Luoyang Optoelectron Technology Development Center

Taikang, China

Luoyang Optoelectron Technology Development Center

Taikang, China
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Sun W.,Luoyang Optoelectron Technology Development Center | Fan H.,Luoyang Optoelectron Technology Development Center | Peng Z.,Luoyang Optoelectron Technology Development Center | Zhang L.,Luoyang Optoelectron Technology Development Center | And 8 more authors.
Infrared Physics and Technology | Year: 2014

Photodiodes of InSb were fabricated on an epitaxial layer grown using molecular beam epitaxy (MBE). Thermal cleaning of the InSb (0 0 1) substrate surface, 2 towards the (1 1 1) B plane, was performed to remove the oxide. Photodiode properties of M.©2013 Elsevier B.V. All rights reserved.

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