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He J.L.,CAS Shanghai Institute of Technical Physics | Hu W.D.,CAS Shanghai Institute of Technical Physics | Ye Z.H.,CAS Shanghai Institute of Technical Physics | Lv Y.Q.,Luoyang Optoelectronic Institute | And 2 more authors.
Journal of Electronic Materials | Year: 2016

The design of a reflection-type subwavelength microstructure has been numerically investigated to concentrate incident light onto pixels for improved photoresponse of InSb infrared focal-plane arrays. Compared with traditional microlenses placed on top of the detector substrate, this reflection-type microstructure is better suited for extremely small pixel pitches. The structure is simulated using a joint numerical method combining the finite-difference time-domain method based on Maxwell’s curl equations and the finite-element method based on the Poisson and continuity equations. The results show that this advanced design could effectively improve device response without sacrificing crosstalk. The optimal structure parameters are obtained theoretically, with response increase of approximately 100%. © 2016 The Minerals, Metals & Materials Society Source


Cheng C.,Luoyang Optoelectronic Institute | Si J.,Luoyang Optoelectronic Institute
Physica B: Condensed Matter | Year: 2011

The effects of inductively coupled plasma (ICP) etching on electrical properties of Pt/AuAl 0.45Ga 0.55N Schottky contacts are investigated. There are two linear parts in the ln IV curves of ICP-etched Schottky contacts at small forward currents at 198298 K. Thermionic field emission (TFE) theory analysis shows that Schottky contact with ICP etching has much lower barrier height and higher tunnel transmission probability than that without ICP etching, which could be attributed to plasma damage introduced on the ICP-etched surface. The down linear part is probably connected to surface tunneling component originated from plasma-etched surface which joins Schottky area to Ohmic area. © 2011 Elsevier B.V. Source


Guo N.,CAS Shanghai Institute of Technical Physics | Hu W.D.,CAS Shanghai Institute of Technical Physics | Chen X.S.,CAS Shanghai Institute of Technical Physics | Meng C.,Luoyang Optoelectronic Institute | And 2 more authors.
Journal of Electronic Materials | Year: 2011

In this work, three designs of spherical refractive microlenses have been investigated. The simulation results show that the response and crosstalk of photodetectors with silicon microlenses are one order of magnitude better than for photodetectors with InSb microlenses or silicon thin-film microlenses. Additionally, we determined the optimum position for the focused beam as a function of the radius of curvature of the microlenses. This optimum position is dependent only on the absorption characteristics of the InSb material. © 2011 TMS. Source


Hu W.D.,CAS Shanghai Institute of Technical Physics | Chen X.S.,CAS Shanghai Institute of Technical Physics | Ye Z.H.,CAS Shanghai Institute of Technical Physics | Meng C.,Luoyang Optoelectronic Institute | And 2 more authors.
Optical and Quantum Electronics | Year: 2011

We report on two dimensional numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths is extracted theoretically. Our work shows that the optimal thicknesses of absorption layers strongly depend on the minority carrier lifetimes. An empirical formula is proposed to predict reasonable optimal thicknesses of absorption layer by numerically analyzing its correlations with the diffusion lengths. It is also found that the positive interface fixed charge can reduce the spectral photoresponse due to the charge-induced p-n junction. © 2011 Springer Science+Business Media, LLC. Source


Guo N.,CAS Shanghai Institute of Technical Physics | Hu W.D.,CAS Shanghai Institute of Technical Physics | Chen X.S.,CAS Shanghai Institute of Technical Physics | Lei W.,University of Western Australia | And 4 more authors.
Optical and Quantum Electronics | Year: 2013

The quantum efficiency for mid-wavelength InSb infrared focal plane arrays has been numerically studied by two dimensional simulators. Effects of thickness of p-type layer on the quantum efficiency under front-side illumination have been obtained. The calculated results can be used to extract the optimal thickness of the p-type layer for different absorption and diffusion lengths. It is indicated that the optimal thickness of the p-type layer strongly depends on the absorption coefficient and the minority carrier lifetimes. The empirical formulas are also obtained to describe the correlation between the optimal thickness of the p-type layer, and the absorption and diffusion lengths. © 2012 Springer Science+Business Media New York. Source

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