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Zhang L.X.,Northwestern Polytechnical University | Zhang L.X.,Luoyang Photoelectronic Technology Development Center | Sun W.G.,Northwestern Polytechnical University | Sun W.G.,Luoyang Photoelectronic Technology Development Center | And 4 more authors.
Applied Physics A: Materials Science and Processing | Year: 2014

One of the major challenges of antimonide-based devices arises owing to the large number of surface states generated during fabrication processes. Surface passivation and subsequent capping of the surfaces are absolutely essential for any practical applicability of this material system. In this paper, we proposed a new passivation method (zinc sulfide coating after anodic fluoride) for InAs/GaSb superlattice infrared detectors. InAs/GaSb superlattice short-wavelength infrared materials were grown by molecular beam epitaxy on GaSb (100) substrates. A GaSb buffer layer, which can decrease the occurrence of defects with similar pyramidal structure, was grown for optimized superlattice growth condition. High resolution X-ray diffraction indicated that the period of the superlattice corresponding to fourth satellite peak was 39.77 Å. The atomic force microscopy images show the roughness was below 1.7 nm. The result of photoresponse spectra shows that the cutoff wavelength was 3.05 μm at 300 K. © 2014, Springer-Verlag Berlin Heidelberg. Source


Zhang L.X.,Northwestern Polytechnical University | Zhang L.X.,Luoyang Photoelectronic Technology Development Center | Sun W.G.,Northwestern Polytechnical University | Sun W.G.,Luoyang Photoelectronic Technology Development Center | And 4 more authors.
Applied Physics A: Materials Science and Processing | Year: 2014

One of the major challenges faced by antimonide-based devices is a result of the large number of surface states that are generated. Surface passivation and subsequent capping of the surfaces are essential for any practical applicability of this material system, as evidenced by the comparison of unpassivated and passivated InAs/GaSb superlattice mid-infrared photodiodes herein. The surface passivation methods include silicon dioxide (SiO2) coating after anodic sulfide, SiO2coating after anodic oxide, SiO2coating only, zinc sulfide (ZnS) coating after anodic sulfide, and ZnS coating after ammonium sulfide [(NH4)2S] chemical passivation. The leakage current as a function of bias voltage (I–V) for superlattice diodes obtained using different passivation methods has been examined at 77 K. The best performance was demonstrated by the SiO2after anodic sulfide passivation. The leakage current of the passivated diode is four orders of magnitudes less than that of the unpassivated diode. © 2014, Springer-Verlag Berlin Heidelberg. Source

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