Luoyang Optoelectronic Institute

Luoyang, China

Luoyang Optoelectronic Institute

Luoyang, China
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He J.L.,CAS Shanghai Institute of Technical Physics | Hu W.D.,CAS Shanghai Institute of Technical Physics | Ye Z.H.,CAS Shanghai Institute of Technical Physics | Lv Y.Q.,Luoyang Optoelectronic Institute | And 2 more authors.
Journal of Electronic Materials | Year: 2016

The design of a reflection-type subwavelength microstructure has been numerically investigated to concentrate incident light onto pixels for improved photoresponse of InSb infrared focal-plane arrays. Compared with traditional microlenses placed on top of the detector substrate, this reflection-type microstructure is better suited for extremely small pixel pitches. The structure is simulated using a joint numerical method combining the finite-difference time-domain method based on Maxwell’s curl equations and the finite-element method based on the Poisson and continuity equations. The results show that this advanced design could effectively improve device response without sacrificing crosstalk. The optimal structure parameters are obtained theoretically, with response increase of approximately 100%. © 2016 The Minerals, Metals & Materials Society


Guo N.,CAS Shanghai Institute of Technical Physics | Hu W.D.,CAS Shanghai Institute of Technical Physics | Chen X.S.,CAS Shanghai Institute of Technical Physics | Meng C.,Luoyang Optoelectronic Institute | And 2 more authors.
Journal of Electronic Materials | Year: 2011

In this work, three designs of spherical refractive microlenses have been investigated. The simulation results show that the response and crosstalk of photodetectors with silicon microlenses are one order of magnitude better than for photodetectors with InSb microlenses or silicon thin-film microlenses. Additionally, we determined the optimum position for the focused beam as a function of the radius of curvature of the microlenses. This optimum position is dependent only on the absorption characteristics of the InSb material. © 2011 TMS.


Guo N.,CAS Shanghai Institute of Technical Physics | Hu W.D.,CAS Shanghai Institute of Technical Physics | Chen X.S.,CAS Shanghai Institute of Technical Physics | Lei W.,University of Western Australia | And 4 more authors.
Optical and Quantum Electronics | Year: 2013

The quantum efficiency for mid-wavelength InSb infrared focal plane arrays has been numerically studied by two dimensional simulators. Effects of thickness of p-type layer on the quantum efficiency under front-side illumination have been obtained. The calculated results can be used to extract the optimal thickness of the p-type layer for different absorption and diffusion lengths. It is indicated that the optimal thickness of the p-type layer strongly depends on the absorption coefficient and the minority carrier lifetimes. The empirical formulas are also obtained to describe the correlation between the optimal thickness of the p-type layer, and the absorption and diffusion lengths. © 2012 Springer Science+Business Media New York.


Cao X.C.,Luoyang Optoelectronic Institute | Yao G.S.,Luoyang Optoelectronic Institute | Zhang L.X.,Luoyang Optoelectronic Institute | Wang L.W.,Luoyang Optoelectronic Institute | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

We have measured room temperature x-ray absorption spectroscopy (XAS) at the Mn L2,3edges on ferromagnetic Ga1-xMnxAs films prepared under different As2/Ga flux ratios. A growth condition relative energy shift (ΔE) at L2 peak was observed, the results suggest that the formation of antiferromagnetic Mn-As complex under As-rich growth conditions and the energy shift can be weakened even eliminated by post-growth low temperature (LT) annealing. The intensity of XAS spectrum was promoted after post-growth annealing, and the effect of annealing was also influenced by growth conditions. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).


Chao M.,Luoyang Optoelectronic Institute | Jing P.,Luoyang Optoelectronic Institute | Wei M.,Luoyang Optoelectronic Institute
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2011

InSb focal plane array (FPA) detectors which are important components of infrared systems have great influence on systems' reliability and development. Few researches have been focused on this field in recent years. Therefore, it is rather essential to carry out reliability test. In the paper, reliability enhancement testing has been carried out on 128x128 elements InSb FPA detectors to discuss the influence of temperature stresses and vibration stresses on structure and performance. Working boundary conditions of InSb FPA detectors were obtained. Aiming at the failure the corresponding improvements were adopted, and reliability of detector was enhanced greatly. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).


Hu W.D.,CAS Shanghai Institute of Technical Physics | Chen X.S.,CAS Shanghai Institute of Technical Physics | Meng C.,Luoyang Optoelectronic Institute | Lv Y.Q.,Luoyang Optoelectronic Institute | Lu W.,CAS Shanghai Institute of Technical Physics
10th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2010 | Year: 2010

We report on 2D numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths are extracted theoretically. An empirical formula is proposed to predict a reasonable optimal thickness of absorption layer. ©2010 IEEE.


Bai J.,CAS Shanghai Institute of Technical Physics | Hu W.,CAS Shanghai Institute of Technical Physics | Guo N.,CAS Shanghai Institute of Technical Physics | Lei W.,University of Western Australia | And 5 more authors.
Journal of Electronic Materials | Year: 2014

In this paper, diffractive microlens arrays are studied to concentrate incident light onto the effective photosensitive area of InSb infrared focal-plane arrays and thus enhance the quantum efficiency and reduce the crosstalk. Four designs of diffractive microlenses are investigated by a phase-matched Fresnel-elements approach. The quantum efficiency and crosstalk of the devices are calculated by using a two-dimensional device simulation with unit cell of 50 μm. Light propagation through the diffractive microlenses is simulated by the finite-difference time-domain method based on a rigorous vector solution of Maxwell's equations. The results show that the highest quantum efficiency of the device with a diffractive microlens array is about 51.6% and the corresponding crosstalk is 5.06%. The quantum efficiency is 2.1% higher than that of the device with a spherical refractive microlens array. © 2014 TMS.


Cheng C.,Luoyang Optoelectronic Institute | Si J.,Luoyang Optoelectronic Institute
Physica B: Condensed Matter | Year: 2011

The effects of inductively coupled plasma (ICP) etching on electrical properties of Pt/AuAl 0.45Ga 0.55N Schottky contacts are investigated. There are two linear parts in the ln IV curves of ICP-etched Schottky contacts at small forward currents at 198298 K. Thermionic field emission (TFE) theory analysis shows that Schottky contact with ICP etching has much lower barrier height and higher tunnel transmission probability than that without ICP etching, which could be attributed to plasma damage introduced on the ICP-etched surface. The down linear part is probably connected to surface tunneling component originated from plasma-etched surface which joins Schottky area to Ohmic area. © 2011 Elsevier B.V.


Guo N.,CAS Shanghai Institute of Technical Physics | Hu W.-D.,CAS Shanghai Institute of Technical Physics | Chen X.-S.,CAS Shanghai Institute of Technical Physics | Lv Y.-Q.,Luoyang Optoelectronic Institute | And 3 more authors.
Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD | Year: 2012

The quantum efficiency (QE) for mid-wavelength InSb infrared focal plane arrays has been numerically studied. Effects of the absorption length and thickness of p-region on device QE have been investigated. Our work shows that the optimum thickness of p-region is largely dependent on the absorption characteristics of the InSb. © 2012 IEEE.


Hu W.D.,CAS Shanghai Institute of Technical Physics | Chen X.S.,CAS Shanghai Institute of Technical Physics | Ye Z.H.,CAS Shanghai Institute of Technical Physics | Meng C.,Luoyang Optoelectronic Institute | And 2 more authors.
Optical and Quantum Electronics | Year: 2011

We report on two dimensional numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths is extracted theoretically. Our work shows that the optimal thicknesses of absorption layers strongly depend on the minority carrier lifetimes. An empirical formula is proposed to predict reasonable optimal thicknesses of absorption layer by numerically analyzing its correlations with the diffusion lengths. It is also found that the positive interface fixed charge can reduce the spectral photoresponse due to the charge-induced p-n junction. © 2011 Springer Science+Business Media, LLC.

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