhanced as compared with the LED grown on CPSS. As a result, the light output power of the LED grown on cone-shaped SiO2 patterned template outperformed the LED grown on CPSS. © 2005-2012 IEEE.


Huang H.W.,National Chiao Tung University | Huang H.W.,Luxtaltek Corporation | Lee K.Y.,Luxtaltek Corporation | Huang J.K.,National Chiao Tung University | And 4 more authors.
Journal of Nanoscience and Nanotechnology | Year: 2010

In this paper, GaN-based LEDs with a SiO 2 photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 μm) was enhanced by a factor of 1.20. After 1000 h life test (55 °C/50 mA) condition, Normalized output power of LED with a SiO 2 PQC pattern (LED III (d = 1.2 μm)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography. Copyright © 2010 American Scientific Publishers.


Chang S.-P.,National Chiao Tung University | Sou K.-P.,National Chiao Tung University | Chen C.-H.,National Chiao Tung University | Cheng Y.-J.,National Chiao Tung University | And 6 more authors.
Optics Express | Year: 2012

We report the observation of lasing action from an optically pumped gallium nitride quasicrystal nanorod arrays. The nanorods were fabricated from a GaN substrate by patterned etching, followed by epitaxial regrowth. The nanorods were arranged in a 12-fold symmetric quasicrystal pattern. The regrowth grew hexagonal crystalline facets and core-shell multiple quantum wells (MQWs) on nanorods. Under optical pumping, multiple lasing peaks resembling random lasing were observed. The lasing was identified to be from the emission of MQWs on the nanorod sidewalls. The resonant spectrum and mode field of the 12-fold symmetric photonic quasicrystal nanorod arrays is discussed. © 2012 Optical Society of America.


Huang J.-K.,National Chiao Tung University | Liu C.-Y.,National Chiao Tung University | Chen T.-P.,National Chiao Tung University | Huang H.-W.,National Chiao Tung University | And 6 more authors.
IEEE Journal on Selected Topics in Quantum Electronics | Year: 2015

High light extraction GaN-based light-emitting diodes (LEDs) with a hybrid structure of straight nanorods located in an array of microholes have been successfully demonstrated. Via the nanoimprint lithography and photolithography techniques, high aspect-ratio light-guiding InGaN/GaN nanorods can be fabricated and regularly arranged in microholes, resulting in a great improvement of the light extraction for the GaN-based LED device. The light output power of the hybrid nanorods LED is 22.04 mW at the driving current standard of 25.4 A/cm2, an enhancement of 38.7% to the conventional GaN-based LEDs. Furthermore, with a modification of the hybrid structures' dimensions and locations, the emitted optical energy can be redistributed to obtain light-emitting devices with homogenueous optical field distributions. © 1995-2012 IEEE.


Liu J.-Z.,National Tsing Hua University | Liu J.-Z.,Luxtaltek Corporation | Charlton M.D.B.,University of Southampton | Lin C.-H.,Luxtaltek Corporation | And 4 more authors.
IEEE Journal of Quantum Electronics | Year: 2014

In this paper, we investigate the efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) by incorporating a burried air void photonic crystal (BAVPC) layer within the epitaxial structure. As compared with the conventional patterned sapphire substrate (C-PSS) LEDs and flat sapphire substrate LEDs with BAVPC, the fabricated patterned sapphire substrate (PSS) LEDs with BAVPC exhibit the lowest full-width at half-maximum of (002) and (102) diffraction peaks, the highest light output power of 20.6 mW, and the highest external quantum efficiency of 37.4%. Remarkable performance improvement in the PSS LED with BAVPC is attributed to the better epitaxial quality with threading dislocations terminated by the BAVPC and the higher scattering at interface between GaN and air-void. By positioning the BAVPC directly below the multiple quantum wells (MQWs), it would cause the reduction in the number of trapped optical modes. The methodology optically isolates the MQWs from the underlying substrate and increases the optical output power. Moreover, threading dislocations are significantly suppressed using the BAVPC with high air filling fraction of ∼50. It is well proposed that this methodology provides a promising alternative to C-PSS LEDs. © 1965-2012 IEEE.


— There are different analogies to solid state crystals. One of the significant among them is the band of photons, which is a powerful theory for the understanding behavior of light in a complex photonic crystal structure. Photonic crystals are periodic structure in an optical medium, whose structure creates unusual optical dispersion properties. These are basically attractive optical materials for regulating and manipulating light flow. Browse market data tables and in-depth TOC of the Photonic Crystals Market to 2025 @ http://www.theinsightpartners.com/reports/photonic-crystals-market The report aims to provide an overview of Global Photonic Crystals Market with detailed market segmentation by application and geography. The global photonic crystals market is expected to witness high growth during the forecast period with growth in solar photovoltaic market and technological development in LED application. In 2015, Asia Pacific accounts largest phonic crystal market share and is expected to lead the market throughout the forecast period with highest CAGR. The objectives of Photonic Crystals Market Report is as follows: • To provide overview of the global photonic crystals market • To analyze and forecast the global photonic crystals market on the basis of applications • To provide market size and forecast till 2025 for overall photonic crystals market with respect to five major regions, namely; North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America (SAM), which is later sub-segmented by respective countries • To evaluate market dynamics effecting the market during the forecast period i.e., drivers, restraints, opportunities, and future trend • To provide exhaustive PEST analysis for all five regions • To profiles key photonic crystals players influencing the market along with their SWOT analysis and market strategies Some of the leading players in photonic crystals market are Corning Incorporated, Epistar, Fianium, Furukawa Electric, FLIR, Luxtaltek Corporation, NEC Corporation, Palo Alto Research Center (PARC), Sandia and Lockheed Martin Group, and Opalux. About The Insight Partners: The Insight Partners is a one stop industry research provider of actionable intelligence. We help our clients in getting solutions to their research requirements through our syndicated and consulting research services. We are a specialist in Technology, Media, and Telecommunication industries. For more information, please visit http://www.theinsightpartners.com/


Chanyawadee S.,University of Southampton | Lagoudakis P.G.,University of Southampton | Harley R.T.,University of Southampton | Charlton M.D.B.,University of Southampton | And 3 more authors.
Advanced Materials | Year: 2010

An efficient hybrid color-conversion light-emitting device consisting of colloidal nanocrystal quantum dots (NQDs) and a surface-patterned GaN-based LED is demonstrated (see figure). Excitation in a surface-patterned LED is efficiently transferred to NQD emitters via non-radiative energy transfer. A twofold enhancement of the NQD emission is achieved. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Patent
Luxtaltek Corporation | Date: 2014-08-06

A touch panel includes: a transparent rigid window screen having an inner surface and an outer surface that is adapted to be touched by a user; and a touch sensor module secured to the inner surface of the transparent rigid window screen for detecting at least one touch position of the users touch on the outer surface. The outer surface of the transparent rigid window screen is formed with an antireflection layer that includes a plurality of protruding pillars protruding outwardly from the outer surface and arranged to take a form of a quasicrystalline pattern having a plurality of pattern sections that are collectively ordered but not periodic.

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